DE60307214D1 - Verfahren zur Herstellung eines resistiven 1T1R Speicherzellenfeldes - Google Patents
Verfahren zur Herstellung eines resistiven 1T1R SpeicherzellenfeldesInfo
- Publication number
- DE60307214D1 DE60307214D1 DE60307214T DE60307214T DE60307214D1 DE 60307214 D1 DE60307214 D1 DE 60307214D1 DE 60307214 T DE60307214 T DE 60307214T DE 60307214 T DE60307214 T DE 60307214T DE 60307214 D1 DE60307214 D1 DE 60307214D1
- Authority
- DE
- Germany
- Prior art keywords
- resistive
- producing
- memory cell
- cell array
- array
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0007—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising metal oxide memory material, e.g. perovskites
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/82—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays the switching components having a common active material layer
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/30—Resistive cell, memory material aspects
- G11C2213/31—Material having complex metal oxide, e.g. perovskite structure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Superconductor Devices And Manufacturing Methods Thereof (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/256,362 US6583003B1 (en) | 2002-09-26 | 2002-09-26 | Method of fabricating 1T1R resistive memory array |
US256362 | 2002-09-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60307214D1 true DE60307214D1 (de) | 2006-09-14 |
DE60307214T2 DE60307214T2 (de) | 2007-06-21 |
Family
ID=22971969
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60307214T Expired - Lifetime DE60307214T2 (de) | 2002-09-26 | 2003-06-25 | Verfahren zur Herstellung eines resistiven 1T1R Speicherzellenfeldes |
Country Status (7)
Country | Link |
---|---|
US (2) | US6583003B1 (de) |
EP (1) | EP1431982B1 (de) |
JP (1) | JP2004119958A (de) |
KR (1) | KR100515182B1 (de) |
CN (1) | CN1288744C (de) |
DE (1) | DE60307214T2 (de) |
TW (1) | TWI244701B (de) |
Families Citing this family (58)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7319057B2 (en) * | 2001-10-30 | 2008-01-15 | Ovonyx, Inc. | Phase change material memory device |
US6746910B2 (en) * | 2002-09-30 | 2004-06-08 | Sharp Laboratories Of America, Inc. | Method of fabricating self-aligned cross-point memory array |
KR100773537B1 (ko) * | 2003-06-03 | 2007-11-07 | 삼성전자주식회사 | 한 개의 스위칭 소자와 한 개의 저항체를 포함하는비휘발성 메모리 장치 및 그 제조 방법 |
CN1317765C (zh) * | 2003-08-06 | 2007-05-23 | 华邦电子股份有限公司 | 电阻型随机存取存储器的结构及其制造方法 |
US6962648B2 (en) * | 2003-09-15 | 2005-11-08 | Global Silicon Net Corp. | Back-biased face target sputtering |
JPWO2005041303A1 (ja) * | 2003-10-23 | 2007-04-26 | 松下電器産業株式会社 | 抵抗変化素子、その製造方法、その素子を含むメモリ、およびそのメモリの駆動方法 |
US7009278B2 (en) * | 2003-11-24 | 2006-03-07 | Sharp Laboratories Of America, Inc. | 3d rram |
US6849891B1 (en) * | 2003-12-08 | 2005-02-01 | Sharp Laboratories Of America, Inc. | RRAM memory cell electrodes |
JP4499740B2 (ja) * | 2003-12-26 | 2010-07-07 | パナソニック株式会社 | 記憶素子、メモリ回路、半導体集積回路 |
JP2005203389A (ja) * | 2004-01-13 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置の製造方法 |
JP2005203463A (ja) * | 2004-01-14 | 2005-07-28 | Sharp Corp | 不揮発性半導体記憶装置 |
US20050212022A1 (en) * | 2004-03-24 | 2005-09-29 | Greer Edward C | Memory cell having an electric field programmable storage element, and method of operating same |
WO2005106955A1 (ja) * | 2004-04-27 | 2005-11-10 | Matsushita Electric Industrial Co., Ltd. | 記憶素子 |
US7298640B2 (en) * | 2004-05-03 | 2007-11-20 | Symetrix Corporation | 1T1R resistive memory array with chained structure |
JP4830275B2 (ja) * | 2004-07-22 | 2011-12-07 | ソニー株式会社 | 記憶素子 |
KR100593448B1 (ko) * | 2004-09-10 | 2006-06-28 | 삼성전자주식회사 | 전이금속 산화막을 데이터 저장 물질막으로 채택하는비휘발성 기억 셀들 및 그 제조방법들 |
US7339813B2 (en) * | 2004-09-30 | 2008-03-04 | Sharp Laboratories Of America, Inc. | Complementary output resistive memory cell |
US20060081466A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | High uniformity 1-D multiple magnet magnetron source |
US7425504B2 (en) * | 2004-10-15 | 2008-09-16 | 4D-S Pty Ltd. | Systems and methods for plasma etching |
US20060081467A1 (en) * | 2004-10-15 | 2006-04-20 | Makoto Nagashima | Systems and methods for magnetron deposition |
JP2006120702A (ja) * | 2004-10-19 | 2006-05-11 | Matsushita Electric Ind Co Ltd | 可変抵抗素子および半導体装置 |
JP4880894B2 (ja) * | 2004-11-17 | 2012-02-22 | シャープ株式会社 | 半導体記憶装置の構造及びその製造方法 |
KR100682926B1 (ko) * | 2005-01-31 | 2007-02-15 | 삼성전자주식회사 | 저항체를 이용한 비휘발성 메모리 소자 및 그 제조방법 |
JP2006269688A (ja) * | 2005-03-23 | 2006-10-05 | National Institute Of Advanced Industrial & Technology | 不揮発性メモリ素子 |
US20130082232A1 (en) | 2011-09-30 | 2013-04-04 | Unity Semiconductor Corporation | Multi Layered Conductive Metal Oxide Structures And Methods For Facilitating Enhanced Performance Characteristics Of Two Terminal Memory Cells |
KR100657958B1 (ko) * | 2005-04-13 | 2006-12-14 | 삼성전자주식회사 | 직렬 연결 구조의 저항 노드들을 갖는 메모리 소자 |
US7256415B2 (en) | 2005-05-31 | 2007-08-14 | International Business Machines Corporation | Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cells |
US20070009821A1 (en) * | 2005-07-08 | 2007-01-11 | Charlotte Cutler | Devices containing multi-bit data |
US7362604B2 (en) * | 2005-07-11 | 2008-04-22 | Sandisk 3D Llc | Apparatus and method for programming an array of nonvolatile memory cells including switchable resistor memory elements |
US7345907B2 (en) * | 2005-07-11 | 2008-03-18 | Sandisk 3D Llc | Apparatus and method for reading an array of nonvolatile memory cells including switchable resistor memory elements |
US20070084716A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile data storage |
US20070084717A1 (en) * | 2005-10-16 | 2007-04-19 | Makoto Nagashima | Back-biased face target sputtering based high density non-volatile caching data storage |
US7463507B2 (en) * | 2005-11-09 | 2008-12-09 | Ulrike Gruening-Von Schwerin | Memory device with a plurality of memory cells, in particular PCM memory cells, and method for operating such a memory cell device |
DE102005053496B4 (de) * | 2005-11-09 | 2008-05-08 | Qimonda Ag | Speicherbauelement mit mehreren resistiv schaltenden Speicherzellen, insbesondere PCM-Speicherzellen |
US20070205096A1 (en) * | 2006-03-06 | 2007-09-06 | Makoto Nagashima | Magnetron based wafer processing |
US8395199B2 (en) | 2006-03-25 | 2013-03-12 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US8454810B2 (en) | 2006-07-14 | 2013-06-04 | 4D-S Pty Ltd. | Dual hexagonal shaped plasma source |
US20080011603A1 (en) * | 2006-07-14 | 2008-01-17 | Makoto Nagashima | Ultra high vacuum deposition of PCMO material |
US7932548B2 (en) | 2006-07-14 | 2011-04-26 | 4D-S Pty Ltd. | Systems and methods for fabricating self-aligned memory cell |
US8279704B2 (en) * | 2006-07-31 | 2012-10-02 | Sandisk 3D Llc | Decoder circuitry providing forward and reverse modes of memory array operation and method for biasing same |
US7542338B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Method for reading a multi-level passive element memory cell array |
US7542337B2 (en) * | 2006-07-31 | 2009-06-02 | Sandisk 3D Llc | Apparatus for reading a multi-level passive element memory cell array |
US8308915B2 (en) | 2006-09-14 | 2012-11-13 | 4D-S Pty Ltd. | Systems and methods for magnetron deposition |
US20080107801A1 (en) * | 2006-11-08 | 2008-05-08 | Symetrix Corporation | Method of making a variable resistance memory |
US7639523B2 (en) * | 2006-11-08 | 2009-12-29 | Symetrix Corporation | Stabilized resistive switching memory |
US7872900B2 (en) * | 2006-11-08 | 2011-01-18 | Symetrix Corporation | Correlated electron memory |
US7778063B2 (en) * | 2006-11-08 | 2010-08-17 | Symetrix Corporation | Non-volatile resistance switching memories and methods of making same |
JP4466738B2 (ja) * | 2008-01-09 | 2010-05-26 | ソニー株式会社 | 記憶素子および記憶装置 |
US8233309B2 (en) * | 2009-10-26 | 2012-07-31 | Sandisk 3D Llc | Non-volatile memory array architecture incorporating 1T-1R near 4F2 memory cell |
JP5348108B2 (ja) * | 2010-10-18 | 2013-11-20 | ソニー株式会社 | 記憶素子 |
CN102427031A (zh) * | 2011-11-29 | 2012-04-25 | 上海华力微电子有限公司 | 一种制作多晶硅侧墙的方法 |
US8670264B1 (en) * | 2012-08-14 | 2014-03-11 | Avalanche Technology, Inc. | Multi-port magnetic random access memory (MRAM) |
TWI509788B (zh) * | 2012-09-21 | 2015-11-21 | Macronix Int Co Ltd | 電阻性記憶體陣列以及用於控制電阻性記憶體陣列之操作之方法 |
KR102114202B1 (ko) | 2013-11-25 | 2020-05-26 | 삼성전자주식회사 | 가변 저항 메모리 소자 및 그 형성 방법 |
CN104810384A (zh) * | 2014-01-29 | 2015-07-29 | 北大方正集团有限公司 | 功率半导体器件及制造方法和截止环 |
TWI549263B (zh) * | 2014-09-04 | 2016-09-11 | 國立交通大學 | 記憶體結構及其製備方法 |
US9722179B2 (en) | 2014-12-09 | 2017-08-01 | Symetrix Memory, Llc | Transition metal oxide resistive switching device with doped buffer region |
WO2018063209A1 (en) * | 2016-09-29 | 2018-04-05 | Intel Corporation | Resistive random access memory cell |
Family Cites Families (16)
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US3838405A (en) | 1973-10-03 | 1974-09-24 | Ibm | Non-volatile diode cross point memory array |
JP4064496B2 (ja) * | 1996-07-12 | 2008-03-19 | 株式会社東芝 | 半導体装置及びその製造方法 |
US5847442A (en) * | 1996-11-12 | 1998-12-08 | Lucent Technologies Inc. | Structure for read-only-memory |
JP3701469B2 (ja) * | 1998-06-12 | 2005-09-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
US6204139B1 (en) | 1998-08-25 | 2001-03-20 | University Of Houston | Method for switching the properties of perovskite materials used in thin film resistors |
US6444548B2 (en) * | 1999-02-25 | 2002-09-03 | International Business Machines Corporation | Bitline diffusion with halo for improved array threshold voltage control |
WO2000057498A1 (en) * | 1999-03-25 | 2000-09-28 | Energy Conversion Devices, Inc. | Electrically programmable memory element with improved contacts |
JP2001044138A (ja) * | 1999-07-28 | 2001-02-16 | Hitachi Ltd | 半導体集積回路装置の製造方法および半導体集積回路装置 |
US6314014B1 (en) * | 1999-12-16 | 2001-11-06 | Ovonyx, Inc. | Programmable resistance memory arrays with reference cells |
US6638843B1 (en) * | 2000-03-23 | 2003-10-28 | Micron Technology, Inc. | Method for forming a silicide gate stack for use in a self-aligned contact etch |
JP2002076301A (ja) * | 2000-08-25 | 2002-03-15 | Hitachi Ltd | 半導体集積回路装置の製造方法 |
JP2002176150A (ja) * | 2000-09-27 | 2002-06-21 | Canon Inc | 磁気抵抗効果を用いた不揮発固体メモリ素子およびメモリとその記録再生方法 |
US6339544B1 (en) * | 2000-09-29 | 2002-01-15 | Intel Corporation | Method to enhance performance of thermal resistor device |
JP2002140889A (ja) * | 2000-11-01 | 2002-05-17 | Canon Inc | 強磁性体メモリおよびその情報再生方法 |
JP2002208682A (ja) * | 2001-01-12 | 2002-07-26 | Hitachi Ltd | 磁気半導体記憶装置及びその製造方法 |
US6473332B1 (en) | 2001-04-04 | 2002-10-29 | The University Of Houston System | Electrically variable multi-state resistance computing |
-
2002
- 2002-09-26 US US10/256,362 patent/US6583003B1/en not_active Expired - Lifetime
-
2003
- 2003-06-03 US US10/453,156 patent/US6841833B2/en not_active Expired - Lifetime
- 2003-06-11 JP JP2003167121A patent/JP2004119958A/ja active Pending
- 2003-06-25 TW TW092117261A patent/TWI244701B/zh not_active IP Right Cessation
- 2003-06-25 DE DE60307214T patent/DE60307214T2/de not_active Expired - Lifetime
- 2003-06-25 EP EP03254031A patent/EP1431982B1/de not_active Expired - Lifetime
- 2003-07-11 KR KR10-2003-0047292A patent/KR100515182B1/ko active IP Right Grant
- 2003-07-24 CN CNB031331254A patent/CN1288744C/zh not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
TWI244701B (en) | 2005-12-01 |
JP2004119958A (ja) | 2004-04-15 |
US6583003B1 (en) | 2003-06-24 |
CN1288744C (zh) | 2006-12-06 |
KR20040027297A (ko) | 2004-04-01 |
TW200405476A (en) | 2004-04-01 |
CN1485901A (zh) | 2004-03-31 |
US20040061180A1 (en) | 2004-04-01 |
DE60307214T2 (de) | 2007-06-21 |
KR100515182B1 (ko) | 2005-09-16 |
US6841833B2 (en) | 2005-01-11 |
EP1431982B1 (de) | 2006-08-02 |
EP1431982A1 (de) | 2004-06-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |