DE60328960D1 - Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle - Google Patents
Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-SpeicherzelleInfo
- Publication number
- DE60328960D1 DE60328960D1 DE60328960T DE60328960T DE60328960D1 DE 60328960 D1 DE60328960 D1 DE 60328960D1 DE 60328960 T DE60328960 T DE 60328960T DE 60328960 T DE60328960 T DE 60328960T DE 60328960 D1 DE60328960 D1 DE 60328960D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- phase change
- change memory
- self
- making
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/101—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
- H10B63/32—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors of the bipolar type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/068—Shaping switching materials by processes specially adapted for achieving sub-lithographic dimensions, e.g. using spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
- H10N70/8413—Electrodes adapted for resistive heating
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03425235A EP1469532B1 (de) | 2003-04-16 | 2003-04-16 | Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle |
Publications (1)
Publication Number | Publication Date |
---|---|
DE60328960D1 true DE60328960D1 (de) | 2009-10-08 |
Family
ID=32893028
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60328960T Expired - Lifetime DE60328960D1 (de) | 2003-04-16 | 2003-04-16 | Selbstausrichtendes Verfahren zur Herstellung einer Phasenwechsel-Speicherzelle und dadurch hergestellte Phasenwechsel-Speicherzelle |
Country Status (3)
Country | Link |
---|---|
US (1) | US7244956B2 (de) |
EP (1) | EP1469532B1 (de) |
DE (1) | DE60328960D1 (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102004059428A1 (de) * | 2004-12-09 | 2006-06-22 | Infineon Technologies Ag | Herstellungsverfahren für eine mikroelektronische Elektrodenstruktur, insbesondere für ein PCM-Speicherelement, und entsprechende mikroelektronische Elektrodenstruktur |
US20060177977A1 (en) * | 2005-02-08 | 2006-08-10 | The Hong Kong University Of Science And Technology | Method for patterning fins and gates in a FinFET device using trimmed hard-mask capped with imaging layer |
DE102005014645B4 (de) * | 2005-03-31 | 2007-07-26 | Infineon Technologies Ag | Anschlusselektrode für Phasen-Wechsel-Material, zugehöriges Phasen-Wechsel-Speicherelement sowie zugehöriges Herstellungsverfahren |
US7488967B2 (en) * | 2005-04-06 | 2009-02-10 | International Business Machines Corporation | Structure for confining the switching current in phase memory (PCM) cells |
US7166533B2 (en) | 2005-04-08 | 2007-01-23 | Infineon Technologies, Ag | Phase change memory cell defined by a pattern shrink material process |
EP1729355B1 (de) | 2005-06-03 | 2008-11-19 | STMicroelectronics S.r.l. | Selbstjustiertes Verfahren zur Herstellung von Phasenwechselspeicherzellen |
US20060273297A1 (en) * | 2005-06-07 | 2006-12-07 | Thomas Happ | Phase change memory cell having ring contacts |
US20070045606A1 (en) * | 2005-08-30 | 2007-03-01 | Michele Magistretti | Shaping a phase change layer in a phase change memory cell |
TWI264087B (en) * | 2005-12-21 | 2006-10-11 | Ind Tech Res Inst | Phase change memory cell and fabricating method thereof |
US7606056B2 (en) * | 2005-12-22 | 2009-10-20 | Stmicroelectronics S.R.L. | Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufactured |
TWI345827B (en) * | 2007-01-10 | 2011-07-21 | Nanya Technology Corp | Phase change memory device and method of fabricating the same |
US7728405B2 (en) | 2007-03-08 | 2010-06-01 | Qimonda Ag | Carbon memory |
US7985616B1 (en) * | 2007-04-05 | 2011-07-26 | Marvell International Ltd. | Methods to form wide heater trenches and to form memory cells to engage heaters |
TWI419321B (zh) * | 2007-04-03 | 2013-12-11 | Marvell World Trade Ltd | 記憶體裝置及其製造方法 |
US9190611B2 (en) | 2007-06-28 | 2015-11-17 | Nxp B.V. | Electronic device, and method of manufacturing an electronic device |
US7687309B2 (en) * | 2007-06-28 | 2010-03-30 | International Business Machines Corporation | CMOS-process-compatible programmable via device |
US7772582B2 (en) * | 2007-07-11 | 2010-08-10 | International Business Machines Corporation | Four-terminal reconfigurable devices |
KR20090013419A (ko) * | 2007-08-01 | 2009-02-05 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
US7969770B2 (en) * | 2007-08-03 | 2011-06-28 | International Business Machines Corporation | Programmable via devices in back end of line level |
US7659534B2 (en) * | 2007-08-03 | 2010-02-09 | International Business Machines Corporation | Programmable via devices with air gap isolation |
US20090146131A1 (en) * | 2007-12-05 | 2009-06-11 | Thomas Happ | Integrated Circuit, and Method for Manufacturing an Integrated Circuit |
US8049197B2 (en) * | 2008-12-30 | 2011-11-01 | Stmicroelectronics S.R.L. | Self-aligned nano-cross-point phase change memory |
KR20110035783A (ko) * | 2009-09-30 | 2011-04-06 | 주식회사 하이닉스반도체 | 상변화 메모리 소자 제조 방법 |
KR101097440B1 (ko) * | 2009-12-16 | 2011-12-23 | 주식회사 하이닉스반도체 | 크로스 패터닝 기법을 이용한 상변화 메모리 장치의 제조방법 |
US9431604B2 (en) | 2012-12-14 | 2016-08-30 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistive random access memory (RRAM) and method of making |
KR102028086B1 (ko) | 2013-03-04 | 2019-10-04 | 삼성전자주식회사 | 메모리소자 및 이를 포함하는 장치 |
FR3096827A1 (fr) | 2019-05-28 | 2020-12-04 | Stmicroelectronics (Crolles 2) Sas | Mémoire à changement de phase |
Family Cites Families (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5817527A (en) * | 1995-11-06 | 1998-10-06 | Chiron Diagnostics Corporation | Conjugation of ligand to immobilized protein in organic solvent |
US5814527A (en) * | 1996-07-22 | 1998-09-29 | Micron Technology, Inc. | Method of making small pores defined by a disposable internal spacer for use in chalcogenide memories |
US5789277A (en) * | 1996-07-22 | 1998-08-04 | Micron Technology, Inc. | Method of making chalogenide memory device |
US5998244A (en) * | 1996-08-22 | 1999-12-07 | Micron Technology, Inc. | Memory cell incorporating a chalcogenide element and method of making same |
US5952671A (en) * | 1997-05-09 | 1999-09-14 | Micron Technology, Inc. | Small electrode for a chalcogenide switching device and method for fabricating same |
US6031287A (en) * | 1997-06-18 | 2000-02-29 | Micron Technology, Inc. | Contact structure and memory element incorporating the same |
US6969866B1 (en) * | 1997-10-01 | 2005-11-29 | Ovonyx, Inc. | Electrically programmable memory element with improved contacts |
US20030075778A1 (en) * | 1997-10-01 | 2003-04-24 | Patrick Klersy | Programmable resistance memory element and method for making same |
US6617192B1 (en) * | 1997-10-01 | 2003-09-09 | Ovonyx, Inc. | Electrically programmable memory element with multi-regioned contact |
JPH11168199A (ja) * | 1997-12-02 | 1999-06-22 | Nippon Steel Corp | 半導体記憶装置及びその製造方法 |
JP3701469B2 (ja) * | 1998-06-12 | 2005-09-28 | 株式会社ルネサステクノロジ | 半導体集積回路装置の製造方法 |
US6943365B2 (en) * | 1999-03-25 | 2005-09-13 | Ovonyx, Inc. | Electrically programmable memory element with reduced area of contact and method for making same |
US6750079B2 (en) * | 1999-03-25 | 2004-06-15 | Ovonyx, Inc. | Method for making programmable resistance memory element |
EP1171920B1 (de) * | 1999-03-25 | 2006-11-29 | OVONYX Inc. | Elektrisch programmierbares speicherelement mit verbesserten kontakten |
US6238946B1 (en) * | 1999-08-17 | 2001-05-29 | International Business Machines Corporation | Process for fabricating single crystal resonant devices that are compatible with integrated circuit processing |
US6440837B1 (en) * | 2000-07-14 | 2002-08-27 | Micron Technology, Inc. | Method of forming a contact structure in a semiconductor device |
WO2002009206A1 (en) * | 2000-07-22 | 2002-01-31 | Ovonyx, Inc. | Electrically programmable memory element |
US6313604B1 (en) * | 2000-08-01 | 2001-11-06 | Han-Liang Chen | Charging seat for a rechargeable flashlight |
US6613604B2 (en) * | 2001-08-02 | 2003-09-02 | Ovonyx, Inc. | Method for making small pore for use in programmable resistance memory element |
US6764894B2 (en) * | 2001-08-31 | 2004-07-20 | Ovonyx, Inc. | Elevated pore phase-change memory |
US6586761B2 (en) * | 2001-09-07 | 2003-07-01 | Intel Corporation | Phase change material memory device |
US6545287B2 (en) * | 2001-09-07 | 2003-04-08 | Intel Corporation | Using selective deposition to form phase-change memory cells |
EP1318552A1 (de) * | 2001-12-05 | 2003-06-11 | STMicroelectronics S.r.l. | Kleinflächige Kontaktzone, hocheffizientes Phasenwechsel-Speicherelement und dessen Verfahren zur Herstellung |
US6512241B1 (en) * | 2001-12-31 | 2003-01-28 | Intel Corporation | Phase change material memory device |
DE60226839D1 (de) * | 2002-02-20 | 2008-07-10 | St Microelectronics Srl | Phasenwechsel-Speicherzelle sowie deren Herstellungsverfahren mittels Minigräben |
EP1339103B1 (de) * | 2002-02-20 | 2007-09-12 | STMicroelectronics S.r.l. | Sublithographische Kontaktstruktur, Phasenwechsel-Speicherzelle mit optimierter Heizstruktur sowie deren Herstellungsverfahren |
DE60220015T2 (de) * | 2002-02-20 | 2008-01-10 | Stmicroelectronics S.R.L., Agrate Brianza | Kontaktstruktur, Phasenwechsel-Speicherzelle und deren Herstellungsverfahren mit Elimination von Doppelkontakten |
US6891747B2 (en) * | 2002-02-20 | 2005-05-10 | Stmicroelectronics S.R.L. | Phase change memory cell and manufacturing method thereof using minitrenches |
US6972430B2 (en) * | 2002-02-20 | 2005-12-06 | Stmicroelectronics S.R.L. | Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereof |
US6759267B2 (en) * | 2002-07-19 | 2004-07-06 | Macronix International Co., Ltd. | Method for forming a phase change memory |
US6867425B2 (en) * | 2002-12-13 | 2005-03-15 | Intel Corporation | Lateral phase change memory and method therefor |
US7323734B2 (en) * | 2003-02-25 | 2008-01-29 | Samsung Electronics Co., Ltd. | Phase changeable memory cells |
-
2003
- 2003-04-16 EP EP03425235A patent/EP1469532B1/de not_active Expired - Lifetime
- 2003-04-16 DE DE60328960T patent/DE60328960D1/de not_active Expired - Lifetime
-
2004
- 2004-04-14 US US10/824,631 patent/US7244956B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP1469532B1 (de) | 2009-08-26 |
US7244956B2 (en) | 2007-07-17 |
US20050001284A1 (en) | 2005-01-06 |
US20070057341A9 (en) | 2007-03-15 |
EP1469532A1 (de) | 2004-10-20 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: STMICROELECTRONICS S.R.L., AGRATE BRIANZA, MAI, IT Owner name: OVONYX INC., ROCHESTER HILLS, MICH., US |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: KLUNKER, SCHMITT-NILSON, HIRSCH, 80796 MUENCHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: DERZEIT KEIN VERTRETER BESTELLT |
|
8364 | No opposition during term of opposition |