DE60227557D1 - Suszeptor für das epitaxiale wachstum - Google Patents

Suszeptor für das epitaxiale wachstum

Info

Publication number
DE60227557D1
DE60227557D1 DE60227557T DE60227557T DE60227557D1 DE 60227557 D1 DE60227557 D1 DE 60227557D1 DE 60227557 T DE60227557 T DE 60227557T DE 60227557 T DE60227557 T DE 60227557T DE 60227557 D1 DE60227557 D1 DE 60227557D1
Authority
DE
Germany
Prior art keywords
susceptor
epitaxial growth
epitaxial
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60227557T
Other languages
English (en)
Inventor
Masayuki Ishibashi
Albuquerque Krueger
Takayuki Dohi
Daizo Horie
Takashi Fujikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumco Corp
Original Assignee
Sumco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Corp filed Critical Sumco Corp
Application granted granted Critical
Publication of DE60227557D1 publication Critical patent/DE60227557D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45589—Movable means, e.g. fans
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60227557T 2001-12-21 2002-12-23 Suszeptor für das epitaxiale wachstum Expired - Lifetime DE60227557D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2001389778A JP2003197532A (ja) 2001-12-21 2001-12-21 エピタキシャル成長方法及びエピタキシャル成長用サセプター
PCT/US2002/040842 WO2003060967A1 (en) 2001-12-21 2002-12-23 Susceptor for epitaxial growth and epitaxial growth method

Publications (1)

Publication Number Publication Date
DE60227557D1 true DE60227557D1 (de) 2008-08-21

Family

ID=19188295

Family Applications (2)

Application Number Title Priority Date Filing Date
DE02795973T Pending DE02795973T1 (de) 2001-12-21 2002-12-23 Suszeptor für das epitaxiale wachstum und epitaxial-wachstumsverfahren
DE60227557T Expired - Lifetime DE60227557D1 (de) 2001-12-21 2002-12-23 Suszeptor für das epitaxiale wachstum

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE02795973T Pending DE02795973T1 (de) 2001-12-21 2002-12-23 Suszeptor für das epitaxiale wachstum und epitaxial-wachstumsverfahren

Country Status (6)

Country Link
EP (2) EP1456871B1 (de)
JP (3) JP2003197532A (de)
KR (1) KR100779970B1 (de)
CN (1) CN100419958C (de)
DE (2) DE02795973T1 (de)
WO (1) WO2003060967A1 (de)

Families Citing this family (69)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3972710B2 (ja) * 2002-03-28 2007-09-05 信越半導体株式会社 サセプタ、エピタキシャルウェーハの製造装置および製造方法
JP3908112B2 (ja) * 2002-07-29 2007-04-25 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハ製造装置及びエピタキシャルウェーハ製造方法
JP2004172392A (ja) * 2002-11-20 2004-06-17 Komatsu Electronic Metals Co Ltd 半導体エピタキシャルウェーハの製造装置およびサセプタ並びにサセプタの支持装置
JP4016823B2 (ja) * 2002-12-06 2007-12-05 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法
US7582166B2 (en) * 2003-08-01 2009-09-01 Sgl Carbon, Llc Holder for supporting wafers during semiconductor manufacture
US7615116B2 (en) 2003-10-01 2009-11-10 Shin-Etsu Handotai Co., Ltd. Method for producing silicon epitaxial wafer and silicon epitaxial wafer
WO2005081283A2 (en) 2004-02-13 2005-09-01 Asm America, Inc. Substrate support system for reduced autodoping and backside deposition
CN100594261C (zh) * 2004-05-18 2010-03-17 胜高股份有限公司 气相生长装置用基座
JP2006041028A (ja) * 2004-07-23 2006-02-09 Komatsu Electronic Metals Co Ltd サセプタ、およびエピタキシャルウェーハの製造方法
JP4496052B2 (ja) * 2004-09-28 2010-07-07 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハの製造装置、およびエピタキシャルウェーハの製造方法
US7462246B2 (en) 2005-04-15 2008-12-09 Memc Electronic Materials, Inc. Modified susceptor for barrel reactor
JP2006351865A (ja) * 2005-06-16 2006-12-28 Shin Etsu Handotai Co Ltd 気相成長用サセプタ及び気相成長装置及び気相成長方法並びにエピタキシャルウエーハ
JP4695934B2 (ja) * 2005-07-08 2011-06-08 株式会社ニューフレアテクノロジー エピタキシャル成長装置
US20070089836A1 (en) * 2005-10-24 2007-04-26 Applied Materials, Inc. Semiconductor process chamber
JP5004513B2 (ja) * 2006-06-09 2012-08-22 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 気相成長装置及び気相成長方法
US8852349B2 (en) 2006-09-15 2014-10-07 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced auto-doping and backside defects
US8951351B2 (en) 2006-09-15 2015-02-10 Applied Materials, Inc. Wafer processing hardware for epitaxial deposition with reduced backside deposition and defects
JP5024382B2 (ja) * 2007-08-03 2012-09-12 信越半導体株式会社 サセプタ及びシリコンエピタキシャルウェーハの製造方法
JP5444607B2 (ja) * 2007-10-31 2014-03-19 株式会社Ｓｕｍｃｏ エピタキシャル膜形成装置用のサセプタ、エピタキシャル膜形成装置、エピタキシャルウェーハの製造方法
JP5156446B2 (ja) * 2008-03-21 2013-03-06 株式会社Ｓｕｍｃｏ 気相成長装置用サセプタ
JP5396737B2 (ja) * 2008-04-04 2014-01-22 株式会社Ｓｕｍｃｏ エピタキシャルシリコンウェーハ及びその製造方法
JP5195370B2 (ja) * 2008-12-05 2013-05-08 株式会社Ｓｕｍｃｏ エピタキシャルウェーハの製造方法
WO2011033752A1 (ja) 2009-09-17 2011-03-24 株式会社Sumco エピタキシャルウェーハの製造方法および製造装置
US9650726B2 (en) * 2010-02-26 2017-05-16 Applied Materials, Inc. Methods and apparatus for deposition processes
JP5144697B2 (ja) * 2010-03-02 2013-02-13 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 サセプタ、エピタキシャルウェーハの製造装置、およびエピタキシャルウェーハの製造方法
JP2011225949A (ja) * 2010-04-21 2011-11-10 Ibiden Co Ltd 炭素部品および炭素部品の製造方法
US9797066B2 (en) 2010-11-15 2017-10-24 Shin-Etsu Handotai Co., Ltd. Susceptor and method for manufacturing epitaxial wafer
JP5440589B2 (ja) * 2010-11-16 2014-03-12 信越半導体株式会社 気相成長装置及びエピタキシャルウェーハの製造方法
JP5477314B2 (ja) 2011-03-04 2014-04-23 信越半導体株式会社 サセプタ及びこれを用いたエピタキシャルウェーハの製造方法
KR101259006B1 (ko) 2011-03-11 2013-04-29 주식회사 엘지실트론 웨이퍼 제조장치의 서셉터
KR101721166B1 (ko) * 2011-04-04 2017-03-29 주식회사 엘지실트론 웨이퍼 제조장치의 서셉터
KR101238842B1 (ko) * 2011-08-26 2013-03-04 주식회사 엘지실트론 반도체 제조용 서셉터 및 이를 포함한 에피택셜 성장 장치
KR101339534B1 (ko) * 2012-01-13 2013-12-10 주식회사 엘지실트론 서셉터
TWI505400B (zh) 2011-08-26 2015-10-21 Lg Siltron Inc 基座
JP5849674B2 (ja) * 2011-12-12 2016-02-03 株式会社Sumco シリコンエピタキシャルウェーハの製造方法
KR101339591B1 (ko) * 2012-01-13 2013-12-10 주식회사 엘지실트론 서셉터
KR101928356B1 (ko) * 2012-02-16 2018-12-12 엘지이노텍 주식회사 반도체 제조 장치
WO2013155073A1 (en) * 2012-04-10 2013-10-17 Memc Electronic Materials, Inc. Susceptor for improved epitaxial wafer flatness and methods for fabricating a semiconductor wafer processing device
US8940094B2 (en) 2012-04-10 2015-01-27 Sunedison Semiconductor Limited Methods for fabricating a semiconductor wafer processing device
US9870919B2 (en) 2012-04-25 2018-01-16 Applied Materials, Inc. Process chamber having separate process gas and purge gas regions
JP2013012776A (ja) * 2012-09-24 2013-01-17 Tokyo Electron Ltd プラズマ処理装置および基板載置台
JP5602903B2 (ja) * 2013-03-14 2014-10-08 アプライド マテリアルズ インコーポレイテッド エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
KR101354784B1 (ko) * 2013-10-01 2014-01-23 주식회사 엘지실트론 서셉터
JP6198584B2 (ja) * 2013-11-21 2017-09-20 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
JP6309252B2 (ja) * 2013-11-21 2018-04-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ エピタキシャル成長による成膜方法、および、エピタキシャル成長装置
SG11201610307PA (en) * 2014-07-03 2017-01-27 Applied Materials Inc Carousel batch epitaxy system
US10269614B2 (en) * 2014-11-12 2019-04-23 Applied Materials, Inc. Susceptor design to reduce edge thermal peak
JP6662571B2 (ja) * 2015-02-03 2020-03-11 株式会社Sumco エピタキシャル成長装置、およびエピタキシャル成長方法
EP3275008B1 (de) * 2015-03-25 2022-02-23 Applied Materials, Inc. Kammerkomponenten für eine epitaktische wachstumsvorrichtung
TWI615917B (zh) * 2015-04-27 2018-02-21 Ｓｕｍｃｏ股份有限公司 承托器及磊晶生長裝置
JP6459801B2 (ja) * 2015-06-26 2019-01-30 株式会社Sumco エピタキシャルシリコンウェーハの製造方法
DE102016110788A1 (de) * 2016-06-13 2017-12-14 Aixtron Se Vorrichtung und Verfahren zur Herstellung von optoelektronischen Bauelementen, insbesondere von Multi-Junction-Solarzellen im Durchlaufverfahren
CN107731756B (zh) * 2016-08-12 2020-04-28 上海新昇半导体科技有限公司 一种减少自掺杂的底座及外延设备
CN107723790B (zh) * 2016-08-12 2020-07-07 上海新昇半导体科技有限公司 一种外延设备、设备制作方法及外延方法
US10446420B2 (en) 2016-08-19 2019-10-15 Applied Materials, Inc. Upper cone for epitaxy chamber
US10622243B2 (en) * 2016-10-28 2020-04-14 Lam Research Corporation Planar substrate edge contact with open volume equalization pathways and side containment
JP6330941B1 (ja) * 2017-03-07 2018-05-30 株式会社Sumco エピタキシャル成長装置およびプリヒートリングならびにそれらを用いたエピタキシャルウェーハの製造方法
CN109306467B (zh) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 气相生长装置及气相生长方法
CN109306468B (zh) * 2017-07-26 2020-10-16 上海新昇半导体科技有限公司 衬托器、气相生长装置及气相生长方法
JP6946167B2 (ja) * 2017-12-21 2021-10-06 日本特殊陶業株式会社 基板保持部材
CN110277304A (zh) * 2018-03-14 2019-09-24 胜高股份有限公司 外延晶片的制造方法及其制造装置
DE102019132933A1 (de) * 2018-12-10 2020-06-10 Showa Denko K.K. Suszeptor und vorrichtung zur chemischen gasphasenabscheidung
JP7188250B2 (ja) * 2019-04-11 2022-12-13 株式会社Sumco 気相成長装置及びこれに用いられるキャリア
CN110429050B (zh) * 2019-08-05 2022-02-08 西安奕斯伟材料科技有限公司 一种外延生长基座
CN111020693B (zh) * 2019-12-27 2021-01-29 季华实验室 一种碳化硅外延生长设备的进气装置
KR102401504B1 (ko) * 2020-01-02 2022-05-24 에스케이실트론 주식회사 리프트 핀, 이를 포함하는 웨이퍼의 가공 장치 및 웨이퍼의 제조방법
CN112853491A (zh) * 2020-12-31 2021-05-28 山西烁科晶体有限公司 一种掺杂碳化硅单晶及其制备方法
JP7211475B1 (ja) 2021-12-10 2023-01-24 株式会社Sumco 半導体ウェーハ用エピタキシャル成長装置の基準位置検出状態の判定方法、半導体ウェーハの載置位置測定方法、及び、エピタキシャル成長装置
CN115938904A (zh) * 2022-12-12 2023-04-07 上海新昇半导体科技有限公司 外延基座、外延生长设备及半导体器件的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200157A (en) * 1986-02-17 1993-04-06 Toshiba Ceramics Co., Ltd. Susceptor for vapor-growth deposition
JPS6358819A (ja) * 1986-08-29 1988-03-14 Nec Corp 半導体装置の製造装置
US5800686A (en) * 1993-04-05 1998-09-01 Applied Materials, Inc. Chemical vapor deposition chamber with substrate edge protection
JPH088198A (ja) * 1994-06-21 1996-01-12 Sumitomo Sitix Corp 気相成長装置用サセプター
JPH10144498A (ja) * 1996-11-12 1998-05-29 Kokusai Electric Co Ltd プラズマ処理装置およびプラズマ処理方法
JP3336897B2 (ja) 1997-02-07 2002-10-21 三菱住友シリコン株式会社 気相成長装置用サセプター
JP3398308B2 (ja) * 1997-09-18 2003-04-21 東京エレクトロン株式会社 真空処理装置
KR100267885B1 (ko) * 1998-05-18 2000-11-01 서성기 반도체 박막증착장치
JP2000030894A (ja) * 1998-07-07 2000-01-28 Kokusai Electric Co Ltd プラズマ処理方法および装置
JP4402763B2 (ja) * 1999-05-13 2010-01-20 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 エピタキシャルウェーハ製造装置
US6444027B1 (en) * 2000-05-08 2002-09-03 Memc Electronic Materials, Inc. Modified susceptor for use in chemical vapor deposition process
JP2003229370A (ja) * 2001-11-30 2003-08-15 Shin Etsu Handotai Co Ltd サセプタ、気相成長装置、エピタキシャルウェーハの製造方法およびエピタキシャルウェーハ
US7270708B2 (en) * 2001-11-30 2007-09-18 Shin-Etsu Handotai Co., Ltd. Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer

Also Published As

Publication number Publication date
JP4285240B2 (ja) 2009-06-24
DE02795973T1 (de) 2005-03-31
CN100419958C (zh) 2008-09-17
KR100779970B1 (ko) 2007-11-27
EP1456871B1 (de) 2008-07-09
JP2005515630A (ja) 2005-05-26
WO2003060967A1 (en) 2003-07-24
EP1456871A1 (de) 2004-09-15
CN1526158A (zh) 2004-09-01
JP2003197532A (ja) 2003-07-11
JP2008277795A (ja) 2008-11-13
EP1840243A3 (de) 2008-02-13
JP4798163B2 (ja) 2011-10-19
KR20040066093A (ko) 2004-07-23
EP1840243A2 (de) 2007-10-03
EP1456871A4 (de) 2005-12-28
EP1840243B1 (de) 2011-10-12

Similar Documents

Publication Publication Date Title
DE60227557D1 (de) Suszeptor für das epitaxiale wachstum
DE60333826D1 (de) Sanftes weiterreichen für ofdm
DE60333767D1 (de) Kablierte zwirne für schnittfeste gewebe
DE60134954D1 (de) Produktionanordnung für Halbleiter
DE60139008D1 (de) CVD-Verfahren
DK1333853T3 (da) Vækstfaktorkompleks
DE60227606D1 (de) Verstellbare Schaufel für Turbomaschinen
DE60212260D1 (de) OFDM-Empfänger
DE60232143D1 (de) Gasphasen-wachstumseinrichtung
ITMI20021124A0 (it) Sollevaspighe per mietitrebbiatrici
DE60232967D1 (de) Okulares tränen wachstumsfaktor-ähnliches protein
DE60316746D1 (de) Keramischer Suszeptor
DE60216885D1 (de) Prozessor für die Befehlszeilenschnittstelle
DE60225255D1 (de) Fadenführer für strick- oder kulierwirkmaschine
DK1311267T3 (da) Retroviral immunoterapi
ITMI20021031A1 (it) Procedimento per preparare policarbonato-polioli
DE60209794D1 (de) Phenylalkyne
NO20013354L (no) Vekstfremmende middel
DE19983407T1 (de) Epitaxiewachstumsofen
EP1646078A4 (de) Epitaxial-wachstumsprozess
DE50208568D1 (de) Silage-Schneidzange
GB0123517D0 (en) Growing system
DE60237973D1 (de) Dampfaufwachsverfahren
DE50115802D1 (de) Dafür
ZA200205222B (en) Crystal growth.

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SUMCO CORP., TOKIO/TOKYO, JP

8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HOESSLE PATENTANWAELTE PARTNERSCHAFT, 70173 STUTTG