DE602006018223D1 - Verfahren zur Herstellung von Leuchtdioden - Google Patents

Verfahren zur Herstellung von Leuchtdioden

Info

Publication number
DE602006018223D1
DE602006018223D1 DE602006018223T DE602006018223T DE602006018223D1 DE 602006018223 D1 DE602006018223 D1 DE 602006018223D1 DE 602006018223 T DE602006018223 T DE 602006018223T DE 602006018223 T DE602006018223 T DE 602006018223T DE 602006018223 D1 DE602006018223 D1 DE 602006018223D1
Authority
DE
Germany
Prior art keywords
production
light
emitting diodes
diodes
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602006018223T
Other languages
English (en)
Inventor
See Jong Leem
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
LG Innotek Co Ltd
Original Assignee
LG Electronics Inc
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc, LG Innotek Co Ltd filed Critical LG Electronics Inc
Publication of DE602006018223D1 publication Critical patent/DE602006018223D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H01L33/22—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
DE602006018223T 2005-06-16 2006-06-16 Verfahren zur Herstellung von Leuchtdioden Active DE602006018223D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020050051671A KR20060131327A (ko) 2005-06-16 2005-06-16 발광 다이오드의 제조 방법

Publications (1)

Publication Number Publication Date
DE602006018223D1 true DE602006018223D1 (de) 2010-12-30

Family

ID=37055971

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602006018223T Active DE602006018223D1 (de) 2005-06-16 2006-06-16 Verfahren zur Herstellung von Leuchtdioden

Country Status (6)

Country Link
US (2) US8709835B2 (de)
EP (2) EP1734592B1 (de)
JP (2) JP4786430B2 (de)
KR (1) KR20060131327A (de)
CN (1) CN100407464C (de)
DE (1) DE602006018223D1 (de)

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KR100654533B1 (ko) * 2005-05-24 2006-12-06 엘지전자 주식회사 광 추출용 나노 로드를 갖는 발광 소자 및 그의 제조방법
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US10153396B2 (en) 2011-10-10 2018-12-11 Sensor Electronic Technology, Inc. Patterned layer design for group III nitride layer growth
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CN103367583B (zh) * 2012-03-30 2016-08-17 清华大学 发光二极管
CN103367585B (zh) * 2012-03-30 2016-04-13 清华大学 发光二极管
CN103367584B (zh) * 2012-03-30 2017-04-05 清华大学 发光二极管及光学元件
CN102629652B (zh) * 2012-04-23 2014-03-19 厦门市三安光电科技有限公司 发光二极管及其制作方法
TWI539624B (zh) * 2012-05-28 2016-06-21 晶元光電股份有限公司 具有圖形化界面之發光元件及其製造方法
KR20140068474A (ko) * 2012-11-28 2014-06-09 서울바이오시스 주식회사 기판 분리 방법 및 이를 이용한 발광 다이오드 칩 제조 방법
TWI540768B (zh) * 2012-12-21 2016-07-01 鴻海精密工業股份有限公司 發光晶片組合及其製造方法
CN103066178B (zh) * 2012-12-29 2015-07-29 映瑞光电科技(上海)有限公司 一种倒装光子晶体led芯片及其制造方法
KR20150039518A (ko) * 2013-10-02 2015-04-10 엘지이노텍 주식회사 발광소자
KR102323686B1 (ko) * 2014-10-21 2021-11-11 서울바이오시스 주식회사 발광 소자 및 그 제조 방법
KR102307062B1 (ko) * 2014-11-10 2021-10-05 삼성전자주식회사 반도체 소자, 반도체 소자 패키지 및 조명 장치
CN105702824B (zh) * 2016-01-26 2018-07-24 河源市众拓光电科技有限公司 一种采用晶圆级Si图形衬底制作LED垂直芯片的方法
CN105514229B (zh) * 2016-01-26 2018-01-02 河源市众拓光电科技有限公司 一种晶圆级led垂直芯片的制作方法
CN108305918B (zh) 2017-01-12 2019-07-16 中国科学院苏州纳米技术与纳米仿生研究所 氮化物半导体发光器件及其制作方法
US10879420B2 (en) 2018-07-09 2020-12-29 University Of Iowa Research Foundation Cascaded superlattice LED system

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Also Published As

Publication number Publication date
KR20060131327A (ko) 2006-12-20
EP1734592A3 (de) 2009-03-18
CN1881631A (zh) 2006-12-20
EP2264795A2 (de) 2010-12-22
JP4786430B2 (ja) 2011-10-05
US8709835B2 (en) 2014-04-29
EP2264795B1 (de) 2015-04-22
JP2010245542A (ja) 2010-10-28
CN100407464C (zh) 2008-07-30
EP1734592A2 (de) 2006-12-20
US8008646B2 (en) 2011-08-30
EP2264795A3 (de) 2011-03-02
US20070267644A1 (en) 2007-11-22
EP1734592B1 (de) 2010-11-17
JP2006352129A (ja) 2006-12-28
US20060286697A1 (en) 2006-12-21

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