TWI540768B - 發光晶片組合及其製造方法 - Google Patents
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- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000000034 method Methods 0.000 title claims description 12
- 239000000758 substrate Substances 0.000 claims description 36
- 239000004065 semiconductor Substances 0.000 claims description 33
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 description 50
- 238000007747 plating Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4256—Details of housings
- G02B6/426—Details of housings mounting, engaging or coupling of the package to a board, a frame or a panel
- G02B6/4261—Packages with mounting structures to be pluggable or detachable, e.g. having latches or rails
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83385—Shape, e.g. interlocking features
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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Description
本發明涉及一種晶片組合,特別是指一種發光晶片組合及其製造方法。
發光二極體作為新興的光源,已被廣泛地應用於各種用途當中。發光二極體通常包括發光晶片、承載晶片的基座及覆蓋晶片的封裝體。當前,由於高亮度的需求,發光二極體內往往會集成多個晶片。這些晶片密集排列於基座表面,以共同組成較大的發光區域。然而,由於晶片之間排列地較為密集,如若晶片的貼片精度不佳,將容易導致各晶片出現歪斜甚至於重疊的不良現象,影響到整個發光二極體的製造過程。
因此,有必要提供一種能避免晶片出現位置不良的發光晶片組合及其製造方法。
一種發光晶片組合,包括發光晶片及支撐晶片的基座,晶片包括基板、形成於基板上的第一半導體層、第二半導體層及位於第一半導體層及第二半導體層之間的發光層,基板朝向基座的表面形成第一定位結構,基座朝向基板的表面形成第二定位結構,第一定位結構與第二定位結構配合而將晶片定位在基座上。
一種製造發光晶片組合的方法,包括步驟:提供晶片及基座,晶
片包括暫時基板及依次形成於暫時基板上的第二半導體層、發光層及第一半導體層,基座表面形成定位結構;在第一半導體層上形成基板,基板表面形成定位結構;將暫時基板移除;將基板的定位結構對準基座的定位結構,使晶片安裝於基座上。
由於通過晶片的基板上的第一定位結構與基座上的第二定位結構配合定位,因而在貼片過程中晶片不易發生歪斜或者重疊而導致位置不良的現象,從而確保晶片能夠正確地安裝於基座上,使製造過程中的良品率得到提升。
10‧‧‧發光晶片組合
20‧‧‧基座
22‧‧‧凹槽
24‧‧‧凸起
30‧‧‧晶片
31‧‧‧暫時基板
32‧‧‧基板
322‧‧‧凹槽
324‧‧‧凸起
33‧‧‧接合層
330‧‧‧區域
34‧‧‧第一半導體層
35‧‧‧光阻層
36‧‧‧發光層
37‧‧‧填充層
38‧‧‧第二半導體層
圖1示出本發明一實施例的發光晶片組合。
圖2為圖1的發光晶片組合的分解圖。
圖3示出製造圖1的發光晶片組合的方法的第一個步驟。
圖4示出製造圖1的發光晶片組合的方法的第二個步驟。
圖5示出製造圖1的發光晶片組合的方法的第三個步驟。
圖6示出製造圖1的發光晶片組合的方法的第四個步驟。
圖7示出製造圖1的發光晶片組合的方法的第五個步驟。
圖8示出製造圖1的發光晶片組合的方法的第六個步驟。
請參閱圖1,示出了本發明一實施例的發光晶片組合10。發光晶片組合10包括一基座20及安裝於基座20上的二晶片30。
請一併參閱圖2,基座20可為集成於發光二極體內的基座或直接為電路板。當基座20為發光二極體基座時,其可由諸如陶瓷等熱
導性良好且絕緣的材料製成。當基座20為電路板時,其可為金屬基電路板(即以金屬材料作為電路板的基底,然後在上面逐層覆蓋絕緣層及導電軌跡層)。因此,基座20可為安裝於其上的晶片30提供較佳的散熱效果。基座20頂面開設有多個凹槽22及形成於相鄰凹槽22間的凸起24,用於供晶片30定位。
每一晶片30包括一基板32、依次堆疊於基板32上的第一半導體層34、發光層36及第二半導體層38。本實施例中,基板32由熱導性良好的金屬材料製成,如鎳。並且,採用鎳製造基板32還使基板32與第一半導體層34之間形成歐姆接觸,利於電流在晶片30內的傳導。基板32的底面開設一凹槽322,並在凹槽322的兩側形成二凸起324。基板32的凹槽322用於收容基座20的凸起24,凸起324用於收容於基座20的凹槽22內,從而實現晶片30與基座20之間的定位。由於可通過凹槽22、322與凸起24、324的配合進行定位,因而晶片30可精準地安裝在基座20上的預定位置,避免出現歪斜甚至於重疊的現象。本實施例中,第一半導體層34為P型層,第二半導體層38為N型層,發光層36為多重量子阱層,三者均由諸如氮化鎵、氮化銦鎵或氮化鋁銦鎵等材料製成。一電極39形成於第二半導體層38的頂面,以用於將晶片30與相應的導電結構(圖未示)連接。
本發明還進一步提供一種上述發光晶片組合10的製造方法,其主要包括如下步驟:首先,提供基座20及發光晶片30。基座20即為圖1-2中所示的基座20,其頂面形成有多個凹槽22及凸起24。發光晶片30則如圖3所示,其包括一暫時基板31及依次生長於暫時基板31上的第二半
導體層38、發光層36及第一半導體層34。
然後,再在發光晶片30上形成一接合層33。接合層33由鎳等金屬材料製成,其連接第一半導體層34的頂面。接合層33可通過諸如電鍍等方式形成,其厚度小於第一半導體層34的厚度。
之後,如圖4所示在接合層33上進一步形成一光阻層35。該光阻層35僅覆蓋接合層33頂面的中間區域而使接合層33頂面的相對兩側區域330暴露在外。光阻層35可採用黃光微影技術形成,以得到預定的形狀。
再如圖5所示,在接合層33暴露出的兩側區域330上進一步通過電鍍形成一填充層37,從而增加接合層33的厚度。由於光阻層35的阻擋,鎳僅會覆蓋在接合層33暴露出的兩側區域330上。經過二次電鍍之後的填充層37的頂面與光阻層35的頂面齊平。
再如圖6所示,通過蝕刻液去除光阻層35,並通過鐳射剝離技術將暫時基板31從第二半導體層38上分離,從而形成如圖7所示的結構。此時接合層33及填充層37共同形成底面具有凹槽322及凸起324的基板32。當然,可以理解地,也可以通過先在第一半導體層34頂面電鍍一層較厚的鎳層,然後再通過鐳射的局部照射直接在鎳層上形成凸起324及凹槽322,從而形成基板32,此時就無需使用光阻層35及二次電鍍,從而節省時間並簡化制程。
之後,如圖8所示,通過蒸鍍的方式在暴露出的第二半導體層38表面上形成金屬電極39。由於基板32是採用導電的鎳製成,因而基板32本身即可充當第一半導體層34的電極,而無需為第一半導體層34額外製造電極。
最後,如圖2所示將晶片30的凹槽322及凸起324分別與基座20上的凸起24及凹槽22對齊,然後再將晶片30放置於基座20上。由於凸起24、324及凹槽22、322之間的相互定位,因此晶片30可被精準地安裝於基座20的預定位置上。
可以理解地,光阻層35的結構並不限於如圖4中所示的位於接合層33的頂面中部,其還可以為分別形成於接合層33頂面左右兩側區域330的兩個凸出部(圖未示),從而在接合層33頂面中部位置定義出一凹槽(圖未示)。由此,後續的二次電鍍過程改為增加接合層33中部區域的厚度,使最後形成的基板32上僅包括一個凸起(圖未示)。此種情況下,基座20僅需對應形成一個配合凸起的凹槽(圖未示)即可。
綜上所述,本發明符合發明專利要件,爰依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,舉凡熟悉本案技藝之人士,在爰依本發明精神所作之等效修飾或變化,皆應涵蓋於以下之申請專利範圍內。
10‧‧‧發光晶片組合
20‧‧‧基座
30‧‧‧晶片
Claims (6)
- 一種發光晶片組合的製造方法,包括步驟:提供晶片及基座,晶片包括暫時基板及依次形成於暫時基板上的第二半導體層、發光層及第一半導體層,基座表面形成定位結構;在第一半導體層上形成基板:在第一半導體層上形成接合層;在接合層上形成光阻層,光阻層部分覆蓋接合層表面而使部分接合層暴露在外;在暴露在外的接合層表面進一步形成填充層;移除光阻層,填充層與接合層共同形成基板;基板表面形成定位結構;將暫時基板從第二半導體層上移除;將基板的定位結構對準基座的定位結構,使晶片安裝於基座上。
- 如申請專利範圍第1項所述之方法,其中接合層是通過電鍍形成於第一半導體層上,填充層是通過電鍍形成於接合層上。
- 如申請專利範圍第2項所述之方法,其中接合層及填充層均採用鎳製成。
- 如申請專利範圍第1項所述之方法,其中在移除光阻層之前填充層與光阻層齊平。
- 如申請專利範圍第1項所述之方法,其中第一半導體層為P型半導體層,第二半導體層為N型半導體層。
- 如申請專利範圍第1項所述之方法,其中基座為電路板。
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US13/914,643 US9214602B2 (en) | 2012-12-21 | 2013-06-11 | Chip unit with protrusions for interlocking mechanism and method for manufacturing the same |
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TW201427111A (zh) | 2014-07-01 |
US9214602B2 (en) | 2015-12-15 |
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