DE602005024880D1 - Halbleiterlaservorrichtung - Google Patents
HalbleiterlaservorrichtungInfo
- Publication number
- DE602005024880D1 DE602005024880D1 DE602005024880T DE602005024880T DE602005024880D1 DE 602005024880 D1 DE602005024880 D1 DE 602005024880D1 DE 602005024880 T DE602005024880 T DE 602005024880T DE 602005024880 T DE602005024880 T DE 602005024880T DE 602005024880 D1 DE602005024880 D1 DE 602005024880D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- laser device
- waveguide region
- semiconductor laser
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B3/00—Measuring instruments characterised by the use of mechanical techniques
- G01B3/10—Measuring tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/16—Window-type lasers, i.e. with a region of non-absorbing material between the active region and the reflecting surface
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/02—Measuring arrangements characterised by the use of mechanical techniques for measuring length, width or thickness
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B5/00—Measuring arrangements characterised by the use of mechanical techniques
- G01B5/18—Measuring arrangements characterised by the use of mechanical techniques for measuring depth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/18—Semiconductor lasers with special structural design for influencing the near- or far-field
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
- H01S5/1017—Waveguide having a void for insertion of materials to change optical properties
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
- H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004062882 | 2004-03-05 | ||
JP2004082181 | 2004-03-22 | ||
JP2005056085A JP4830315B2 (ja) | 2004-03-05 | 2005-03-01 | 半導体レーザ素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE602005024880D1 true DE602005024880D1 (de) | 2011-01-05 |
Family
ID=34830989
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005024880T Active DE602005024880D1 (de) | 2004-03-05 | 2005-03-04 | Halbleiterlaservorrichtung |
Country Status (8)
Country | Link |
---|---|
US (1) | US7583716B2 (de) |
EP (2) | EP1575138B1 (de) |
JP (1) | JP4830315B2 (de) |
KR (1) | KR101199114B1 (de) |
CN (1) | CN100456582C (de) |
AT (1) | ATE489749T1 (de) |
DE (1) | DE602005024880D1 (de) |
TW (1) | TWI258906B (de) |
Families Citing this family (64)
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EP1164669B1 (de) * | 1999-11-30 | 2007-01-17 | Matsushita Electric Industrial Co., Ltd. | Halbleiterlaser, verfahren zu dessen herstellung und optische plattenvorrichtung |
FR2862474B1 (fr) * | 2003-11-17 | 2006-03-03 | Nortel Networks Ltd | Procede pour effectuer un controle de securite des flux de donnees echangees entre un module et un reseau de communication, et module de communication |
DE602005011881C5 (de) * | 2004-04-02 | 2016-07-28 | Nichia Corp. | Nitrid-Halbleiterlaservorrichtung |
JP4594070B2 (ja) * | 2004-04-06 | 2010-12-08 | 三菱電機株式会社 | 半導体レーザ素子及びその製造方法 |
GB2419033B (en) * | 2004-10-08 | 2009-12-09 | Agilent Technologies Inc | An integrated modulator / laser assembly and a method of producing same |
CN100454699C (zh) * | 2004-11-22 | 2009-01-21 | 松下电器产业株式会社 | 氮化合物系半导体装置及其制造方法 |
JP2006179565A (ja) * | 2004-12-21 | 2006-07-06 | Sony Corp | 半導体レーザ素子 |
US20060194400A1 (en) * | 2005-01-21 | 2006-08-31 | Cooper James A | Method for fabricating a semiconductor device |
KR100665173B1 (ko) * | 2005-04-26 | 2007-01-09 | 삼성전기주식회사 | 질화물층의 제조방법 및 이를 이용한 수직구조 질화물반도체 발광소자의 제조방법 |
US20090323746A1 (en) * | 2005-06-16 | 2009-12-31 | Susumu Ohmi | Nitride Semiconductor Laser and Method for Fabricating Same |
CN102035135B (zh) * | 2005-08-25 | 2013-02-27 | 宾奥普迪克斯股份有限公司 | 形成在单个薄片上的半导体激光器谐振腔 |
JP4963060B2 (ja) | 2005-11-30 | 2012-06-27 | シャープ株式会社 | 窒化物系半導体レーザ素子及びその製造方法 |
JP4652995B2 (ja) * | 2006-03-16 | 2011-03-16 | 古河電気工業株式会社 | 集積型半導体レーザ素子および半導体レーザモジュール |
JP5168849B2 (ja) * | 2006-08-11 | 2013-03-27 | 住友電気工業株式会社 | 面発光レーザ素子およびその製造方法、ならびに面発光レーザアレイおよびその製造方法 |
DE102006046297A1 (de) * | 2006-09-29 | 2008-04-03 | Osram Opto Semiconductors Gmbh | Halbleiterlaser |
JP5378651B2 (ja) * | 2007-01-31 | 2013-12-25 | 日本オクラロ株式会社 | 半導体レーザ素子及びその製造方法 |
JP2008227461A (ja) * | 2007-02-15 | 2008-09-25 | Mitsubishi Electric Corp | 半導体レーザの製造方法 |
KR101351031B1 (ko) * | 2007-06-13 | 2014-01-13 | 엘지전자 주식회사 | 반도체 레이저 소자 및 그 제조방법 |
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DE102007060204B4 (de) | 2007-09-28 | 2019-02-28 | Osram Opto Semiconductors Gmbh | Strahlung emittierender Halbleiterchip |
DE102008012859B4 (de) * | 2007-12-21 | 2023-10-05 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Laserlichtquelle mit einer Filterstruktur |
CN103199433A (zh) * | 2007-12-21 | 2013-07-10 | 未来之光有限责任公司 | 氮化物类半导体发光二极管、氮化物类半导体激光元件及其制造方法和氮化物类半导体层的形成方法 |
JP4888377B2 (ja) * | 2007-12-22 | 2012-02-29 | 日立電線株式会社 | 窒化物半導体自立基板 |
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JP2009283573A (ja) * | 2008-05-20 | 2009-12-03 | Rohm Co Ltd | 窒化物半導体レーザ素子 |
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JP2010186791A (ja) * | 2009-02-10 | 2010-08-26 | Mitsubishi Electric Corp | 半導体発光素子及びその製造方法 |
JP5347566B2 (ja) * | 2009-02-27 | 2013-11-20 | 日亜化学工業株式会社 | 半導体発光素子及びその製造方法 |
US8634442B1 (en) | 2009-04-13 | 2014-01-21 | Soraa Laser Diode, Inc. | Optical device structure using GaN substrates for laser applications |
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JP5332959B2 (ja) * | 2009-06-29 | 2013-11-06 | 住友電気工業株式会社 | 窒化物系半導体光素子 |
US8269931B2 (en) * | 2009-09-14 | 2012-09-18 | The Aerospace Corporation | Systems and methods for preparing films using sequential ion implantation, and films formed using same |
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JP3888080B2 (ja) * | 2001-04-24 | 2007-02-28 | 日亜化学工業株式会社 | 半導体レーザ素子 |
CA2449047C (en) | 2001-05-31 | 2012-01-31 | Nichia Corporation | Semiconductor laser element with shading layers and improved far field pattern |
JP3804485B2 (ja) * | 2001-08-02 | 2006-08-02 | ソニー株式会社 | 半導体レーザー素子の製造方法 |
US7194174B2 (en) * | 2001-10-19 | 2007-03-20 | Ignis Technologies As | Integrated photonic crystal structure and method of producing same |
CN1417908A (zh) * | 2001-11-06 | 2003-05-14 | 中国科学院半导体研究所 | 形成镓砷/铝镓砷激光二极管的非吸收窗口的方法 |
JP3925706B2 (ja) * | 2002-06-20 | 2007-06-06 | 横河電機株式会社 | 半導体レーザ及びその製造方法 |
CA2507020A1 (en) * | 2002-12-16 | 2004-07-01 | The Governing Council Of The University Of Toronto | Method of producing 3-d photonic crystal fibers |
US6826223B1 (en) * | 2003-05-28 | 2004-11-30 | The United States Of America As Represented By The Secretary Of The Navy | Surface-emitting photonic crystal distributed feedback laser systems and methods |
-
2005
- 2005-03-01 JP JP2005056085A patent/JP4830315B2/ja active Active
- 2005-03-04 TW TW094106679A patent/TWI258906B/zh active
- 2005-03-04 AT AT05004755T patent/ATE489749T1/de not_active IP Right Cessation
- 2005-03-04 CN CNB2005100529887A patent/CN100456582C/zh active Active
- 2005-03-04 DE DE602005024880T patent/DE602005024880D1/de active Active
- 2005-03-04 EP EP05004755A patent/EP1575138B1/de active Active
- 2005-03-04 EP EP10185818.1A patent/EP2276124B1/de active Active
- 2005-03-04 KR KR1020050018228A patent/KR101199114B1/ko active IP Right Grant
- 2005-03-07 US US11/072,413 patent/US7583716B2/en active Active
Also Published As
Publication number | Publication date |
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CN100456582C (zh) | 2009-01-28 |
JP2005311308A (ja) | 2005-11-04 |
JP4830315B2 (ja) | 2011-12-07 |
EP2276124B1 (de) | 2020-02-19 |
EP2276124A3 (de) | 2013-08-07 |
KR20060043422A (ko) | 2006-05-15 |
ATE489749T1 (de) | 2010-12-15 |
EP2276124A2 (de) | 2011-01-19 |
EP1575138A2 (de) | 2005-09-14 |
EP1575138B1 (de) | 2010-11-24 |
TW200537776A (en) | 2005-11-16 |
KR101199114B1 (ko) | 2012-11-09 |
EP1575138A3 (de) | 2006-05-10 |
TWI258906B (en) | 2006-07-21 |
CN1665085A (zh) | 2005-09-07 |
US20060078024A1 (en) | 2006-04-13 |
US7583716B2 (en) | 2009-09-01 |
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