JP2003198057A5 - - Google Patents

Download PDF

Info

Publication number
JP2003198057A5
JP2003198057A5 JP2001396900A JP2001396900A JP2003198057A5 JP 2003198057 A5 JP2003198057 A5 JP 2003198057A5 JP 2001396900 A JP2001396900 A JP 2001396900A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2003198057 A5 JP2003198057 A5 JP 2003198057A5
Authority
JP
Japan
Prior art keywords
waveguide
face
ridge
substrate
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001396900A
Other languages
English (en)
Japanese (ja)
Other versions
JP2003198057A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2001396900A priority Critical patent/JP2003198057A/ja
Priority claimed from JP2001396900A external-priority patent/JP2003198057A/ja
Publication of JP2003198057A publication Critical patent/JP2003198057A/ja
Publication of JP2003198057A5 publication Critical patent/JP2003198057A5/ja
Pending legal-status Critical Current

Links

JP2001396900A 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法 Pending JP2003198057A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001396900A JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001396900A JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Publications (2)

Publication Number Publication Date
JP2003198057A JP2003198057A (ja) 2003-07-11
JP2003198057A5 true JP2003198057A5 (de) 2005-08-04

Family

ID=27602846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001396900A Pending JP2003198057A (ja) 2001-12-27 2001-12-27 半導体レーザ素子及びその製造方法

Country Status (1)

Country Link
JP (1) JP2003198057A (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530255B2 (en) 2007-02-28 2013-09-10 Sony Corporation Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer
JP4305554B2 (ja) 2007-02-28 2009-07-29 ソニー株式会社 半導体レーザの製造方法
JP2009105184A (ja) 2007-10-23 2009-05-14 Sharp Corp 窒化物系半導体レーザ素子とその製造方法
US20100074290A1 (en) * 2007-11-02 2010-03-25 Masao Kawaguchi Semiconductor laser device
JP2009283512A (ja) * 2008-05-19 2009-12-03 Panasonic Corp 窒化物半導体レーザ
JP2009302138A (ja) * 2008-06-10 2009-12-24 Opnext Japan Inc 半導体レーザ素子、及び半導体レーザ素子の製造方法
JP5281842B2 (ja) * 2008-07-29 2013-09-04 パナソニック株式会社 半導体レーザ装置
JP5153524B2 (ja) * 2008-09-01 2013-02-27 シャープ株式会社 窒化物半導体発光素子およびその製造方法
JP5093033B2 (ja) 2008-09-30 2012-12-05 ソニー株式会社 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置
JP5906445B2 (ja) * 2008-12-10 2016-04-20 パナソニックＩｐマネジメント株式会社 半導体レーザ装置及びその製造方法
JP2011124253A (ja) 2009-12-08 2011-06-23 Sony Corp 半導体レーザの製造方法、半導体レーザ、光ディスク装置、半導体装置の製造方法および半導体装置

Similar Documents

Publication Publication Date Title
JP5157081B2 (ja) 半導体発光素子及び半導体発光素子の製造方法
WO2002101894A1 (fr) Element laser a semi-conducteurs
US7294201B2 (en) Method of manufacturing crystal of III-V compound of the nitride system, crystal substrate of III-V compound of the nitride system, crystal film of III-V compound of the nitride system, and method of manufacturing device
JP4938267B2 (ja) レーザダイオードの製造方法
CN101189768B (zh) 空间滤光片
JP2003198057A5 (de)
US20110281382A1 (en) Nitride-based semiconductor device and method of fabricating the same
CN109309340B (zh) 用于制造多个激光二极管的方法和激光二极管
US20070096101A1 (en) Method of manufacturing semiconductor light emitting device
US20100202480A1 (en) Semiconductor light-emitting element and method for manufacturing the same
US8873598B2 (en) Waveguide-type optical semiconductor device
JP2011124521A (ja) 半導体レーザおよびその製造方法
WO2009011184A1 (ja) 半導体レーザ及びその製造方法
KR920020797A (ko) 반도체레이저
JP2008021845A (ja) 半導体発光装置及びその製造方法
JP2007288090A (ja) 半導体レーザ素子およびその製造方法
US5949808A (en) Semiconductor laser and method for producing the same
JP2004087564A5 (de)
EP1263099A3 (de) Halbleiterlaser
EP1553667A3 (de) Optisches Bauteil und Herstellungsverfahren dafür
CN113922210B (zh) 激光二极管及其封装结构
CN111900625B (zh) 一种激光器及其制造方法
US20230187902A1 (en) Semiconductor optical device
US6387746B2 (en) Method of fabricating semiconductor laser diode
JP2008311547A (ja) 半導体レーザ素子及び製造方法