CN113922210B - 激光二极管及其封装结构 - Google Patents
激光二极管及其封装结构 Download PDFInfo
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- CN113922210B CN113922210B CN202111067114.4A CN202111067114A CN113922210B CN 113922210 B CN113922210 B CN 113922210B CN 202111067114 A CN202111067114 A CN 202111067114A CN 113922210 B CN113922210 B CN 113922210B
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- layer
- ridge waveguide
- waveguide structure
- laser diode
- semiconductor layer
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- 238000004806 packaging method and process Methods 0.000 title abstract description 5
- 239000004065 semiconductor Substances 0.000 claims abstract description 54
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 43
- 230000002093 peripheral effect Effects 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims description 39
- 238000005253 cladding Methods 0.000 claims description 28
- 230000003287 optical effect Effects 0.000 claims description 20
- 230000005496 eutectics Effects 0.000 claims description 16
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 150000004767 nitrides Chemical class 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 4
- 238000003466 welding Methods 0.000 abstract description 16
- 239000011800 void material Substances 0.000 abstract description 15
- 238000012858 packaging process Methods 0.000 abstract description 12
- 238000000034 method Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02476—Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN202111067114.4A CN113922210B (zh) | 2021-09-13 | 2021-09-13 | 激光二极管及其封装结构 |
Applications Claiming Priority (1)
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CN202111067114.4A CN113922210B (zh) | 2021-09-13 | 2021-09-13 | 激光二极管及其封装结构 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113922210A CN113922210A (zh) | 2022-01-11 |
CN113922210B true CN113922210B (zh) | 2024-01-05 |
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CN202111067114.4A Active CN113922210B (zh) | 2021-09-13 | 2021-09-13 | 激光二极管及其封装结构 |
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CN (1) | CN113922210B (zh) |
Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11202275A (ja) * | 1998-01-07 | 1999-07-30 | Oki Electric Ind Co Ltd | リッジ導波路型半導体光機能素子およびその製造方法 |
CN1622407A (zh) * | 2003-11-25 | 2005-06-01 | 夏普株式会社 | 半导体激光元件及其制造方法 |
CN1722554A (zh) * | 2004-07-15 | 2006-01-18 | 夏普株式会社 | 半导体激光器元件的制造方法 |
JP2006074069A (ja) * | 2005-11-11 | 2006-03-16 | Eudyna Devices Inc | 半導体装置の製造方法 |
CN1750337A (zh) * | 2004-08-17 | 2006-03-22 | 夏普株式会社 | 半导体激光器件及其制造方法 |
JP2007165448A (ja) * | 2005-12-12 | 2007-06-28 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JP2017220608A (ja) * | 2016-06-09 | 2017-12-14 | 三菱電機株式会社 | レーザ素子、レーザ素子の製造方法 |
CN109412020A (zh) * | 2018-11-26 | 2019-03-01 | 武汉电信器件有限公司 | 一种倒台型高速半导体激光器芯片及其制备方法 |
CN109417275A (zh) * | 2016-06-22 | 2019-03-01 | 欧司朗光电半导体有限公司 | 半导体光源 |
CN110957633A (zh) * | 2019-12-16 | 2020-04-03 | 中国科学院半导体研究所 | 具有模场扩散结构的窄脊分布式反馈激光器及其应用 |
CN210838447U (zh) * | 2019-09-29 | 2020-06-23 | 武汉云岭光电有限公司 | 一种脊波导激光器 |
CN210838448U (zh) * | 2019-09-30 | 2020-06-23 | 武汉云岭光电有限公司 | 一种磷化铟半导体激光晶圆及磷化铟半导体激光芯片 |
CN111490454A (zh) * | 2019-01-29 | 2020-08-04 | 潍坊华光光电子有限公司 | 一种具有深沟槽的脊型GaAs基激光器的P面金属制备方法 |
CN112436381A (zh) * | 2020-11-26 | 2021-03-02 | 湖北光安伦芯片有限公司 | 一种高速dfb激光器芯片及其制作方法 |
CN112688168A (zh) * | 2020-12-24 | 2021-04-20 | 厦门三安光电有限公司 | 激光二极管及其制备方法 |
-
2021
- 2021-09-13 CN CN202111067114.4A patent/CN113922210B/zh active Active
Patent Citations (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11202275A (ja) * | 1998-01-07 | 1999-07-30 | Oki Electric Ind Co Ltd | リッジ導波路型半導体光機能素子およびその製造方法 |
CN1622407A (zh) * | 2003-11-25 | 2005-06-01 | 夏普株式会社 | 半导体激光元件及其制造方法 |
CN1722554A (zh) * | 2004-07-15 | 2006-01-18 | 夏普株式会社 | 半导体激光器元件的制造方法 |
CN1750337A (zh) * | 2004-08-17 | 2006-03-22 | 夏普株式会社 | 半导体激光器件及其制造方法 |
JP2006074069A (ja) * | 2005-11-11 | 2006-03-16 | Eudyna Devices Inc | 半導体装置の製造方法 |
JP2007165448A (ja) * | 2005-12-12 | 2007-06-28 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子及びその製造方法 |
JP2017220608A (ja) * | 2016-06-09 | 2017-12-14 | 三菱電機株式会社 | レーザ素子、レーザ素子の製造方法 |
CN109417275A (zh) * | 2016-06-22 | 2019-03-01 | 欧司朗光电半导体有限公司 | 半导体光源 |
CN109412020A (zh) * | 2018-11-26 | 2019-03-01 | 武汉电信器件有限公司 | 一种倒台型高速半导体激光器芯片及其制备方法 |
CN111490454A (zh) * | 2019-01-29 | 2020-08-04 | 潍坊华光光电子有限公司 | 一种具有深沟槽的脊型GaAs基激光器的P面金属制备方法 |
CN210838447U (zh) * | 2019-09-29 | 2020-06-23 | 武汉云岭光电有限公司 | 一种脊波导激光器 |
CN210838448U (zh) * | 2019-09-30 | 2020-06-23 | 武汉云岭光电有限公司 | 一种磷化铟半导体激光晶圆及磷化铟半导体激光芯片 |
CN110957633A (zh) * | 2019-12-16 | 2020-04-03 | 中国科学院半导体研究所 | 具有模场扩散结构的窄脊分布式反馈激光器及其应用 |
CN112436381A (zh) * | 2020-11-26 | 2021-03-02 | 湖北光安伦芯片有限公司 | 一种高速dfb激光器芯片及其制作方法 |
CN112688168A (zh) * | 2020-12-24 | 2021-04-20 | 厦门三安光电有限公司 | 激光二极管及其制备方法 |
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CN113922210A (zh) | 2022-01-11 |
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CB03 | Change of inventor or designer information | ||
CB03 | Change of inventor or designer information |
Inventor after: Zhong Zhibai Inventor after: Zhang Min Inventor after: Ye Tao Inventor after: Wang Yushou Inventor after: Huang Shaohua Inventor before: Zhong Zhibai Inventor before: Zhang Min Inventor before: Ye Tao Inventor before: Wang Yushou Inventor before: Li Shuiqing Inventor before: Huang Shaohua |
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