WO2009011184A1 - 半導体レーザ及びその製造方法 - Google Patents

半導体レーザ及びその製造方法 Download PDF

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Publication number
WO2009011184A1
WO2009011184A1 PCT/JP2008/060517 JP2008060517W WO2009011184A1 WO 2009011184 A1 WO2009011184 A1 WO 2009011184A1 JP 2008060517 W JP2008060517 W JP 2008060517W WO 2009011184 A1 WO2009011184 A1 WO 2009011184A1
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
manufacturing
ridge section
same
clad layer
Prior art date
Application number
PCT/JP2008/060517
Other languages
English (en)
French (fr)
Inventor
Tomoyuki Akiyama
Mitsuru Sugawara
Original Assignee
Qd Laser Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qd Laser Inc. filed Critical Qd Laser Inc.
Priority to JP2009523572A priority Critical patent/JP5379002B2/ja
Priority to US12/667,763 priority patent/US8160116B2/en
Priority to CN2008800249445A priority patent/CN101743670B/zh
Priority to EP08765318.4A priority patent/EP2169792B1/en
Publication of WO2009011184A1 publication Critical patent/WO2009011184A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
    • H01S5/2086—Methods of obtaining the confinement using special etching techniques lateral etch control, e.g. mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Optics & Photonics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)

Abstract

　本発明は、第１導電型を有する下部クラッド層１２と、下部クラッド層１２上に設けられ、複数の量子ドットを有する活性層１４と、活性層１４上に設けられ、孤立するリッジ部３０である第２導電型を有する上部クラッド層１８であって、リッジ部３０の上面の幅をＷｔｏｐ、前記リッジ部３０の下面から５０ｎｍの高さの前記リッジ部３０の幅をＷ１としたとき、Ｗ１≦Ｗｔｏｐ＋０．４μｍ、である半導体レーザ及び半導体レーザの製造方法である。
PCT/JP2008/060517 2007-07-17 2008-06-09 半導体レーザ及びその製造方法 WO2009011184A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009523572A JP5379002B2 (ja) 2007-07-17 2008-06-09 半導体レーザ及びその製造方法
US12/667,763 US8160116B2 (en) 2007-07-17 2008-06-09 Semiconductor laser and method for manufacturing the same
CN2008800249445A CN101743670B (zh) 2007-07-17 2008-06-09 半导体激光器及其制造方法
EP08765318.4A EP2169792B1 (en) 2007-07-17 2008-06-09 Semiconductor laser and method for manufacturing the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-186352 2007-07-17
JP2007186352 2007-07-17

Publications (1)

Publication Number Publication Date
WO2009011184A1 true WO2009011184A1 (ja) 2009-01-22

Family

ID=40259525

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060517 WO2009011184A1 (ja) 2007-07-17 2008-06-09 半導体レーザ及びその製造方法

Country Status (5)

Country Link
US (1) US8160116B2 (ja)
EP (1) EP2169792B1 (ja)
JP (1) JP5379002B2 (ja)
CN (1) CN101743670B (ja)
WO (1) WO2009011184A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010106841A1 (ja) * 2009-03-17 2010-09-23 株式会社Ｑｄレーザ 半導体レーザ
WO2010134426A1 (ja) * 2009-05-19 2010-11-25 株式会社Ｑｄレーザ 半導体レーザ
CN107293557A (zh) * 2017-05-23 2017-10-24 深圳信息职业技术学院 一种制作集成多种光电器件的基材结构及其制作方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2981803B1 (fr) 2011-10-20 2016-01-08 Alcatel Lucent Structure optique integree comportant un isolateur optique
CN104701729B (zh) * 2013-12-09 2017-12-29 华为技术有限公司 硅基激光器及其制备方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154837A (ja) * 1997-07-29 1999-02-26 Fujitsu Ltd 光半導体装置及びその製造方法
JPH11346033A (ja) * 1998-03-30 1999-12-14 Sanyo Electric Co Ltd 半導体レ―ザ装置及びその製造方法
JP2003060302A (ja) * 2001-08-16 2003-02-28 Sony Corp 半導体レーザ装置およびその製造方法
JP2006148065A (ja) * 2004-11-18 2006-06-08 Samsung Electro Mech Co Ltd 半導体レーザーおよびその製造方法
JP2006286902A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2007073582A (ja) * 2005-09-05 2007-03-22 Toshiba Corp 光半導体素子の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2863677B2 (ja) * 1992-02-13 1999-03-03 三菱電機株式会社 半導体レーザ及びその製造方法
JP3468866B2 (ja) 1994-09-16 2003-11-17 富士通株式会社 ３次元量子閉じ込めを利用した半導体装置
JPH1098235A (ja) * 1996-08-01 1998-04-14 Pioneer Electron Corp 無再成長分布帰還リッジ型半導体レーザ及びその製造方法
JP2003078208A (ja) * 2001-08-31 2003-03-14 Toshiba Corp 半導体レーザ装置及びその製造方法
JP2004342719A (ja) * 2003-05-14 2004-12-02 Toshiba Corp 半導体レーザ装置及びその製造方法
JP4526252B2 (ja) * 2003-08-26 2010-08-18 富士通株式会社 光半導体装置及びその製造方法
JP2005243720A (ja) * 2004-02-24 2005-09-08 Sony Corp 半導体発光装置
JP4822244B2 (ja) * 2004-03-19 2011-11-24 富士通株式会社 自己形成型量子ドットを用いた半導体発光素子
US20070057202A1 (en) * 2005-09-12 2007-03-15 Jintian Zhu Method for making reproducible buried heterostructure semiconductor devices

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1154837A (ja) * 1997-07-29 1999-02-26 Fujitsu Ltd 光半導体装置及びその製造方法
JPH11346033A (ja) * 1998-03-30 1999-12-14 Sanyo Electric Co Ltd 半導体レ―ザ装置及びその製造方法
JP2003060302A (ja) * 2001-08-16 2003-02-28 Sony Corp 半導体レーザ装置およびその製造方法
JP2006148065A (ja) * 2004-11-18 2006-06-08 Samsung Electro Mech Co Ltd 半導体レーザーおよびその製造方法
JP2006286902A (ja) * 2005-03-31 2006-10-19 Fujitsu Ltd 半導体レーザ及びその製造方法
JP2007073582A (ja) * 2005-09-05 2007-03-22 Toshiba Corp 光半導体素子の製造方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2169792A4 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010106841A1 (ja) * 2009-03-17 2010-09-23 株式会社Ｑｄレーザ 半導体レーザ
WO2010134426A1 (ja) * 2009-05-19 2010-11-25 株式会社Ｑｄレーザ 半導体レーザ
JP2010272589A (ja) * 2009-05-19 2010-12-02 Qd Laser Inc 半導体レーザ
CN107293557A (zh) * 2017-05-23 2017-10-24 深圳信息职业技术学院 一种制作集成多种光电器件的基材结构及其制作方法

Also Published As

Publication number Publication date
CN101743670B (zh) 2012-07-18
EP2169792B1 (en) 2018-02-14
CN101743670A (zh) 2010-06-16
JP5379002B2 (ja) 2013-12-25
EP2169792A4 (en) 2014-02-12
EP2169792A1 (en) 2010-03-31
JPWO2009011184A1 (ja) 2010-09-16
US8160116B2 (en) 2012-04-17
US20100195688A1 (en) 2010-08-05

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