ATE540430T1 - Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche - Google Patents

Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche

Info

Publication number
ATE540430T1
ATE540430T1 AT06805075T AT06805075T ATE540430T1 AT E540430 T1 ATE540430 T1 AT E540430T1 AT 06805075 T AT06805075 T AT 06805075T AT 06805075 T AT06805075 T AT 06805075T AT E540430 T1 ATE540430 T1 AT E540430T1
Authority
AT
Austria
Prior art keywords
ohmic
layer
ingaain
polar
electrode
Prior art date
Application number
AT06805075T
Other languages
English (en)
Inventor
Li Wang
Fengyi Jiang
Maoxing Zhou
Wenqing Fang
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Application granted granted Critical
Publication of ATE540430T1 publication Critical patent/ATE540430T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H10H20/8162—Current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT06805075T 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche ATE540430T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100308742A CN100375303C (zh) 2005-10-27 2005-10-27 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
PCT/CN2006/002870 WO2007048345A1 (en) 2005-10-27 2006-10-26 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE

Publications (1)

Publication Number Publication Date
ATE540430T1 true ATE540430T1 (de) 2012-01-15

Family

ID=36805821

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06805075T ATE540430T1 (de) 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche

Country Status (7)

Country Link
US (2) US7919784B2 (de)
EP (1) EP1941555B1 (de)
JP (1) JP2009514197A (de)
KR (1) KR20080060222A (de)
CN (1) CN100375303C (de)
AT (1) ATE540430T1 (de)
WO (1) WO2007048345A1 (de)

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Also Published As

Publication number Publication date
EP1941555A1 (de) 2008-07-09
US20080230799A1 (en) 2008-09-25
WO2007048345A1 (en) 2007-05-03
EP1941555B1 (de) 2012-01-04
US20080230792A1 (en) 2008-09-25
EP1941555A4 (de) 2009-06-17
US7919784B2 (en) 2011-04-05
CN1794477A (zh) 2006-06-28
KR20080060222A (ko) 2008-07-01
CN100375303C (zh) 2008-03-12
US7705348B2 (en) 2010-04-27
JP2009514197A (ja) 2009-04-02

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