ATE540430T1 - Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche - Google Patents

Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche

Info

Publication number
ATE540430T1
ATE540430T1 AT06805075T AT06805075T ATE540430T1 AT E540430 T1 ATE540430 T1 AT E540430T1 AT 06805075 T AT06805075 T AT 06805075T AT 06805075 T AT06805075 T AT 06805075T AT E540430 T1 ATE540430 T1 AT E540430T1
Authority
AT
Austria
Prior art keywords
ohmic
layer
ingaain
polar
electrode
Prior art date
Application number
AT06805075T
Other languages
English (en)
Inventor
Li Wang
Fengyi Jiang
Maoxing Zhou
Wenqing Fang
Original Assignee
Lattice Power Jiangxi Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power Jiangxi Corp filed Critical Lattice Power Jiangxi Corp
Application granted granted Critical
Publication of ATE540430T1 publication Critical patent/ATE540430T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
AT06805075T 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche ATE540430T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2005100308742A CN100375303C (zh) 2005-10-27 2005-10-27 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
PCT/CN2006/002870 WO2007048345A1 (en) 2005-10-27 2006-10-26 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH ELECTRODE FOR N-POLAR InGaAlN SURFACE

Publications (1)

Publication Number Publication Date
ATE540430T1 true ATE540430T1 (de) 2012-01-15

Family

ID=36805821

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06805075T ATE540430T1 (de) 2005-10-27 2006-10-26 Lichtemittierende halbleitervorrichtung mit elektrode für eine n-polare ingaain-fläche

Country Status (7)

Country Link
US (2) US7919784B2 (de)
EP (1) EP1941555B1 (de)
JP (1) JP2009514197A (de)
KR (1) KR20080060222A (de)
CN (1) CN100375303C (de)
AT (1) ATE540430T1 (de)
WO (1) WO2007048345A1 (de)

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Also Published As

Publication number Publication date
US7705348B2 (en) 2010-04-27
US20080230792A1 (en) 2008-09-25
WO2007048345A1 (en) 2007-05-03
EP1941555A1 (de) 2008-07-09
EP1941555B1 (de) 2012-01-04
EP1941555A4 (de) 2009-06-17
CN1794477A (zh) 2006-06-28
US7919784B2 (en) 2011-04-05
US20080230799A1 (en) 2008-09-25
KR20080060222A (ko) 2008-07-01
JP2009514197A (ja) 2009-04-02
CN100375303C (zh) 2008-03-12

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