CN1794477A - 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法 - Google Patents

含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法 Download PDF

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CN1794477A
CN1794477A CNA2005100308742A CN200510030874A CN1794477A CN 1794477 A CN1794477 A CN 1794477A CN A2005100308742 A CNA2005100308742 A CN A2005100308742A CN 200510030874 A CN200510030874 A CN 200510030874A CN 1794477 A CN1794477 A CN 1794477A
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nitrogen
nickel
gold
gallium
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CN100375303C (zh
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王立
江风益
周毛兴
方文卿
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Lattice Power Jiangxi Corp
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Nanchang University
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Priority to JP2008536912A priority patent/JP2009514197A/ja
Priority to PCT/CN2006/002870 priority patent/WO2007048345A1/en
Priority to KR1020087005773A priority patent/KR20080060222A/ko
Priority to EP06805075A priority patent/EP1941555B1/en
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen
    • H—ELECTRICITY
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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape

Abstract

本发明公开了一种含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法。本发明的铟镓铝氮半导体发光元件包括：导电基板，层叠于导电基板之上的P型欧姆电极，层叠于P型欧姆电极之上的P型铟镓铝氮(InxGayAl1－x－yN，0＜＝x＜＝1，0＜＝y＜＝1)层，层叠于P型铟镓铝氮之上的铟镓铝氮发光层，层叠于铟镓铝氮发光层之上的N型铟镓铝氮层，层叠于N型铟镓铝氮层之上的N型欧姆电极，特征是：所述的N型铟镓铝氮层的外表面为氮极性面，所述的N型欧姆电极包括至少包含由金、锗、镍三种金属成分构成的金锗镍接触层。该发光元件表面为具有氮极性面的铟镓铝氮层，并且具有良好的欧姆接触特性和很低的正向工作电压。

Description

含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法
技术领域
本发明涉及半导体发光元件，尤其涉及一种含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法。
背景技术：
近年来发展的铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)材料不仅把半导体发光元件的光谱范围延伸到绿色、蓝色和紫外波段，而且具有很高的发光亮度，因此大大拓展了半导体发光器件的应用领域。现有铟镓铝氮发光器件所用的外延材料一般是用化学气相沉积法制备的。用化学气相沉积方法制备铟镓铝氮材料，无论使用蓝宝石衬底、碳化硅衬底还是硅衬底，生长表面一般都是镓极性面，最终得到的铟镓铝氮薄膜表面也是镓极性面。因此市场上现有的铟镓铝氮发光器件中的欧姆接触，无论针对N型氮化镓还是P型氮化镓，一般都是基于与镓极性面的接触。近年来，为了提高铟镓铝氮发光器件的发光亮度，发展了衬底转移技术。例如在蓝宝石衬底上沉积铟镓铝氮薄膜，然后把铟镓铝氮薄膜粘接到另外一个基板上，再把生长衬底用激光剥离法去除。或者在硅衬底上沉积铟镓铝氮薄膜，然后把铟镓铝氮薄膜粘接到另外一个基板上，再把生长衬底用化学腐蚀方法去除，这样可以通过在外延薄膜和基板之间加一个反射层而得到更高的出光效率。然而剥离生长衬底而暴露的铟镓铝氮薄膜的表面一般为氮极性面，由于氮极性面的欧姆接触特性与镓极性面不同，因此需要发展新的欧姆接触技术。例如镓极性面的N型氮化镓一般采用钛/铝欧姆电极，而氮极性面的N型氮化镓如果仍使用钛/铝欧姆电极，则可能在界面上形成载流子耗尽层而不能形成欧姆接触，使发光器件的正向工作电压升高。
发明内容：
本发明的第一个目的在于提供一种能与氮极性面的N型铟镓铝氮层具有良好的欧姆接触的欧姆电极。
本发明的第二个目的在于提供一种含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，这种发光元件表面为具有氮极性面的铟镓铝氮层，并且具有良好的欧姆接触特性和很低的正向工作电压。
本发明第三个目的在于提供一种含有金锗镍欧姆电极的铟镓铝氮半导体发光元件的制造方法，所述制造方法使用含有金锗镍的欧姆电极与氮极性面的N型铟镓铝氮层接触。
本发明的第一个目的是这样实现的：
与氮极性面铟镓铝氮层接触的欧姆电极，特征是包括至少包含由金、锗、镍三种金属成份构成的金锗镍接触层，但是成份中不包含铝。
所述金锗镍接触层中金、锗、镍三种金属的成份，优选配比为：镍成分小于5％，锗成分大于10％且小于15％，剩余成份为金。
所述欧姆电极还可以包括下述由镍层和金层构成的叠层结构。
所述欧姆电极的叠层依次为：层叠于所述具有氮极性表面的N型铟镓铝氮层之上的金锗镍接触层，曾叠于所述金锗镍接触层之上的镍层，层叠于所述镍层之上的金层。
本发明的第二个目的是这样实现的：
本发明的铟镓铝氮半导体发光元件包括：导电基板，层叠于导电基板之上的P型欧姆电极，层叠于P型欧姆电极之上的P型铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)层，层叠于P型铟镓铝氮之上的铟镓铝氮发光层，层叠于铟镓铝氮发光层之上的N型铟镓铝氮层，层叠于N型铟镓铝氮层之上的N型欧姆电极，特征是：所述的N型铟镓铝氮层的外表面为氮极性面，所述的N型欧姆电极包括至少包含由金、锗、镍三种金属成份构成的金锗镍接触层，但是成份中不包含铝。
所述金锗镍接触层优选由金、锗、镍三种金属组成，优选配比为：镍成分小于5％，含有的锗成分大于10％且小于15％，其余成分为金。
由于使用金锗镍合金与氮极性面的N型铟镓铝氮层接触，可以避免形成氮化铝界面层，不会出现载流子耗尽层。因此可以获得良好的欧姆接触。
本发明的N型欧姆电极包括金锗镍接触层，但不限于只有金锗镍接触层，在金锗镍接触层之上还可以有其它的金属层，所述的其它金属层有利于压焊。优选为镍层、金层。
在本发明的优选方案中，N型欧姆电极的叠层依次为：层叠于所述具有氮极性表面的N型铟镓铝氮层之上的金锗镍接触层，曾叠于所述金锗镍接触层之上的镍层，层叠于所述镍层之上的金层。
在所述的导电基板和P型欧姆电极之间还可以有一粘接金属层，所述粘接金属层的成份优选为金。
本发明的发光元件，基板原则上可以是任何导电材料，优选为导电、导热性好，价格便宜、稳定抗腐蚀的材料，如常见的金属或半导体材料。在本发明中导电基板优选由硅或铬形成。
本发明的发光元件，N型铟镓铝氮层和P型铟镓铝氮层可以是单层或多层，还可以具有超晶格结构或调制掺等结构。发光层可以是双异质结、单量子阱或多量子阱。
本发明的第三个目的是这样实现的：
本发明的铟镓铝氮半导体发光元件的制造方法，包括以下步骤：在外延衬底上形成N型铟镓铝氮、铟镓铝氮发光层和P型铟镓铝氮层，在P型铟镓铝氮层上形成P型欧姆电极，再在P型欧姆电极上形成导电基板，然后把所述的外延衬底去除，暴露氮极性面的N型铟镓铝氮层，在N型铟镓铝氮层上蒸发至少含有金锗镍接触层的N型欧姆电极。
附图说明：
图1是本发明第一种实施例的发光元件的剖面结构示意图。其中1为铬基板、2为P型欧姆电极、3为P型氮化镓层、4为铟镓氮/氮化镓多量子阱发光层、5为N型氮化镓层、6为金锗镍接触层、7为镍层、8为金层。
图2是本发明第二种实施例的发光元件的剖面结构示意图。其中1为硅基板、2为P型欧姆电极、3为P型氮化镓层、4为铟镓氮/铝镓氮单量子阱发光层、5为N型氮化镓层、6为金锗镍接触层、9为粘接金属层、10为背面电极。
具体实施方式：
下面对照附图用2个实施例对本发明作进一步详细说明。
实施例1：
参照图1。本实施例中铟镓铝氮半导体发光元件具有如下结构：铬基板1、层叠于铬基板1之上的P型欧姆电极2、层叠于P型欧姆电极2之上的P型氮化镓层3、层叠于P型氮化镓层3之上的铟镓氮/氮化镓多量子阱发光层4、层叠于发光层4之上的N型氮化镓层5、层叠于N型氮化镓层5之上的金锗镍接触层6、层叠于金锗镍接触层6之上的镍层7、层叠于镍层7之上的金层8。金锗镍接触层6中三种元素的成分配比具有这样的关系：镍占总重的2％，金和锗的重量比为88∶12。
该发光元件的制造方法为：使用化学气相沉积法，首先在一个硅衬底上形成氮化铝缓冲层，然后依次沉积N型氮化镓层5、铟镓氮/氮化镓多量子阱发光层4、P型氮化镓层3。沉积完成后，对外延片进行760℃热退火以激活P型杂质。在P型氮化镓层3上形成P型欧姆电极2。在P型欧姆电极2上沉积30微米厚的铬层作为支撑基板1。使用硅腐蚀液把硅衬底去除，然后用反应离子刻蚀的方法把氮化铝缓冲层局部刻除并暴露N型氮化镓层5。在N型氮化镓层5上依次蒸发1000埃的金锗镍即金锗镍接触层6、200埃的镍即镍层7、8000埃的金层8。在350摄氏度氮气中金锗镍合金3分钟以形成欧姆接触。再经过划片、封装就可以得到完整的发光器件。
实施例2：
参照图2。本实施例中铟镓铝氮半导体发光元件具有如下结构：一个硅基板1、层叠于硅基板1之上的粘接金属层9、层叠于所述粘接金属层9之上的P型欧姆电极2、层叠于所述P型欧姆电极2之上的P型氮化镓层3、层叠于所述P型氮化镓层3之上的铟镓氮/铝镓氮单量子阱发光层4、层叠于所述单量子阱发光层4之上的N型氮化镓层5、层叠于N型氮化镓层5之上的金锗镍接触层6即N型欧姆电极、层叠于所述硅基板1背面的背面电极10。N型欧姆电极中，镍含量为零，金和锗的重量比为86∶14。
该发光元件的制造方法为：使用化学气相沉积法，首先在一个硅衬底上形成氮化铝缓冲层，然后依次沉积N型氮化镓层5、铟镓氮/铝镓氮单量子阱发光层4、P型氮化镓层3。沉积完成后，对外延片进行760℃热退火以激活P型杂质。在P型层上形成P型欧姆电极2。在P型欧姆电极2上形成一粘接金属层9。在接金属层9上粘接一个硅基板1。在硅基板1背面形成一个腐蚀保护层即背面电极10。使用硅腐蚀液把硅生长衬底去除，然后用反应离子刻蚀的方法把氮化铝缓冲层局部刻除并暴露N型氮化镓层5。在N型氮化镓层5上蒸发8000埃的金锗镍接触层6并经过光刻形成电极。在300度氮气氛围下对金锗镍电极进行5分钟合金。再经过划片、封装就可以得到完整的发光器件。

Claims (10)

1、一种含有金锗镍的欧姆电极，其特征在于：包括至少包含由金、锗、镍三种金属成分构成的金锗镍接触层，但是成份中不包含铝。
2、如权利要求1所述的含有金锗镍的欧姆电极，其特征在于：所述金锗镍接触层由金、锗、镍三种金属组成，优选配比为：镍成分小于5％，锗成分大于10％且小于15％，剩余成分为金。
3、如权利要求1所述的含有金锗镍的欧姆电极，其特征在于：所述欧姆电极还包括由镍层和金层构成的叠层结构。
4、如权利要求1-3所述的含有金锗镍的欧姆电极，其特征在于：所述欧姆电极的叠层依次为：层叠于所述具有氮极性表面的N型铟镓铝氮层之上的金锗镍接触层，曾叠于所述金锗镍接触层之上的镍层，层叠于所述镍层之上的金层。
5、一种含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，包括：导电基板，层叠于导电基板之上的P型欧姆电极，层叠于P型欧姆电极之上的P型铟镓铝氮(InxGayAl1-x-yN，0＜＝x＜＝1，0＜＝y＜＝1)层，层叠于P型铟镓铝氮之上的铟镓铝氮发光层，层叠于铟镓铝氮发光层之上的N型铟镓铝氮层，层叠于N型铟镓铝氮层之上的N型欧姆电极，其特征在于：所述的N型铟镓铝氮层的外表面为氮极性面，所述的N型欧姆电极包括至少包含由金、锗、镍三种金属成分构成的金锗镍接触层，但是成份中不包含铝。
6、如权利要求5所述的含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，其特征在于：所述金锗镍接触层优选由金、锗、镍三种金属组成，优选配比为镍成分小于5％，含有的锗成分大于10％且小于15％，其余成分为金。
7、如权利要求5所述的含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，其特征在于：N型欧姆电极的叠层依次为：层叠于所述具有氮极性表面的N型铟镓铝氮层之上的金锗镍接触层，曾叠于所述金锗镍接触层之上的镍层，层叠于所述镍层之上的金层。
8、如权利要求5所述的含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，其特征在于：在所述的导电基板和P型欧姆电极之间还有一粘接金属层，所述粘接金属层的金属优选为金层。
9、如权利要求5所述的含有金锗镍欧姆电极的铟镓铝氮半导体发光元件，其特征在于：所述的导电基板由硅或铬形成。
10、一种如权利要求5所述的铟镓铝氮半导体发光元件的制造方法，包括以下步骤：在外延衬底上形成N型铟镓铝氮层、铟镓铝氮发光层和P型铟镓铝氮层，在P型铟镓铝氮层上形成P型欧姆电极，再在P型欧姆电极上沉积导电基板，然后把所述的外延衬底去除，暴露氮极性面的N型铟镓铝氮层，然后再在N型铟镓铝氮层上蒸发至少含有金锗镍接触层的N型欧姆电极。
CNB2005100308742A 2005-09-30 2005-10-27 含有金锗镍的欧姆电极、铟镓铝氮半导体发光元件及制造方法 Expired - Fee Related CN100375303C (zh)

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US12/063,978 US7919784B2 (en) 2005-09-30 2006-09-29 Semiconductor light-emitting device and method for making same
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101636820B (zh) * 2007-03-28 2011-09-07 松下电器产业株式会社 欧姆电极结构体及半导体元件
CN104393126A (zh) * 2014-11-14 2015-03-04 无锡科思电子科技有限公司 一种红色led芯片制程工艺中的n面蒸镀方法
WO2017088546A1 (zh) * 2015-11-24 2017-06-01 厦门市三安光电科技有限公司 发光二极管及其制作方法
CN110808319A (zh) * 2019-11-11 2020-02-18 中国科学院半导体研究所 反极性垂直发光二极管及其制备方法

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1710877B1 (en) * 2003-12-22 2010-12-01 Panasonic Corporation Surface-emitting laser and laser projector
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US8021904B2 (en) * 2007-02-01 2011-09-20 Cree, Inc. Ohmic contacts to nitrogen polarity GaN
TWI338387B (en) * 2007-05-28 2011-03-01 Delta Electronics Inc Current spreading layer with micro/nano structure, light-emitting diode apparatus and its manufacturing method
TWI353068B (en) * 2007-07-19 2011-11-21 Lite On Technology Corp Semiconductor light-emitting element and process f
US8044381B2 (en) * 2007-07-30 2011-10-25 Hewlett-Packard Development Company, L.P. Light emitting diode (LED)
KR100882112B1 (ko) * 2007-09-28 2009-02-06 삼성전기주식회사 반도체 발광소자 및 그의 제조방법
US9634191B2 (en) 2007-11-14 2017-04-25 Cree, Inc. Wire bond free wafer level LED
WO2009117850A1 (en) * 2008-03-26 2009-10-01 Lattice Power (Jiangxi) Corporation Method for fabricating highly reflective ohmic contact in light-emitting devices
US20090242929A1 (en) * 2008-03-31 2009-10-01 Chao-Kun Lin Light emitting diodes with patterned current blocking metal contact
US9059338B2 (en) * 2008-05-02 2015-06-16 Lg Innotek Co., Ltd. Light emitting element and a production method therefor
KR101459770B1 (ko) 2008-05-02 2014-11-12 엘지이노텍 주식회사 그룹 3족 질화물계 반도체 소자
KR100942713B1 (ko) 2008-05-07 2010-02-16 주식회사 세미콘라이트 질화물계 발광소자 및 그 제조방법
JP2010056313A (ja) * 2008-08-28 2010-03-11 Sumitomo Electric Ind Ltd 半導体装置およびその製造方法
KR101004858B1 (ko) * 2008-11-06 2010-12-28 삼성엘이디 주식회사 화합물 반도체 발광 소자 및 그 제조방법
US8188496B2 (en) 2008-11-06 2012-05-29 Samsung Led Co., Ltd. Semiconductor light emitting device including substrate having protection layers and method for manufacturing the same
KR101007113B1 (ko) * 2008-11-25 2011-01-10 엘지이노텍 주식회사 반도체 발광소자 및 그 제조방법
JP2010186829A (ja) * 2009-02-10 2010-08-26 Toshiba Corp 発光素子の製造方法
JP5350833B2 (ja) * 2009-02-20 2013-11-27 株式会社東芝 半導体発光素子、半導体発光装置及び半導体発光素子の製造方法
KR101231457B1 (ko) * 2009-03-24 2013-02-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
KR101585102B1 (ko) * 2009-04-16 2016-01-13 삼성전자 주식회사 발광 소자 및 그 제조 방법
KR100986560B1 (ko) * 2010-02-11 2010-10-07 엘지이노텍 주식회사 발광소자 및 그 제조방법
US9287452B2 (en) * 2010-08-09 2016-03-15 Micron Technology, Inc. Solid state lighting devices with dielectric insulation and methods of manufacturing
US8502244B2 (en) * 2010-08-31 2013-08-06 Micron Technology, Inc. Solid state lighting devices with current routing and associated methods of manufacturing
US10170668B2 (en) 2011-06-21 2019-01-01 Micron Technology, Inc. Solid state lighting devices with improved current spreading and light extraction and associated methods
US20130001510A1 (en) * 2011-06-29 2013-01-03 SemiLEDs Optoelectronics Co., Ltd. Optoelectronic device having current blocking insulation layer for uniform temperature distribution and method of fabrication
US9847372B2 (en) * 2011-12-01 2017-12-19 Micron Technology, Inc. Solid state transducer devices with separately controlled regions, and associated systems and methods
DE102012220050A1 (de) * 2012-11-02 2014-05-08 Osram Opto Semiconductors Gmbh Organisches optoelektronisches Bauelement und Verfahren zum Betrieb des organischen optoelektronischen Bauelements
DE102012220056A1 (de) 2012-11-02 2014-02-13 Osram Opto Semiconductors Gmbh Organisches optoelektronisches bauelement und verfahren zum betrieb des organischen optoelektronischen bauelements
DE102012220020A1 (de) 2012-11-02 2014-05-08 Osram Opto Semiconductors Gmbh Organisches optoelektronisches bauelement und verfahren zum betrieb des organischen optoelektronischen bauelements
JP6185786B2 (ja) * 2012-11-29 2017-08-23 スタンレー電気株式会社 発光素子
WO2017109768A1 (en) * 2015-12-24 2017-06-29 Vuereal Inc. Vertical solid state devices
WO2018178951A1 (en) 2017-03-30 2018-10-04 Vuereal Inc. Vertical solid-state devices
US11721784B2 (en) 2017-03-30 2023-08-08 Vuereal Inc. High efficient micro devices
US11600743B2 (en) 2017-03-30 2023-03-07 Vuereal Inc. High efficient microdevices
CN113410312B (zh) * 2021-06-11 2023-03-21 西安电子科技大学 一种氮极性面氮化镓共振隧穿二极管及其制作方法

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06151354A (ja) * 1992-10-30 1994-05-31 Sanyo Electric Co Ltd 半導体素子の電極形成方法
US5777350A (en) * 1994-12-02 1998-07-07 Nichia Chemical Industries, Ltd. Nitride semiconductor light-emitting device
JPH08222797A (ja) * 1995-01-17 1996-08-30 Hewlett Packard Co <Hp> 半導体装置およびその製造方法
JP3462720B2 (ja) * 1997-07-16 2003-11-05 三洋電機株式会社 ｎ型窒化物半導体の電極及び前記電極を有する半導体素子並びにその製造方法
JPH11135834A (ja) * 1997-10-27 1999-05-21 Matsushita Electric Ind Co Ltd 発光ダイオード装置及びその製造方法
DE69932686T2 (de) * 1998-09-25 2007-08-09 Mitsubishi Chemical Corp. Halbleiterlichtstrahler und dessen Herstellungsverfahren
JP2001085741A (ja) * 1999-09-17 2001-03-30 Toshiba Corp 半導体素子および発光半導体素子
JP2001217443A (ja) * 2000-02-04 2001-08-10 Sony Corp 半導体素子およびその製造方法、太陽電池およびその製造方法ならびに半導体素子を用いた光学素子
JP4024994B2 (ja) * 2000-06-30 2007-12-19 株式会社東芝 半導体発光素子
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP4091261B2 (ja) * 2000-10-31 2008-05-28 株式会社東芝 半導体発光素子及びその製造方法
US6686991B1 (en) * 2000-11-06 2004-02-03 Nikon Corporation Wafer stage assembly, servo control system, and method for operating the same
JP3498698B2 (ja) * 2000-11-08 2004-02-16 日亜化学工業株式会社 窒化ガリウム系化合物半導体素子
US6657237B2 (en) * 2000-12-18 2003-12-02 Samsung Electro-Mechanics Co., Ltd. GaN based group III-V nitride semiconductor light-emitting diode and method for fabricating the same
CN1256777C (zh) * 2002-10-17 2006-05-17 璨圆光电股份有限公司 氮化镓系发光二极管的结构及其制造方法
DE20320291U1 (de) * 2003-06-30 2004-07-29 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierendes Bauelement
TWI230473B (en) * 2003-03-10 2005-04-01 Sanken Electric Co Ltd Semiconductor light emitting device and manufacturing method thereof
JP4325232B2 (ja) * 2003-03-18 2009-09-02 日亜化学工業株式会社 窒化物半導体素子
TWM255514U (en) * 2003-10-16 2005-01-11 Arima Optoelectronics Corp Structure improvement of Gallium Indium Nitride light-emitting diode
KR100586948B1 (ko) 2004-01-19 2006-06-07 삼성전기주식회사 질화물 반도체 발광소자 및 그 제조방법
JP2005277372A (ja) * 2004-02-25 2005-10-06 Sanken Electric Co Ltd 半導体発光素子及びその製造方法
US20050218414A1 (en) * 2004-03-30 2005-10-06 Tetsuzo Ueda 4H-polytype gallium nitride-based semiconductor device on a 4H-polytype substrate
CN100372137C (zh) 2005-05-27 2008-02-27 晶能光电（江西）有限公司 具有上下电极结构的铟镓铝氮发光器件及其制造方法
KR101041843B1 (ko) * 2005-07-30 2011-06-17 삼성엘이디 주식회사 질화물계 화합물 반도체 발광소자 및 그 제조방법
JP2007208048A (ja) * 2006-02-02 2007-08-16 Fujikura Ltd 発光素子およびその製造方法
JP5019755B2 (ja) * 2006-02-08 2012-09-05 昭和電工株式会社 発光ダイオード及びその製造方法
JP5034275B2 (ja) * 2006-03-08 2012-09-26 ソニー株式会社 半導体レーザ装置
JP2007273764A (ja) * 2006-03-31 2007-10-18 Sony Corp 半導体発光装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101636820B (zh) * 2007-03-28 2011-09-07 松下电器产业株式会社 欧姆电极结构体及半导体元件
CN104393126A (zh) * 2014-11-14 2015-03-04 无锡科思电子科技有限公司 一种红色led芯片制程工艺中的n面蒸镀方法
WO2017088546A1 (zh) * 2015-11-24 2017-06-01 厦门市三安光电科技有限公司 发光二极管及其制作方法
CN110808319A (zh) * 2019-11-11 2020-02-18 中国科学院半导体研究所 反极性垂直发光二极管及其制备方法
CN110808319B (zh) * 2019-11-11 2021-08-17 中国科学院半导体研究所 反极性垂直发光二极管及其制备方法

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