DE602005018558D1 - Festkörperabbildungsvorrichtung, Herstellungsverfahren und Ansteuerverfahren dafür und Kamera - Google Patents

Festkörperabbildungsvorrichtung, Herstellungsverfahren und Ansteuerverfahren dafür und Kamera

Info

Publication number
DE602005018558D1
DE602005018558D1 DE602005018558T DE602005018558T DE602005018558D1 DE 602005018558 D1 DE602005018558 D1 DE 602005018558D1 DE 602005018558 T DE602005018558 T DE 602005018558T DE 602005018558 T DE602005018558 T DE 602005018558T DE 602005018558 D1 DE602005018558 D1 DE 602005018558D1
Authority
DE
Germany
Prior art keywords
camera
manufacturing
imaging device
solid state
state imaging
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005018558T
Other languages
English (en)
Inventor
Hideo Kanbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE602005018558D1 publication Critical patent/DE602005018558D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14806—Structural or functional details thereof
    • H01L27/14812—Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H01L27/14843—Interline transfer

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
DE602005018558T 2004-07-29 2005-07-25 Festkörperabbildungsvorrichtung, Herstellungsverfahren und Ansteuerverfahren dafür und Kamera Active DE602005018558D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004221981A JP4725049B2 (ja) 2004-07-29 2004-07-29 固体撮像装置およびその製造方法

Publications (1)

Publication Number Publication Date
DE602005018558D1 true DE602005018558D1 (de) 2010-02-04

Family

ID=35311292

Family Applications (2)

Application Number Title Priority Date Filing Date
DE602005023391T Active DE602005023391D1 (de) 2004-07-29 2005-07-25 Festkörper-Bildaufnahmevorrichtung, Herstellungsverfahren und Ansteuerverfahren dazu, und Kamera
DE602005018558T Active DE602005018558D1 (de) 2004-07-29 2005-07-25 Festkörperabbildungsvorrichtung, Herstellungsverfahren und Ansteuerverfahren dafür und Kamera

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE602005023391T Active DE602005023391D1 (de) 2004-07-29 2005-07-25 Festkörper-Bildaufnahmevorrichtung, Herstellungsverfahren und Ansteuerverfahren dazu, und Kamera

Country Status (7)

Country Link
US (7) US7348614B2 (de)
EP (4) EP1950809B1 (de)
JP (1) JP4725049B2 (de)
KR (1) KR101104439B1 (de)
CN (2) CN101425527B (de)
DE (2) DE602005023391D1 (de)
TW (1) TWI282242B (de)

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JP4281613B2 (ja) * 2004-05-07 2009-06-17 ソニー株式会社 固体撮像素子、固体撮像素子の製造方法、及び固体撮像素子の駆動方法
JP4725049B2 (ja) * 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
TW200746409A (en) * 2005-12-01 2007-12-16 Matsushita Electric Ind Co Ltd Solid-state image pickup device and camera including the same
JP2008060198A (ja) * 2006-08-30 2008-03-13 Sony Corp 固体撮像装置の製造方法
JP4872779B2 (ja) * 2007-04-24 2012-02-08 ソニー株式会社 転送パルス供給回路及び固体撮像装置
JP4344759B2 (ja) * 2007-06-15 2009-10-14 シャープ株式会社 固体撮像素子およびその製造方法、固体撮像装置、電子情報機器
US8120130B2 (en) * 2007-06-21 2012-02-21 Panasonic Corporation Solid-state imaging device and method for manufacturing the same
JP5176453B2 (ja) * 2007-09-27 2013-04-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像装置
US8395686B2 (en) * 2007-12-06 2013-03-12 Sony Corporation Solid-state imaging device, method of manufacturing the same, and camera
JP2009176800A (ja) * 2008-01-22 2009-08-06 Sony Corp 固体撮像装置およびその製造方法
JP2009238875A (ja) * 2008-03-26 2009-10-15 Panasonic Corp 固体撮像装置
JP5296406B2 (ja) 2008-04-02 2013-09-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP4835631B2 (ja) 2008-04-21 2011-12-14 ソニー株式会社 固体撮像装置及び電子機器の製造方法
JP2010073901A (ja) * 2008-09-18 2010-04-02 Sony Corp 固体撮像装置、固体撮像装置の製造方法、及び電子機器
JP2010074081A (ja) * 2008-09-22 2010-04-02 Panasonic Corp 固体撮像装置
JP2010177599A (ja) 2009-01-30 2010-08-12 Panasonic Corp 固体撮像装置及びその製造方法
JP5375142B2 (ja) * 2009-02-05 2013-12-25 ソニー株式会社 固体撮像装置、固体撮像装置の駆動方法、及び電子機器
WO2010103814A1 (ja) 2009-03-11 2010-09-16 パナソニック株式会社 固体撮像装置
JP5452511B2 (ja) * 2011-01-14 2014-03-26 浜松ホトニクス株式会社 固体撮像装置
JP5680979B2 (ja) 2011-01-20 2015-03-04 浜松ホトニクス株式会社 固体撮像装置
JP6106382B2 (ja) * 2012-08-24 2017-03-29 シャープ株式会社 固体撮像素子およびその製造方法、電子情報機器
JP7067221B2 (ja) * 2018-04-12 2022-05-16 コニカミノルタ株式会社 Ｘ線撮影システム
CN110444648B (zh) * 2019-07-29 2020-09-04 南京中电熊猫平板显示科技有限公司 微型发光二极管阵列显示背板及其制造方法和修复方法
CN112017596A (zh) * 2020-09-11 2020-12-01 京东方科技集团股份有限公司 一种显示面板、亮度调整方法及显示装置

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JP3123068B2 (ja) 1990-09-05 2001-01-09 ソニー株式会社 固体撮像装置
JPH0575930A (ja) 1991-09-12 1993-03-26 Canon Inc 静止画撮像装置
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JPH05267356A (ja) * 1992-03-23 1993-10-15 Sony Corp 半導体装置およびその製造方法
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JP2878546B2 (ja) * 1993-02-16 1999-04-05 シャープ株式会社 固体撮像装置及びその製造方法
JPH06268192A (ja) * 1993-03-12 1994-09-22 Toshiba Corp 固体撮像装置
JP3456000B2 (ja) 1993-05-17 2003-10-14 ソニー株式会社 固体撮像素子及びその製造方法
JP2571011B2 (ja) * 1993-12-20 1997-01-16 日本電気株式会社 半導体装置の製造方法
JPH07283387A (ja) 1994-04-14 1995-10-27 Sony Corp 固体撮像素子
JPH08236743A (ja) 1995-02-27 1996-09-13 Sony Corp 電荷転送素子
KR0151266B1 (ko) * 1995-06-22 1998-10-01 문정환 고체촬상소자
JPH09172156A (ja) * 1995-12-20 1997-06-30 Toshiba Corp 固体撮像素子及びその製造方法
JPH09219506A (ja) * 1996-02-07 1997-08-19 Sony Corp 固体撮像素子
KR100209758B1 (ko) * 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
JP2943714B2 (ja) * 1996-08-22 1999-08-30 日本電気株式会社 固体撮像装置
JP3329291B2 (ja) * 1998-02-06 2002-09-30 日本電気株式会社 電荷転送装置
JP2894341B1 (ja) * 1998-03-12 1999-05-24 日本電気株式会社 固体撮像装置の駆動方法
JP3988239B2 (ja) * 1998-03-19 2007-10-10 ソニー株式会社 固体撮像素子及びその製造方法
JP2000022134A (ja) * 1998-07-01 2000-01-21 Matsushita Electron Corp 固体撮像装置およびその駆動方法
JP4178638B2 (ja) 1998-12-25 2008-11-12 ソニー株式会社 固体撮像素子及びその駆動方法
JP4397989B2 (ja) * 1998-12-28 2010-01-13 浜松ホトニクス株式会社 半導体エネルギー検出器
JP3991543B2 (ja) * 2000-01-11 2007-10-17 株式会社日立製作所 撮像装置
JP2001352050A (ja) 2000-06-07 2001-12-21 Sony Corp 固体撮像装置およびその製造方法
JP2002076319A (ja) * 2000-08-28 2002-03-15 Sony Corp 固体撮像素子
JP2002076320A (ja) 2000-08-28 2002-03-15 Sony Corp 固体撮像素子
US6809359B2 (en) * 2001-05-16 2004-10-26 Matsushita Electric Industrial Co., Ltd. Solid-state imaging device, method for manufacturing the same, and method for driving the same
JP4404239B2 (ja) 2001-08-15 2010-01-27 株式会社リコー 画像形成装置
KR100945467B1 (ko) * 2001-10-09 2010-03-05 가부시키가이샤 한도오따이 에네루기 켄큐쇼 스위칭소자, 표시장치, 그 스위칭소자를 사용한 발광장치및 반도체장치
JP4249433B2 (ja) * 2002-05-15 2009-04-02 Ｎｅｃエレクトロニクス株式会社 電荷転送素子及びその製造方法
JP2004221981A (ja) 2003-01-15 2004-08-05 Fujitsu Ltd 電話機及びコンピュータプログラム
JP4725049B2 (ja) * 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法

Also Published As

Publication number Publication date
JP2006041369A (ja) 2006-02-09
DE602005023391D1 (de) 2010-10-21
JP4725049B2 (ja) 2011-07-13
US20090269876A1 (en) 2009-10-29
EP1950809B1 (de) 2009-12-23
EP1622202A3 (de) 2006-09-20
EP2224488B1 (de) 2011-11-02
EP2259317A1 (de) 2010-12-08
US20070164334A1 (en) 2007-07-19
EP1622202B1 (de) 2010-09-08
EP1622202A2 (de) 2006-02-01
EP2259317B1 (de) 2012-07-18
US20090268073A1 (en) 2009-10-29
US7348614B2 (en) 2008-03-25
TWI282242B (en) 2007-06-01
US20070158676A1 (en) 2007-07-12
US20060022235A1 (en) 2006-02-02
EP1950809A1 (de) 2008-07-30
US8883542B2 (en) 2014-11-11
CN1728783A (zh) 2006-02-01
CN100454983C (zh) 2009-01-21
US20070155042A1 (en) 2007-07-05
CN101425527B (zh) 2010-11-03
US20090268066A1 (en) 2009-10-29
TW200616445A (en) 2006-05-16
US7952125B2 (en) 2011-05-31
KR20060048917A (ko) 2006-05-18
US8149306B2 (en) 2012-04-03
US7667251B2 (en) 2010-02-23
US7534644B2 (en) 2009-05-19
CN101425527A (zh) 2009-05-06
EP2224488B9 (de) 2012-03-21
KR101104439B1 (ko) 2012-01-12
US7446358B2 (en) 2008-11-04
EP2224488A1 (de) 2010-09-01

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