US7827348B2
(en)
*
|
2000-01-06 |
2010-11-02 |
Super Talent Electronics, Inc. |
High performance flash memory devices (FMD)
|
US7886108B2
(en)
*
|
2000-01-06 |
2011-02-08 |
Super Talent Electronics, Inc. |
Methods and systems of managing memory addresses in a large capacity multi-level cell (MLC) based flash memory device
|
US20080209114A1
(en)
*
|
1999-08-04 |
2008-08-28 |
Super Talent Electronics, Inc. |
Reliability High Endurance Non-Volatile Memory Device with Zone-Based Non-Volatile Memory File System
|
US6961546B1
(en)
*
|
1999-10-21 |
2005-11-01 |
Broadcom Corporation |
Adaptive radio transceiver with offset PLL with subsampling mixers
|
US20080320209A1
(en)
*
|
2000-01-06 |
2008-12-25 |
Super Talent Electronics, Inc. |
High Performance and Endurance Non-volatile Memory Based Storage Systems
|
US7071771B2
(en)
*
|
2000-12-11 |
2006-07-04 |
Kabushiki Kaisha Toshiba |
Current difference divider circuit
|
JP2002184190A
(ja)
*
|
2000-12-11 |
2002-06-28 |
Toshiba Corp |
不揮発性半導体記憶装置
|
US6757193B2
(en)
*
|
2001-05-31 |
2004-06-29 |
Macronix International Co., Ltd. |
Coding method of multi-level memory cell
|
US6929634B2
(en)
*
|
2001-08-22 |
2005-08-16 |
Gore Enterprise Holdings, Inc. |
Apparatus and methods for treating stroke and controlling cerebral flow characteristics
|
JP4034949B2
(ja)
*
|
2001-09-06 |
2008-01-16 |
株式会社ルネサステクノロジ |
不揮発性半導体記憶装置
|
JP3802411B2
(ja)
*
|
2001-12-20 |
2006-07-26 |
株式会社東芝 |
不揮発性半導体記憶装置のデータコピー方法
|
US6871257B2
(en)
|
2002-02-22 |
2005-03-22 |
Sandisk Corporation |
Pipelined parallel programming operation in a non-volatile memory system
|
US7136304B2
(en)
*
|
2002-10-29 |
2006-11-14 |
Saifun Semiconductor Ltd |
Method, system and circuit for programming a non-volatile memory array
|
US6829167B2
(en)
*
|
2002-12-12 |
2004-12-07 |
Sandisk Corporation |
Error recovery for nonvolatile memory
|
US7392436B2
(en)
*
|
2003-05-08 |
2008-06-24 |
Micron Technology, Inc. |
Program failure recovery
|
US7237074B2
(en)
|
2003-06-13 |
2007-06-26 |
Sandisk Corporation |
Tracking cells for a memory system
|
JP4156499B2
(ja)
|
2003-11-28 |
2008-09-24 |
株式会社日立製作所 |
ディスクアレイ装置
|
US7173863B2
(en)
*
|
2004-03-08 |
2007-02-06 |
Sandisk Corporation |
Flash controller cache architecture
|
TWI289304B
(en)
*
|
2004-02-17 |
2007-11-01 |
Hon Hai Prec Ind Co Ltd |
Data structure design system and method for prolonging useful life of FRAM
|
US7213177B2
(en)
*
|
2004-03-14 |
2007-05-01 |
Benq Corporation |
Method for detecting and eliminating errors in application data of an electronic device
|
US7490283B2
(en)
|
2004-05-13 |
2009-02-10 |
Sandisk Corporation |
Pipelined data relocation and improved chip architectures
|
US8429313B2
(en)
*
|
2004-05-27 |
2013-04-23 |
Sandisk Technologies Inc. |
Configurable ready/busy control
|
US7009889B2
(en)
*
|
2004-05-28 |
2006-03-07 |
Sandisk Corporation |
Comprehensive erase verification for non-volatile memory
|
US7401258B1
(en)
*
|
2004-09-30 |
2008-07-15 |
Xilinx, Inc. |
Circuit for and method of accessing instruction data written to a memory
|
KR100576485B1
(ko)
|
2004-12-06 |
2006-05-10 |
주식회사 하이닉스반도체 |
플래쉬 메모리 소자의 프로그램 검증 방법
|
GB2421092B
(en)
*
|
2004-12-07 |
2008-12-03 |
Hewlett Packard Development Co |
Bufferless writing of data to memory
|
US7158421B2
(en)
*
|
2005-04-01 |
2007-01-02 |
Sandisk Corporation |
Use of data latches in multi-phase programming of non-volatile memories
|
US7120051B2
(en)
*
|
2004-12-14 |
2006-10-10 |
Sandisk Corporation |
Pipelined programming of non-volatile memories using early data
|
US7420847B2
(en)
*
|
2004-12-14 |
2008-09-02 |
Sandisk Corporation |
Multi-state memory having data recovery after program fail
|
US7849381B2
(en)
*
|
2004-12-21 |
2010-12-07 |
Sandisk Corporation |
Method for copying data in reprogrammable non-volatile memory
|
US7882299B2
(en)
*
|
2004-12-21 |
2011-02-01 |
Sandisk Corporation |
System and method for use of on-chip non-volatile memory write cache
|
US7409473B2
(en)
*
|
2004-12-21 |
2008-08-05 |
Sandisk Corporation |
Off-chip data relocation
|
US7447078B2
(en)
*
|
2005-04-01 |
2008-11-04 |
Sandisk Corporation |
Method for non-volatile memory with background data latch caching during read operations
|
US7206230B2
(en)
|
2005-04-01 |
2007-04-17 |
Sandisk Corporation |
Use of data latches in cache operations of non-volatile memories
|
KR100626392B1
(ko)
*
|
2005-04-01 |
2006-09-20 |
삼성전자주식회사 |
읽기 속도를 향상시킬 수 있는 플래시 메모리 장치
|
US7463521B2
(en)
*
|
2005-04-01 |
2008-12-09 |
Sandisk Corporation |
Method for non-volatile memory with managed execution of cached data
|
EP1898424A4
(de)
*
|
2005-05-30 |
2008-12-10 |
Seiko Epson Corp |
Halbleiter-speichervorrichtung
|
US7694071B1
(en)
*
|
2005-07-12 |
2010-04-06 |
Seagate Technology Llc |
Disk drives and methods allowing configurable zoning
|
US7747927B2
(en)
|
2005-11-22 |
2010-06-29 |
Sandisk Corporation |
Method for adapting a memory system to operate with a legacy host originally designed to operate with a different memory system
|
US7739472B2
(en)
|
2005-11-22 |
2010-06-15 |
Sandisk Corporation |
Memory system for legacy hosts
|
JP5192388B2
(ja)
*
|
2005-11-22 |
2013-05-08 |
サンディスク テクノロジィース インコーポレイテッド |
レガシーホストのための方法およびメモリシステム
|
US7307887B2
(en)
*
|
2005-12-29 |
2007-12-11 |
Sandisk Corporation |
Continued verification in non-volatile memory write operations
|
US7352629B2
(en)
*
|
2005-12-29 |
2008-04-01 |
Sandisk Corporation |
Systems for continued verification in non-volatile memory write operations
|
US20070234143A1
(en)
*
|
2006-01-25 |
2007-10-04 |
Samsung Electronics Co., Ltd. |
Semiconductor memory devices and methods of testing for failed bits of semiconductor memory devices
|
US7428180B2
(en)
*
|
2006-01-25 |
2008-09-23 |
Samsung Electronics Co., Ltd. |
Semiconductor memory devices and methods of testing for failed bits of semiconductor memory devices
|
US7773421B2
(en)
*
|
2006-05-08 |
2010-08-10 |
Macronix International Co., Ltd. |
Method and apparatus for accessing memory with read error by changing comparison
|
US8077516B2
(en)
*
|
2006-05-08 |
2011-12-13 |
Macronix International Co., Ltd. |
Method and apparatus for accessing memory with read error by changing comparison
|
US7471562B2
(en)
*
|
2006-05-08 |
2008-12-30 |
Macronix International Co., Ltd. |
Method and apparatus for accessing nonvolatile memory with read error by changing read reference
|
WO2007132457A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Combined distortion estimation and error correction coding for memory devices
|
WO2007132452A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies |
Reducing programming error in memory devices
|
WO2007132456A2
(en)
|
2006-05-12 |
2007-11-22 |
Anobit Technologies Ltd. |
Memory device with adaptive capacity
|
US8050086B2
(en)
|
2006-05-12 |
2011-11-01 |
Anobit Technologies Ltd. |
Distortion estimation and cancellation in memory devices
|
US7355892B2
(en)
*
|
2006-06-30 |
2008-04-08 |
Sandisk Corporation |
Partial page fail bit detection in flash memory devices
|
US7304893B1
(en)
|
2006-06-30 |
2007-12-04 |
Sandisk Corporation |
Method of partial page fail bit detection in flash memory devices
|
US7680841B2
(en)
*
|
2006-07-26 |
2010-03-16 |
International Business Machines Corporation |
Determining whether data written to source storage locations according to a write order is copied to corresponding target storage locations in the write order
|
KR100744013B1
(ko)
*
|
2006-07-31 |
2007-07-30 |
삼성전자주식회사 |
플래시 메모리 장치 및 그것의 소거 방법
|
EP2487794A3
(de)
*
|
2006-08-22 |
2013-02-13 |
Mosaid Technologies Incorporated |
Modulare Befehlsstruktur für einen Speicher und Speichersystem
|
US8060806B2
(en)
|
2006-08-27 |
2011-11-15 |
Anobit Technologies Ltd. |
Estimation of non-linear distortion in memory devices
|
US7450425B2
(en)
*
|
2006-08-30 |
2008-11-11 |
Micron Technology, Inc. |
Non-volatile memory cell read failure reduction
|
KR100819106B1
(ko)
*
|
2006-09-27 |
2008-04-02 |
삼성전자주식회사 |
상변화 메모리 장치에서의 라이트 동작방법
|
US7821826B2
(en)
|
2006-10-30 |
2010-10-26 |
Anobit Technologies, Ltd. |
Memory cell readout using successive approximation
|
WO2008053472A2
(en)
|
2006-10-30 |
2008-05-08 |
Anobit Technologies Ltd. |
Reading memory cells using multiple thresholds
|
KR100849715B1
(ko)
*
|
2006-11-07 |
2008-08-01 |
주식회사 하이닉스반도체 |
글로벌 페이지 버퍼를 구비하는 낸드형 플래쉬 메모리소자및 데이터 리드 방법
|
US7924648B2
(en)
|
2006-11-28 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory power and performance management
|
WO2008068747A2
(en)
|
2006-12-03 |
2008-06-12 |
Anobit Technologies Ltd. |
Automatic defect management in memory devices
|
KR100926475B1
(ko)
*
|
2006-12-11 |
2009-11-12 |
삼성전자주식회사 |
멀티 비트 플래시 메모리 장치 및 그것의 프로그램 방법
|
US7900102B2
(en)
|
2006-12-17 |
2011-03-01 |
Anobit Technologies Ltd. |
High-speed programming of memory devices
|
WO2008077238A1
(en)
*
|
2006-12-22 |
2008-07-03 |
Sidense Corp. |
Dual function data register
|
CA2729505C
(en)
*
|
2006-12-22 |
2012-11-13 |
Sidense Corp. |
Dual function data register
|
KR100897604B1
(ko)
|
2007-01-03 |
2009-05-14 |
삼성전자주식회사 |
검증 성공된 메모리 셀에 대하여 재검증이 가능한 비휘발성 메모리 장치의 구동 방법 및 비휘발성 메모리 장치
|
KR100877610B1
(ko)
*
|
2007-01-23 |
2009-01-09 |
삼성전자주식회사 |
페이지 데이터 저장 방법과 저장 장치
|
KR100885912B1
(ko)
*
|
2007-01-23 |
2009-02-26 |
삼성전자주식회사 |
기입된 데이터 값에 기초하여 데이터를 선택적으로검증하는 데이터 검증 방법 및 반도체 메모리 장치
|
US7751240B2
(en)
|
2007-01-24 |
2010-07-06 |
Anobit Technologies Ltd. |
Memory device with negative thresholds
|
US8151166B2
(en)
|
2007-01-24 |
2012-04-03 |
Anobit Technologies Ltd. |
Reduction of back pattern dependency effects in memory devices
|
KR100877609B1
(ko)
*
|
2007-01-29 |
2009-01-09 |
삼성전자주식회사 |
버퍼 메모리의 플래그 셀 어레이를 이용하여 데이터 오류 정정을 수행하는 반도체 메모리 시스템 및 그 구동 방법
|
KR100871700B1
(ko)
*
|
2007-02-13 |
2008-12-08 |
삼성전자주식회사 |
불휘발성 메모리 장치에서 전하 손실에 기인한 오류 데이터정정 방법
|
US8369141B2
(en)
|
2007-03-12 |
2013-02-05 |
Apple Inc. |
Adaptive estimation of memory cell read thresholds
|
US8001320B2
(en)
|
2007-04-22 |
2011-08-16 |
Anobit Technologies Ltd. |
Command interface for memory devices
|
WO2008139441A2
(en)
|
2007-05-12 |
2008-11-20 |
Anobit Technologies Ltd. |
Memory device with internal signal processing unit
|
US8234545B2
(en)
|
2007-05-12 |
2012-07-31 |
Apple Inc. |
Data storage with incremental redundancy
|
US7925936B1
(en)
|
2007-07-13 |
2011-04-12 |
Anobit Technologies Ltd. |
Memory device with non-uniform programming levels
|
US8259497B2
(en)
|
2007-08-06 |
2012-09-04 |
Apple Inc. |
Programming schemes for multi-level analog memory cells
|
US7944702B2
(en)
|
2007-08-27 |
2011-05-17 |
Super Talent Electronics, Inc. |
Press-push flash drive apparatus with metal tubular casing and snap-coupled plastic sleeve
|
US7619925B2
(en)
*
|
2007-08-29 |
2009-11-17 |
Macronix International Co., Ltd. |
Virtual ground array memory and programming method thereof
|
US8174905B2
(en)
|
2007-09-19 |
2012-05-08 |
Anobit Technologies Ltd. |
Programming orders for reducing distortion in arrays of multi-level analog memory cells
|
WO2009095902A2
(en)
|
2008-01-31 |
2009-08-06 |
Densbits Technologies Ltd. |
Systems and methods for handling immediate data errors in flash memory
|
US8650352B2
(en)
*
|
2007-09-20 |
2014-02-11 |
Densbits Technologies Ltd. |
Systems and methods for determining logical values of coupled flash memory cells
|
US7773413B2
(en)
|
2007-10-08 |
2010-08-10 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells in the presence of temperature variations
|
US8068360B2
(en)
|
2007-10-19 |
2011-11-29 |
Anobit Technologies Ltd. |
Reading analog memory cells using built-in multi-threshold commands
|
US8000141B1
(en)
|
2007-10-19 |
2011-08-16 |
Anobit Technologies Ltd. |
Compensation for voltage drifts in analog memory cells
|
US8527819B2
(en)
*
|
2007-10-19 |
2013-09-03 |
Apple Inc. |
Data storage in analog memory cell arrays having erase failures
|
US8694715B2
(en)
|
2007-10-22 |
2014-04-08 |
Densbits Technologies Ltd. |
Methods for adaptively programming flash memory devices and flash memory systems incorporating same
|
US8443242B2
(en)
|
2007-10-25 |
2013-05-14 |
Densbits Technologies Ltd. |
Systems and methods for multiple coding rates in flash devices
|
KR101509836B1
(ko)
|
2007-11-13 |
2015-04-06 |
애플 인크. |
멀티 유닛 메모리 디바이스에서의 메모리 유닛의 최적화된 선택
|
US7924628B2
(en)
*
|
2007-11-14 |
2011-04-12 |
Spansion Israel Ltd |
Operation of a non-volatile memory array
|
US8098532B2
(en)
|
2007-11-20 |
2012-01-17 |
Kabushiki Kaisha Toshiba |
Non-volatile semiconductor storage device with address search circuit used when writing
|
US7945825B2
(en)
*
|
2007-11-25 |
2011-05-17 |
Spansion Isreal, Ltd |
Recovery while programming non-volatile memory (NVM)
|
US8225181B2
(en)
|
2007-11-30 |
2012-07-17 |
Apple Inc. |
Efficient re-read operations from memory devices
|
US8116083B2
(en)
*
|
2007-12-04 |
2012-02-14 |
Super Talent Electronics, Inc. |
Lipstick-type USB device with tubular housing
|
WO2009072103A2
(en)
|
2007-12-05 |
2009-06-11 |
Densbits Technologies Ltd. |
Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated bch codes and/or designation of 'first below' cells
|
WO2009072105A2
(en)
*
|
2007-12-05 |
2009-06-11 |
Densbits Technologies Ltd. |
A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications
|
WO2009072104A2
(en)
|
2007-12-05 |
2009-06-11 |
Densbits Technologies Ltd. |
Flash memory device with physical cell value deterioration accommodation and methods useful in conjunction therewith
|
US8209588B2
(en)
|
2007-12-12 |
2012-06-26 |
Anobit Technologies Ltd. |
Efficient interference cancellation in analog memory cell arrays
|
US8359516B2
(en)
|
2007-12-12 |
2013-01-22 |
Densbits Technologies Ltd. |
Systems and methods for error correction and decoding on multi-level physical media
|
WO2009074979A2
(en)
|
2007-12-12 |
2009-06-18 |
Densbits Technologies Ltd. |
Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
|
US8456905B2
(en)
|
2007-12-16 |
2013-06-04 |
Apple Inc. |
Efficient data storage in multi-plane memory devices
|
US8327246B2
(en)
|
2007-12-18 |
2012-12-04 |
Densbits Technologies Ltd. |
Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
|
US8085586B2
(en)
|
2007-12-27 |
2011-12-27 |
Anobit Technologies Ltd. |
Wear level estimation in analog memory cells
|
US8156398B2
(en)
|
2008-02-05 |
2012-04-10 |
Anobit Technologies Ltd. |
Parameter estimation based on error correction code parity check equations
|
US20090201748A1
(en)
*
|
2008-02-11 |
2009-08-13 |
Sony Corporation |
Removable nonvolatile memory system with destructive read
|
US7924587B2
(en)
|
2008-02-21 |
2011-04-12 |
Anobit Technologies Ltd. |
Programming of analog memory cells using a single programming pulse per state transition
|
US7864573B2
(en)
|
2008-02-24 |
2011-01-04 |
Anobit Technologies Ltd. |
Programming analog memory cells for reduced variance after retention
|
US8230300B2
(en)
|
2008-03-07 |
2012-07-24 |
Apple Inc. |
Efficient readout from analog memory cells using data compression
|
US8400858B2
(en)
|
2008-03-18 |
2013-03-19 |
Apple Inc. |
Memory device with reduced sense time readout
|
US8059457B2
(en)
|
2008-03-18 |
2011-11-15 |
Anobit Technologies Ltd. |
Memory device with multiple-accuracy read commands
|
US8972472B2
(en)
*
|
2008-03-25 |
2015-03-03 |
Densbits Technologies Ltd. |
Apparatus and methods for hardware-efficient unbiased rounding
|
US8116122B2
(en)
|
2008-06-27 |
2012-02-14 |
Seagate Technology Llc |
Spin-transfer torque memory self-reference read method
|
US8116123B2
(en)
*
|
2008-06-27 |
2012-02-14 |
Seagate Technology Llc |
Spin-transfer torque memory non-destructive self-reference read method
|
TWI386803B
(zh)
*
|
2008-07-02 |
2013-02-21 |
Silicon Motion Inc |
快閃記憶卡及快閃記憶體預防資料毀損的方法
|
US7995388B1
(en)
|
2008-08-05 |
2011-08-09 |
Anobit Technologies Ltd. |
Data storage using modified voltages
|
US7924613B1
(en)
|
2008-08-05 |
2011-04-12 |
Anobit Technologies Ltd. |
Data storage in analog memory cells with protection against programming interruption
|
US8332725B2
(en)
|
2008-08-20 |
2012-12-11 |
Densbits Technologies Ltd. |
Reprogramming non volatile memory portions
|
US8949684B1
(en)
|
2008-09-02 |
2015-02-03 |
Apple Inc. |
Segmented data storage
|
US8169825B1
(en)
|
2008-09-02 |
2012-05-01 |
Anobit Technologies Ltd. |
Reliable data storage in analog memory cells subjected to long retention periods
|
US8000135B1
(en)
|
2008-09-14 |
2011-08-16 |
Anobit Technologies Ltd. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US8482978B1
(en)
|
2008-09-14 |
2013-07-09 |
Apple Inc. |
Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
|
US7969782B2
(en)
|
2008-09-26 |
2011-06-28 |
Micron Technology, Inc. |
Determining memory page status
|
CN101685676B
(zh)
*
|
2008-09-26 |
2014-07-02 |
美光科技公司 |
确定存储器页状况
|
US8239734B1
(en)
|
2008-10-15 |
2012-08-07 |
Apple Inc. |
Efficient data storage in storage device arrays
|
US7813168B2
(en)
*
|
2008-10-27 |
2010-10-12 |
Seagate Technology Llc |
Spin-transfer torque memory self-reference read and write assist methods
|
US7826260B2
(en)
*
|
2008-10-27 |
2010-11-02 |
Seagate Technology Llc |
Spin-transfer torque memory self-reference read and write assist methods
|
US8261159B1
(en)
|
2008-10-30 |
2012-09-04 |
Apple, Inc. |
Data scrambling schemes for memory devices
|
US8095834B2
(en)
|
2008-10-30 |
2012-01-10 |
Micron Technology, Inc. |
Macro and command execution from memory array
|
US7898838B2
(en)
|
2008-10-31 |
2011-03-01 |
Seagate Technology Llc |
Resistive sense memory calibration for self-reference read method
|
US7876604B2
(en)
*
|
2008-11-05 |
2011-01-25 |
Seagate Technology Llc |
Stram with self-reference read scheme
|
US8208304B2
(en)
|
2008-11-16 |
2012-06-26 |
Anobit Technologies Ltd. |
Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
|
US8159864B2
(en)
*
|
2008-12-08 |
2012-04-17 |
Qualcomm Incorporated |
Data integrity preservation in spin transfer torque magnetoresistive random access memory
|
US8174857B1
(en)
|
2008-12-31 |
2012-05-08 |
Anobit Technologies Ltd. |
Efficient readout schemes for analog memory cell devices using multiple read threshold sets
|
US8248831B2
(en)
|
2008-12-31 |
2012-08-21 |
Apple Inc. |
Rejuvenation of analog memory cells
|
US8924661B1
(en)
|
2009-01-18 |
2014-12-30 |
Apple Inc. |
Memory system including a controller and processors associated with memory devices
|
US8161355B2
(en)
*
|
2009-02-11 |
2012-04-17 |
Mosys, Inc. |
Automatic refresh for improving data retention and endurance characteristics of an embedded non-volatile memory in a standard CMOS logic process
|
US8228701B2
(en)
|
2009-03-01 |
2012-07-24 |
Apple Inc. |
Selective activation of programming schemes in analog memory cell arrays
|
US8296628B2
(en)
*
|
2009-03-06 |
2012-10-23 |
Texas Instruments Incorporated |
Data path read/write sequencing for reduced power consumption
|
US8259506B1
(en)
|
2009-03-25 |
2012-09-04 |
Apple Inc. |
Database of memory read thresholds
|
US8832354B2
(en)
|
2009-03-25 |
2014-09-09 |
Apple Inc. |
Use of host system resources by memory controller
|
US8458574B2
(en)
|
2009-04-06 |
2013-06-04 |
Densbits Technologies Ltd. |
Compact chien-search based decoding apparatus and method
|
US8819385B2
(en)
|
2009-04-06 |
2014-08-26 |
Densbits Technologies Ltd. |
Device and method for managing a flash memory
|
US8238157B1
(en)
|
2009-04-12 |
2012-08-07 |
Apple Inc. |
Selective re-programming of analog memory cells
|
US8566510B2
(en)
|
2009-05-12 |
2013-10-22 |
Densbits Technologies Ltd. |
Systems and method for flash memory management
|
US8479080B1
(en)
|
2009-07-12 |
2013-07-02 |
Apple Inc. |
Adaptive over-provisioning in memory systems
|
US8305812B2
(en)
*
|
2009-08-26 |
2012-11-06 |
Densbits Technologies Ltd. |
Flash memory module and method for programming a page of flash memory cells
|
US8995197B1
(en)
|
2009-08-26 |
2015-03-31 |
Densbits Technologies Ltd. |
System and methods for dynamic erase and program control for flash memory device memories
|
US8868821B2
(en)
|
2009-08-26 |
2014-10-21 |
Densbits Technologies Ltd. |
Systems and methods for pre-equalization and code design for a flash memory
|
US9330767B1
(en)
|
2009-08-26 |
2016-05-03 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Flash memory module and method for programming a page of flash memory cells
|
US8730729B2
(en)
|
2009-10-15 |
2014-05-20 |
Densbits Technologies Ltd. |
Systems and methods for averaging error rates in non-volatile devices and storage systems
|
US8495465B1
(en)
|
2009-10-15 |
2013-07-23 |
Apple Inc. |
Error correction coding over multiple memory pages
|
US8724387B2
(en)
|
2009-10-22 |
2014-05-13 |
Densbits Technologies Ltd. |
Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
|
US8214700B2
(en)
*
|
2009-10-28 |
2012-07-03 |
Sandisk Technologies Inc. |
Non-volatile memory and method with post-write read and adaptive re-write to manage errors
|
US8634240B2
(en)
*
|
2009-10-28 |
2014-01-21 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with accelerated post-write read to manage errors
|
US8423866B2
(en)
*
|
2009-10-28 |
2013-04-16 |
SanDisk Technologies, Inc. |
Non-volatile memory and method with post-write read and adaptive re-write to manage errors
|
US8504884B2
(en)
*
|
2009-10-29 |
2013-08-06 |
Freescale Semiconductor, Inc. |
Threshold voltage techniques for detecting an imminent read failure in a memory array
|
US8626988B2
(en)
*
|
2009-11-19 |
2014-01-07 |
Densbits Technologies Ltd. |
System and method for uncoded bit error rate equalization via interleaving
|
US8677054B1
(en)
|
2009-12-16 |
2014-03-18 |
Apple Inc. |
Memory management schemes for non-volatile memory devices
|
US9037777B2
(en)
|
2009-12-22 |
2015-05-19 |
Densbits Technologies Ltd. |
Device, system, and method for reducing program/read disturb in flash arrays
|
US8607124B2
(en)
*
|
2009-12-24 |
2013-12-10 |
Densbits Technologies Ltd. |
System and method for setting a flash memory cell read threshold
|
US8694814B1
(en)
|
2010-01-10 |
2014-04-08 |
Apple Inc. |
Reuse of host hibernation storage space by memory controller
|
US8677203B1
(en)
|
2010-01-11 |
2014-03-18 |
Apple Inc. |
Redundant data storage schemes for multi-die memory systems
|
US8700970B2
(en)
*
|
2010-02-28 |
2014-04-15 |
Densbits Technologies Ltd. |
System and method for multi-dimensional decoding
|
US8527840B2
(en)
|
2010-04-06 |
2013-09-03 |
Densbits Technologies Ltd. |
System and method for restoring damaged data programmed on a flash device
|
US8516274B2
(en)
|
2010-04-06 |
2013-08-20 |
Densbits Technologies Ltd. |
Method, system and medium for analog encryption in a flash memory
|
US8745317B2
(en)
|
2010-04-07 |
2014-06-03 |
Densbits Technologies Ltd. |
System and method for storing information in a multi-level cell memory
|
US9021177B2
(en)
|
2010-04-29 |
2015-04-28 |
Densbits Technologies Ltd. |
System and method for allocating and using spare blocks in a flash memory
|
US8694853B1
(en)
|
2010-05-04 |
2014-04-08 |
Apple Inc. |
Read commands for reading interfering memory cells
|
US8799747B2
(en)
*
|
2010-06-03 |
2014-08-05 |
Seagate Technology Llc |
Data hardening to compensate for loss of data retention characteristics in a non-volatile memory
|
US8572423B1
(en)
|
2010-06-22 |
2013-10-29 |
Apple Inc. |
Reducing peak current in memory systems
|
US8539311B2
(en)
|
2010-07-01 |
2013-09-17 |
Densbits Technologies Ltd. |
System and method for data recovery in multi-level cell memories
|
US8621321B2
(en)
|
2010-07-01 |
2013-12-31 |
Densbits Technologies Ltd. |
System and method for multi-dimensional encoding and decoding
|
US20120008414A1
(en)
|
2010-07-06 |
2012-01-12 |
Michael Katz |
Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
|
US8514630B2
(en)
|
2010-07-09 |
2013-08-20 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays: current based approach
|
US8305807B2
(en)
|
2010-07-09 |
2012-11-06 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US8432732B2
(en)
|
2010-07-09 |
2013-04-30 |
Sandisk Technologies Inc. |
Detection of word-line leakage in memory arrays
|
US8595591B1
(en)
|
2010-07-11 |
2013-11-26 |
Apple Inc. |
Interference-aware assignment of programming levels in analog memory cells
|
US9104580B1
(en)
|
2010-07-27 |
2015-08-11 |
Apple Inc. |
Cache memory for hybrid disk drives
|
US8645794B1
(en)
|
2010-07-31 |
2014-02-04 |
Apple Inc. |
Data storage in analog memory cells using a non-integer number of bits per cell
|
US8856475B1
(en)
|
2010-08-01 |
2014-10-07 |
Apple Inc. |
Efficient selection of memory blocks for compaction
|
US8694854B1
(en)
|
2010-08-17 |
2014-04-08 |
Apple Inc. |
Read threshold setting based on soft readout statistics
|
US8964464B2
(en)
|
2010-08-24 |
2015-02-24 |
Densbits Technologies Ltd. |
System and method for accelerated sampling
|
US8508995B2
(en)
|
2010-09-15 |
2013-08-13 |
Densbits Technologies Ltd. |
System and method for adjusting read voltage thresholds in memories
|
US9021181B1
(en)
|
2010-09-27 |
2015-04-28 |
Apple Inc. |
Memory management for unifying memory cell conditions by using maximum time intervals
|
US9063878B2
(en)
|
2010-11-03 |
2015-06-23 |
Densbits Technologies Ltd. |
Method, system and computer readable medium for copy back
|
US8850100B2
(en)
|
2010-12-07 |
2014-09-30 |
Densbits Technologies Ltd. |
Interleaving codeword portions between multiple planes and/or dies of a flash memory device
|
US8472280B2
(en)
|
2010-12-21 |
2013-06-25 |
Sandisk Technologies Inc. |
Alternate page by page programming scheme
|
US10079068B2
(en)
|
2011-02-23 |
2018-09-18 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Devices and method for wear estimation based memory management
|
US8693258B2
(en)
|
2011-03-17 |
2014-04-08 |
Densbits Technologies Ltd. |
Obtaining soft information using a hard interface
|
US8990665B1
(en)
|
2011-04-06 |
2015-03-24 |
Densbits Technologies Ltd. |
System, method and computer program product for joint search of a read threshold and soft decoding
|
US9337872B2
(en)
|
2011-04-30 |
2016-05-10 |
Rambus Inc. |
Configurable, error-tolerant memory control
|
US8379454B2
(en)
|
2011-05-05 |
2013-02-19 |
Sandisk Technologies Inc. |
Detection of broken word-lines in memory arrays
|
US9396106B2
(en)
|
2011-05-12 |
2016-07-19 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Advanced management of a non-volatile memory
|
US9195592B1
(en)
|
2011-05-12 |
2015-11-24 |
Densbits Technologies Ltd. |
Advanced management of a non-volatile memory
|
US9110785B1
(en)
|
2011-05-12 |
2015-08-18 |
Densbits Technologies Ltd. |
Ordered merge of data sectors that belong to memory space portions
|
US8996790B1
(en)
|
2011-05-12 |
2015-03-31 |
Densbits Technologies Ltd. |
System and method for flash memory management
|
US9372792B1
(en)
|
2011-05-12 |
2016-06-21 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Advanced management of a non-volatile memory
|
US9501392B1
(en)
|
2011-05-12 |
2016-11-22 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Management of a non-volatile memory module
|
US8667211B2
(en)
|
2011-06-01 |
2014-03-04 |
Densbits Technologies Ltd. |
System and method for managing a non-volatile memory
|
US8456911B2
(en)
|
2011-06-07 |
2013-06-04 |
Sandisk Technologies Inc. |
Intelligent shifting of read pass voltages for non-volatile storage
|
US8775901B2
(en)
|
2011-07-28 |
2014-07-08 |
SanDisk Technologies, Inc. |
Data recovery for defective word lines during programming of non-volatile memory arrays
|
US8750042B2
(en)
|
2011-07-28 |
2014-06-10 |
Sandisk Technologies Inc. |
Combined simultaneous sensing of multiple wordlines in a post-write read (PWR) and detection of NAND failures
|
US8726104B2
(en)
|
2011-07-28 |
2014-05-13 |
Sandisk Technologies Inc. |
Non-volatile memory and method with accelerated post-write read using combined verification of multiple pages
|
US8588003B1
(en)
|
2011-08-01 |
2013-11-19 |
Densbits Technologies Ltd. |
System, method and computer program product for programming and for recovering from a power failure
|
US8553468B2
(en)
|
2011-09-21 |
2013-10-08 |
Densbits Technologies Ltd. |
System and method for managing erase operations in a non-volatile memory
|
CN102509557B
(zh)
*
|
2011-11-04 |
2014-10-15 |
珠海天威技术开发有限公司 |
电可擦可编程只读存储器的数据擦写控制装置及方法、芯片及其数据写入方法、耗材容器
|
US8947941B2
(en)
|
2012-02-09 |
2015-02-03 |
Densbits Technologies Ltd. |
State responsive operations relating to flash memory cells
|
US8996788B2
(en)
|
2012-02-09 |
2015-03-31 |
Densbits Technologies Ltd. |
Configurable flash interface
|
US8730722B2
(en)
|
2012-03-02 |
2014-05-20 |
Sandisk Technologies Inc. |
Saving of data in cases of word-line to word-line short in memory arrays
|
WO2013134890A1
(en)
*
|
2012-03-13 |
2013-09-19 |
Micron Technology, Inc. |
Nonconsecutive sensing of multilevel memory cells
|
US8996793B1
(en)
|
2012-04-24 |
2015-03-31 |
Densbits Technologies Ltd. |
System, method and computer readable medium for generating soft information
|
US8838937B1
(en)
|
2012-05-23 |
2014-09-16 |
Densbits Technologies Ltd. |
Methods, systems and computer readable medium for writing and reading data
|
US8879325B1
(en)
|
2012-05-30 |
2014-11-04 |
Densbits Technologies Ltd. |
System, method and computer program product for processing read threshold information and for reading a flash memory module
|
US8566671B1
(en)
|
2012-06-29 |
2013-10-22 |
Sandisk Technologies Inc. |
Configurable accelerated post-write read to manage errors
|
US9921954B1
(en)
|
2012-08-27 |
2018-03-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Method and system for split flash memory management between host and storage controller
|
US9368225B1
(en)
|
2012-11-21 |
2016-06-14 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Determining read thresholds based upon read error direction statistics
|
CN103001956A
(zh)
*
|
2012-11-23 |
2013-03-27 |
杭州也要买电子商务有限公司 |
一种对系统读操作请求进行权限验证的方法
|
US9069659B1
(en)
|
2013-01-03 |
2015-06-30 |
Densbits Technologies Ltd. |
Read threshold determination using reference read threshold
|
US9076530B2
(en)
|
2013-02-07 |
2015-07-07 |
Seagate Technology Llc |
Non-volatile write buffer data retention pending scheduled verification
|
US9552296B2
(en)
*
|
2013-03-15 |
2017-01-24 |
International Business Machines Corporation |
Verifying shared memory integrity
|
US9250995B2
(en)
*
|
2013-05-29 |
2016-02-02 |
Seagate Technology Llc |
Protection of data in memory
|
US9136876B1
(en)
|
2013-06-13 |
2015-09-15 |
Densbits Technologies Ltd. |
Size limited multi-dimensional decoding
|
CN103345610B
(zh)
*
|
2013-06-20 |
2015-09-23 |
武汉天喻信息产业股份有限公司 |
快速验证智能卡数据完整性的设备及方法
|
US20150006784A1
(en)
*
|
2013-06-27 |
2015-01-01 |
Sandisk Technologies Inc. |
Efficient Post Write Read in Three Dimensional Nonvolatile Memory
|
US9063671B2
(en)
|
2013-07-02 |
2015-06-23 |
Sandisk Technologies Inc. |
Write operations with full sequence programming for defect management in nonvolatile memory
|
US9218242B2
(en)
*
|
2013-07-02 |
2015-12-22 |
Sandisk Technologies Inc. |
Write operations for defect management in nonvolatile memory
|
US9165683B2
(en)
|
2013-09-23 |
2015-10-20 |
Sandisk Technologies Inc. |
Multi-word line erratic programming detection
|
US9413491B1
(en)
|
2013-10-08 |
2016-08-09 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
System and method for multiple dimension decoding and encoding a message
|
US9786388B1
(en)
|
2013-10-09 |
2017-10-10 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Detecting and managing bad columns
|
US9397706B1
(en)
|
2013-10-09 |
2016-07-19 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
System and method for irregular multiple dimension decoding and encoding
|
US9348694B1
(en)
|
2013-10-09 |
2016-05-24 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Detecting and managing bad columns
|
US9043537B1
(en)
|
2013-11-21 |
2015-05-26 |
Sandisk Technologies Inc. |
Update block programming order
|
KR102140784B1
(ko)
*
|
2013-12-03 |
2020-08-03 |
삼성전자주식회사 |
비휘발성 메모리 장치의 데이터 기록 방법
|
US9213601B2
(en)
|
2013-12-03 |
2015-12-15 |
Sandisk Technologies Inc. |
Adaptive data re-compaction after post-write read verification operations
|
US9058881B1
(en)
|
2013-12-05 |
2015-06-16 |
Sandisk Technologies Inc. |
Systems and methods for partial page programming of multi level cells
|
US9244631B2
(en)
|
2013-12-06 |
2016-01-26 |
Sandisk Technologies Inc. |
Lower page only host burst writes
|
US9239756B2
(en)
*
|
2013-12-13 |
2016-01-19 |
Sandisk Technologies Inc. |
Systems and methods for performing data recovery in a memory system
|
DE102014101945A1
(de)
*
|
2013-12-23 |
2015-06-25 |
Endress + Hauser Gmbh + Co. Kg |
Messumformer mit Überwachungsfunktion
|
US9208023B2
(en)
*
|
2013-12-23 |
2015-12-08 |
Sandisk Technologies Inc. |
Systems and methods for scheduling post-write read in nonvolatile memory
|
US9536612B1
(en)
|
2014-01-23 |
2017-01-03 |
Avago Technologies General Ip (Singapore) Pte. Ltd |
Digital signaling processing for three dimensional flash memory arrays
|
US10120792B1
(en)
|
2014-01-29 |
2018-11-06 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Programming an embedded flash storage device
|
US8902652B1
(en)
|
2014-05-13 |
2014-12-02 |
Sandisk Technologies Inc. |
Systems and methods for lower page writes
|
US8886877B1
(en)
|
2014-05-15 |
2014-11-11 |
Sandisk Technologies Inc. |
In-situ block folding for nonvolatile memory
|
US9542262B1
(en)
|
2014-05-29 |
2017-01-10 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Error correction
|
US9892033B1
(en)
|
2014-06-24 |
2018-02-13 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Management of memory units
|
US9972393B1
(en)
|
2014-07-03 |
2018-05-15 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Accelerating programming of a flash memory module
|
US9584159B1
(en)
|
2014-07-03 |
2017-02-28 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Interleaved encoding
|
US9449702B1
(en)
|
2014-07-08 |
2016-09-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Power management
|
US9484086B2
(en)
|
2014-07-10 |
2016-11-01 |
Sandisk Technologies Llc |
Determination of word line to local source line shorts
|
US9443612B2
(en)
|
2014-07-10 |
2016-09-13 |
Sandisk Technologies Llc |
Determination of bit line to low voltage signal shorts
|
US9514835B2
(en)
|
2014-07-10 |
2016-12-06 |
Sandisk Technologies Llc |
Determination of word line to word line shorts between adjacent blocks
|
US9460809B2
(en)
|
2014-07-10 |
2016-10-04 |
Sandisk Technologies Llc |
AC stress mode to screen out word line to word line shorts
|
US9202593B1
(en)
|
2014-09-02 |
2015-12-01 |
Sandisk Technologies Inc. |
Techniques for detecting broken word lines in non-volatile memories
|
US9240249B1
(en)
|
2014-09-02 |
2016-01-19 |
Sandisk Technologies Inc. |
AC stress methods to screen out bit line defects
|
US9449694B2
(en)
|
2014-09-04 |
2016-09-20 |
Sandisk Technologies Llc |
Non-volatile memory with multi-word line select for defect detection operations
|
US9524211B1
(en)
|
2014-11-18 |
2016-12-20 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Codeword management
|
US10305515B1
(en)
|
2015-02-02 |
2019-05-28 |
Avago Technologies International Sales Pte. Limited |
System and method for encoding using multiple linear feedback shift registers
|
KR102292217B1
(ko)
|
2015-02-06 |
2021-08-24 |
삼성전자주식회사 |
내부적으로 데이터 읽기 검증을 수행할 수 있는 메모리 장치, 이의 작동 방법, 및 이를 포함하는 메모리 시스템
|
CN106158030B
(zh)
*
|
2015-04-28 |
2019-09-24 |
旺宏电子股份有限公司 |
对存储器装置编程的方法以及相关的存储器装置
|
KR20170140225A
(ko)
*
|
2015-04-30 |
2017-12-20 |
마이크로칩 테크놀로지 인코포레이티드 |
향상된 명령어 세트를 구비한 중앙 처리 유닛
|
US10628255B1
(en)
|
2015-06-11 |
2020-04-21 |
Avago Technologies International Sales Pte. Limited |
Multi-dimensional decoding
|
JP6359491B2
(ja)
*
|
2015-06-12 |
2018-07-18 |
東芝メモリ株式会社 |
半導体記憶装置
|
US9851921B1
(en)
|
2015-07-05 |
2017-12-26 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Flash memory chip processing
|
US9659666B2
(en)
|
2015-08-31 |
2017-05-23 |
Sandisk Technologies Llc |
Dynamic memory recovery at the sub-block level
|
US9619321B1
(en)
|
2015-10-08 |
2017-04-11 |
Seagate Technology Llc |
Internal copy-back with read-verify
|
US9858009B2
(en)
|
2015-10-26 |
2018-01-02 |
Sandisk Technologies Llc |
Data folding in 3D nonvolatile memory
|
CN105389239A
(zh)
*
|
2015-12-10 |
2016-03-09 |
浪潮电子信息产业股份有限公司 |
天梭k1系统路由模块寄存器信息自动校验方法
|
US9954558B1
(en)
|
2016-03-03 |
2018-04-24 |
Avago Technologies General Ip (Singapore) Pte. Ltd. |
Fast decoding of data stored in a flash memory
|
US9996280B2
(en)
*
|
2016-03-15 |
2018-06-12 |
Sandisk Technologies Llc |
Data register copying for non-volatile storage array operations
|
US9952775B2
(en)
*
|
2016-08-11 |
2018-04-24 |
SK Hynix Inc. |
Unusable column mapping in flash memory devices
|
TWI708253B
(zh)
*
|
2018-11-16 |
2020-10-21 |
力旺電子股份有限公司 |
非揮發性記憶體良率提升的設計暨測試方法
|
KR20200087557A
(ko)
|
2019-01-11 |
2020-07-21 |
주식회사 엘지화학 |
에러 복구 방법, 이를 이용한 마이크로 컨트롤러 유닛, 및 상기 마이크로 컨트롤러를 포함하는 배터리 장치
|
CN110235111B
(zh)
*
|
2019-04-30 |
2020-06-26 |
长江存储科技有限责任公司 |
电子设备和管理闪存的读取电平的方法
|
US11556416B2
(en)
|
2021-05-05 |
2023-01-17 |
Apple Inc. |
Controlling memory readout reliability and throughput by adjusting distance between read thresholds
|
US11847342B2
(en)
|
2021-07-28 |
2023-12-19 |
Apple Inc. |
Efficient transfer of hard data and confidence levels in reading a nonvolatile memory
|