DE60122656D1 - DRAM Speicherzelle mit Grabenkondensator und vertikalem Transistor - Google Patents

DRAM Speicherzelle mit Grabenkondensator und vertikalem Transistor

Info

Publication number
DE60122656D1
DE60122656D1 DE60122656T DE60122656T DE60122656D1 DE 60122656 D1 DE60122656 D1 DE 60122656D1 DE 60122656 T DE60122656 T DE 60122656T DE 60122656 T DE60122656 T DE 60122656T DE 60122656 D1 DE60122656 D1 DE 60122656D1
Authority
DE
Germany
Prior art keywords
memory cell
dram memory
vertical transistor
trench capacitor
trench
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60122656T
Other languages
English (en)
Other versions
DE60122656T2 (de
Inventor
Takashi Yamada
Takeshi Kajiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60122656D1 publication Critical patent/DE60122656D1/de
Publication of DE60122656T2 publication Critical patent/DE60122656T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0383—Making the capacitor or connections thereto the capacitor being in a trench in the substrate wherein the transistor is vertical
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H10B12/395—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench the transistor being vertical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H10B12/0385—Making a connection between the transistor and the capacitor, e.g. buried strap
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/488—Word lines
DE60122656T 2000-12-06 2001-11-21 DRAM Speicherzelle mit Grabenkondensator und vertikalem Transistor Expired - Lifetime DE60122656T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000371106 2000-12-06
JP2000371106A JP3808700B2 (ja) 2000-12-06 2000-12-06 半導体装置及びその製造方法

Publications (2)

Publication Number Publication Date
DE60122656D1 true DE60122656D1 (de) 2006-10-12
DE60122656T2 DE60122656T2 (de) 2007-08-30

Family

ID=18840883

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60122656T Expired - Lifetime DE60122656T2 (de) 2000-12-06 2001-11-21 DRAM Speicherzelle mit Grabenkondensator und vertikalem Transistor

Country Status (7)

Country Link
US (1) US6906372B2 (de)
EP (1) EP1213761B1 (de)
JP (1) JP3808700B2 (de)
KR (1) KR100497918B1 (de)
CN (1) CN1174493C (de)
DE (1) DE60122656T2 (de)
TW (1) TW527701B (de)

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Also Published As

Publication number Publication date
EP1213761A1 (de) 2002-06-12
CN1174493C (zh) 2004-11-03
US6906372B2 (en) 2005-06-14
US20020076880A1 (en) 2002-06-20
JP2002176154A (ja) 2002-06-21
EP1213761B1 (de) 2006-08-30
DE60122656T2 (de) 2007-08-30
KR100497918B1 (ko) 2005-06-29
KR20020045540A (ko) 2002-06-19
CN1357924A (zh) 2002-07-10
JP3808700B2 (ja) 2006-08-16
TW527701B (en) 2003-04-11

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