DE60102028D1 - Polysiloxan, Verfahren zur Herstellung, Silicium-haltige alicyclische Verbindung, und strahlungsempfindliche Harzverbindungen - Google Patents

Polysiloxan, Verfahren zur Herstellung, Silicium-haltige alicyclische Verbindung, und strahlungsempfindliche Harzverbindungen

Info

Publication number
DE60102028D1
DE60102028D1 DE60102028T DE60102028T DE60102028D1 DE 60102028 D1 DE60102028 D1 DE 60102028D1 DE 60102028 T DE60102028 T DE 60102028T DE 60102028 T DE60102028 T DE 60102028T DE 60102028 D1 DE60102028 D1 DE 60102028D1
Authority
DE
Germany
Prior art keywords
polysiloxane
radiation
silicon
manufacturing process
sensitive resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60102028T
Other languages
English (en)
Other versions
DE60102028T2 (de
Inventor
Haruo Iwasawa
Tsutomu Shimokawa
Hayashi Akihiro
Satoru Nishiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
JSR Corp
Original Assignee
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2000107207A external-priority patent/JP2001288268A/ja
Priority claimed from JP2000291089A external-priority patent/JP2002105086A/ja
Priority claimed from JP2000318752A external-priority patent/JP4419311B2/ja
Application filed by JSR Corp filed Critical JSR Corp
Application granted granted Critical
Publication of DE60102028D1 publication Critical patent/DE60102028D1/de
Publication of DE60102028T2 publication Critical patent/DE60102028T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/42—Block-or graft-polymers containing polysiloxane sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
    • C07F7/02—Silicon compounds
    • C07F7/08—Compounds having one or more C—Si linkages
    • C07F7/0834—Compounds having one or more O-Si linkage
    • C07F7/0838—Compounds with one or more Si-O-Si sequences
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/22—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen
    • C08G77/24—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen and oxygen halogen-containing groups
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C08L83/06—Polysiloxanes containing silicon bound to oxygen-containing groups
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Silicon Polymers (AREA)
  • Materials For Photolithography (AREA)
DE60102028T 2000-04-07 2001-04-05 Polysiloxan, Verfahren zur Herstellung, Silicium-haltige alicyclische Verbindung, und strahlungsempfindliche Harzverbindungen Expired - Lifetime DE60102028T2 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2000107207 2000-04-07
JP2000107207A JP2001288268A (ja) 2000-04-07 2000-04-07 共重合ポリシロキサンおよび感放射線性樹脂組成物
JP2000291089A JP2002105086A (ja) 2000-09-25 2000-09-25 ケイ素含有脂環式化合物
JP2000291089 2000-09-25
JP2000318752 2000-10-19
JP2000318752A JP4419311B2 (ja) 2000-10-19 2000-10-19 ケイ素含有脂環式化合物

Publications (2)

Publication Number Publication Date
DE60102028D1 true DE60102028D1 (de) 2004-03-25
DE60102028T2 DE60102028T2 (de) 2004-06-24

Family

ID=27343034

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60102028T Expired - Lifetime DE60102028T2 (de) 2000-04-07 2001-04-05 Polysiloxan, Verfahren zur Herstellung, Silicium-haltige alicyclische Verbindung, und strahlungsempfindliche Harzverbindungen

Country Status (5)

Country Link
US (2) US6531260B2 (de)
EP (1) EP1142928B1 (de)
KR (2) KR100744926B1 (de)
DE (1) DE60102028T2 (de)
TW (1) TW588071B (de)

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TWI314943B (en) * 2002-08-29 2009-09-21 Radiation-sensitive resin composition
JP3937996B2 (ja) * 2002-10-08 2007-06-27 Ｊｓｒ株式会社 感放射性樹脂組成物
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US7041748B2 (en) * 2003-01-08 2006-05-09 International Business Machines Corporation Patternable low dielectric constant materials and their use in ULSI interconnection
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WO2005007747A2 (en) 2003-07-03 2005-01-27 Dow Corning Corporation Photosensitive silsesquioxane resin
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WO2005037846A1 (ja) * 2003-10-15 2005-04-28 Jsr Corporation シラン化合物、ポリシロキサンおよび感放射線性樹脂組成物
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JP5136777B2 (ja) * 2008-04-25 2013-02-06 信越化学工業株式会社 ポリオルガノシロキサン化合物、これを含む樹脂組成物及びこれらのパターン形成方法
JP5654479B2 (ja) 2008-12-10 2015-01-14 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ 切り替え可能な反射防止膜
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KR20200037295A (ko) 2017-07-28 2020-04-08 다우 실리콘즈 코포레이션 포지티브 포토레지스트 특징과 네거티브 포토레지스트 특징 둘 모두를 갖는 실세스퀴옥산 조성물
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Also Published As

Publication number Publication date
DE60102028T2 (de) 2004-06-24
US20030191268A1 (en) 2003-10-09
EP1142928B1 (de) 2004-02-18
US6531260B2 (en) 2003-03-11
US20010041769A1 (en) 2001-11-15
US6846895B2 (en) 2005-01-25
KR20010090772A (ko) 2001-10-19
TW588071B (en) 2004-05-21
EP1142928A1 (de) 2001-10-10
KR100744926B1 (ko) 2007-08-01
KR20010090760A (ko) 2001-10-19

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