DE60028034D1 - Elektrode und herstellungsmethode für eine elektrode - Google Patents

Elektrode und herstellungsmethode für eine elektrode

Info

Publication number
DE60028034D1
DE60028034D1 DE60028034T DE60028034T DE60028034D1 DE 60028034 D1 DE60028034 D1 DE 60028034D1 DE 60028034 T DE60028034 T DE 60028034T DE 60028034 T DE60028034 T DE 60028034T DE 60028034 D1 DE60028034 D1 DE 60028034D1
Authority
DE
Germany
Prior art keywords
electrode
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60028034T
Other languages
English (en)
Other versions
DE60028034T2 (de
Inventor
Mitsuaki Komino
Hideaki Amano
Shosuke Endo
Toshiaki Fujisato
Yasuharu Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE60028034D1 publication Critical patent/DE60028034D1/de
Publication of DE60028034T2 publication Critical patent/DE60028034T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
DE60028034T 1999-04-06 2000-04-06 Elektrode und herstellungsmethode für eine elektrode Expired - Fee Related DE60028034T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9935399 1999-04-06
JP9935399 1999-04-06
PCT/JP2000/002228 WO2000060658A1 (fr) 1999-04-06 2000-04-06 Electrode, etage de tranche, dispositif a plasma, et procede de fabrication d'une electrode et d'un etage de tranche

Publications (2)

Publication Number Publication Date
DE60028034D1 true DE60028034D1 (de) 2006-06-22
DE60028034T2 DE60028034T2 (de) 2006-10-05

Family

ID=14245252

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60028034T Expired - Fee Related DE60028034T2 (de) 1999-04-06 2000-04-06 Elektrode und herstellungsmethode für eine elektrode

Country Status (7)

Country Link
US (1) US7337745B1 (de)
EP (1) EP1193751B1 (de)
JP (1) JP3725430B2 (de)
KR (1) KR100476845B1 (de)
DE (1) DE60028034T2 (de)
TW (1) TW492075B (de)
WO (1) WO2000060658A1 (de)

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US8748773B2 (en) * 2007-03-30 2014-06-10 Ati Properties, Inc. Ion plasma electron emitters for a melting furnace
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WO2008128080A2 (en) * 2007-04-13 2008-10-23 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic dissipative stage for use in forming lcd products
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
JP5057904B2 (ja) * 2007-09-07 2012-10-24 株式会社日本セラテック 温調プレートおよびその製造方法
US7798199B2 (en) 2007-12-04 2010-09-21 Ati Properties, Inc. Casting apparatus and method
SG187387A1 (en) 2007-12-19 2013-02-28 Lam Res Corp Film adhesive for semiconductor vacuum processing apparatus
WO2009085163A1 (en) * 2007-12-19 2009-07-09 Lam Research Corporation A composite showerhead electrode assembly for a plasma processing apparatus
JP5315942B2 (ja) * 2008-05-21 2013-10-16 東京エレクトロン株式会社 載置台機構、これを用いたプラズマ処理装置及び静電チャックへの電圧印加方法
JP2011225949A (ja) * 2010-04-21 2011-11-10 Ibiden Co Ltd 炭素部品および炭素部品の製造方法
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JP2013008949A (ja) * 2011-05-26 2013-01-10 Hitachi Kokusai Electric Inc 基板載置台、基板処理装置及び半導体装置の製造方法
KR101295794B1 (ko) * 2011-05-31 2013-08-09 세메스 주식회사 기판 처리 장치
US10224182B2 (en) 2011-10-17 2019-03-05 Novellus Systems, Inc. Mechanical suppression of parasitic plasma in substrate processing chamber
US9673077B2 (en) 2012-07-03 2017-06-06 Watlow Electric Manufacturing Company Pedestal construction with low coefficient of thermal expansion top
US9224626B2 (en) 2012-07-03 2015-12-29 Watlow Electric Manufacturing Company Composite substrate for layered heaters
US9449795B2 (en) * 2013-02-28 2016-09-20 Novellus Systems, Inc. Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor
JP6250949B2 (ja) * 2013-04-15 2017-12-20 日本特殊陶業株式会社 半導体製造装置用部品及びその製造方法
US20150097328A1 (en) * 2013-10-08 2015-04-09 Win Semiconductors Corp. Wafer holding structure
JP2015095409A (ja) * 2013-11-13 2015-05-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP6030589B2 (ja) * 2014-02-13 2016-11-24 株式会社アルバック ハードマスク形成方法及びハードマスク形成装置
DE102014116991A1 (de) * 2014-11-20 2016-05-25 Aixtron Se CVD- oder PVD-Reaktor zum Beschichten großflächiger Substrate
US9909197B2 (en) * 2014-12-22 2018-03-06 Semes Co., Ltd. Supporting unit and substrate treating apparatus including the same
WO2016153582A1 (en) * 2015-03-20 2016-09-29 Applied Materials, Inc. Ceramic electrostatic chuck bonded with high temperature polymer bond to metal base
DE102017202762B4 (de) * 2017-02-21 2018-12-20 Schott Ag Verfahren zur Herstellung eines Glasrohres mit einem von einer Kreisform abweichenden Querschnitt durch Umformen sowie Verwendung des Verfahrens
US11598003B2 (en) 2017-09-12 2023-03-07 Applied Materials, Inc. Substrate processing chamber having heated showerhead assembly
KR102176972B1 (ko) * 2017-11-10 2020-11-10 시바우라 메카트로닉스 가부시끼가이샤 성막 장치 및 부품 박리 장치
CN111383885B (zh) * 2018-12-27 2023-03-31 中微半导体设备(上海)股份有限公司 一种能提高控温精度的基片安装台及等离子体处理设备
CN111383882B (zh) * 2018-12-27 2023-03-10 中微半导体设备(上海)股份有限公司 等离子体处理装置及用于该处理装置的基片支座
CN112133621B (zh) * 2019-06-25 2023-09-29 中微半导体设备(上海)股份有限公司 一种导热片和等离子体处理装置

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Also Published As

Publication number Publication date
US7337745B1 (en) 2008-03-04
EP1193751B1 (de) 2006-05-17
DE60028034T2 (de) 2006-10-05
KR20010105389A (ko) 2001-11-28
WO2000060658A1 (fr) 2000-10-12
TW492075B (en) 2002-06-21
JP3725430B2 (ja) 2005-12-14
KR100476845B1 (ko) 2005-03-17
EP1193751A4 (de) 2005-02-09
EP1193751A1 (de) 2002-04-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee