DE4446998C2 - Halbleiterspeichereinrichtung - Google Patents

Halbleiterspeichereinrichtung

Info

Publication number
DE4446998C2
DE4446998C2 DE4446998A DE4446998A DE4446998C2 DE 4446998 C2 DE4446998 C2 DE 4446998C2 DE 4446998 A DE4446998 A DE 4446998A DE 4446998 A DE4446998 A DE 4446998A DE 4446998 C2 DE4446998 C2 DE 4446998C2
Authority
DE
Germany
Prior art keywords
data
memory cells
lines
control gate
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4446998A
Other languages
German (de)
English (en)
Other versions
DE4446998A1 (de
Inventor
Koji Sakui
Hiroshi Nakamura
Tomoharu Tanaka
Masaki Momodomi
Fujio Masuoka
Kazunori Ohuchi
Tetsuo Endoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE4446998A1 publication Critical patent/DE4446998A1/de
Application granted granted Critical
Publication of DE4446998C2 publication Critical patent/DE4446998C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Dram (AREA)
DE4446998A 1993-12-28 1994-12-28 Halbleiterspeichereinrichtung Expired - Lifetime DE4446998C2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35421593 1993-12-28
JP19884194A JPH07235193A (ja) 1993-12-28 1994-08-23 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE4446998A1 DE4446998A1 (de) 1995-06-29
DE4446998C2 true DE4446998C2 (de) 2001-02-22

Family

ID=26511203

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4446998A Expired - Lifetime DE4446998C2 (de) 1993-12-28 1994-12-28 Halbleiterspeichereinrichtung

Country Status (5)

Country Link
US (1) US5523980A (cs)
JP (1) JPH07235193A (cs)
KR (1) KR0147444B1 (cs)
DE (1) DE4446998C2 (cs)
TW (1) TW273621B (cs)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0697702B1 (en) * 1994-08-19 2003-01-15 Kabushiki Kaisha Toshiba Semiconductor memory device and high-voltage switching circuit
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
JP3967409B2 (ja) * 1996-12-26 2007-08-29 株式会社東芝 半導体集積回路装置
JP3489958B2 (ja) * 1997-03-19 2004-01-26 富士通株式会社 不揮発性半導体記憶装置
US5847994A (en) * 1997-09-08 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device having a back ground operation mode
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
JP2001006379A (ja) 1999-06-16 2001-01-12 Fujitsu Ltd 複写、移動機能を有するフラッシュメモリ
US7102671B1 (en) 2000-02-08 2006-09-05 Lexar Media, Inc. Enhanced compact flash memory card
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
JP2002093192A (ja) * 2000-09-18 2002-03-29 Mitsubishi Electric Corp 半導体記憶装置の試験方法
JP4503809B2 (ja) * 2000-10-31 2010-07-14 株式会社東芝 半導体記憶装置
US6621755B2 (en) * 2001-08-30 2003-09-16 Micron Technology, Inc. Testmode to increase acceleration in burn-in
GB0123419D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Data handling system
GB0123417D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
US6950918B1 (en) 2002-01-18 2005-09-27 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6957295B1 (en) 2002-01-18 2005-10-18 Lexar Media, Inc. File management of one-time-programmable nonvolatile memory devices
US6871257B2 (en) 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
JP4156985B2 (ja) * 2003-06-30 2008-09-24 株式会社東芝 半導体記憶装置
US6933557B2 (en) * 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
WO2005059854A2 (en) 2003-12-17 2005-06-30 Lexar Media, Inc. Electronic equipment point-of-sale activation to avoid theft
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7307884B2 (en) * 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
KR100632946B1 (ko) * 2004-07-13 2006-10-12 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
EP1626413B1 (en) * 2004-08-11 2007-02-21 STMicroelectronics S.r.l. A row decoder for nand memoiries
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
JP4709523B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
US7639540B2 (en) 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
KR100888482B1 (ko) * 2007-05-11 2009-03-12 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법
US9093158B2 (en) * 2013-12-06 2015-07-28 Sandisk Technologies Inc. Write scheme for charge trapping memory
JP2017168155A (ja) * 2016-03-14 2017-09-21 東芝メモリ株式会社 半導体記憶装置
JP2018147535A (ja) * 2017-03-07 2018-09-20 東芝メモリ株式会社 半導体記憶装置及びメモリシステム
US11043823B2 (en) * 2017-04-06 2021-06-22 Tesla, Inc. System and method for facilitating conditioning and testing of rechargeable battery cells
US10402116B2 (en) * 2017-12-11 2019-09-03 Micron Technology, Inc. Systems and methods for writing zeros to a memory array
JP7313444B2 (ja) * 2018-12-07 2023-07-24 長江存儲科技有限責任公司 メモリシステムをプログラムするための方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342103A (en) * 1979-07-27 1982-07-27 Fujitsu Limited Address buffer circuit
DE3637682A1 (de) * 1985-11-13 1987-05-14 Mitsubishi Electric Corp Prueffaehiger, nicht-fluechtiger halbleiterspeicher mit variablem schwellenwert
DE4315714A1 (de) * 1992-05-12 1993-11-18 Mitsubishi Electric Corp Halbleiterspeichereinrichtung mit Flash-Schreibeigenschaften und Flash-Schreibverfahren

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109701B2 (ja) * 1987-11-30 1995-11-22 株式会社東芝 キャッシュメモリ
JPH0233799A (ja) * 1988-07-22 1990-02-02 Toshiba Corp 半導体記録装置のデコード方法およびその装置
JPH02141993A (ja) * 1988-11-21 1990-05-31 Toshiba Corp 半導体記憶装置
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4342103A (en) * 1979-07-27 1982-07-27 Fujitsu Limited Address buffer circuit
DE3637682A1 (de) * 1985-11-13 1987-05-14 Mitsubishi Electric Corp Prueffaehiger, nicht-fluechtiger halbleiterspeicher mit variablem schwellenwert
DE4315714A1 (de) * 1992-05-12 1993-11-18 Mitsubishi Electric Corp Halbleiterspeichereinrichtung mit Flash-Schreibeigenschaften und Flash-Schreibverfahren

Also Published As

Publication number Publication date
DE4446998A1 (de) 1995-06-29
KR0147444B1 (ko) 1998-11-02
TW273621B (cs) 1996-04-01
KR950020748A (ko) 1995-07-24
JPH07235193A (ja) 1995-09-05
US5523980A (en) 1996-06-04

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
R071 Expiry of right
R071 Expiry of right