TW273621B - - Google Patents

Info

Publication number
TW273621B
TW273621B TW084100526A TW84100526A TW273621B TW 273621 B TW273621 B TW 273621B TW 084100526 A TW084100526 A TW 084100526A TW 84100526 A TW84100526 A TW 84100526A TW 273621 B TW273621 B TW 273621B
Authority
TW
Taiwan
Application number
TW084100526A
Inventor
Tetsuo Endoh
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW273621B publication Critical patent/TW273621B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
TW084100526A 1993-12-28 1995-01-21 TW273621B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP35421593 1993-12-28
JP19884194A JPH07235193A (ja) 1993-12-28 1994-08-23 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW273621B true TW273621B (zh) 1996-04-01

Family

ID=26511203

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084100526A TW273621B (zh) 1993-12-28 1995-01-21

Country Status (5)

Country Link
US (1) US5523980A (zh)
JP (1) JPH07235193A (zh)
KR (1) KR0147444B1 (zh)
DE (1) DE4446998C2 (zh)
TW (1) TW273621B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622996B (zh) * 2017-03-07 2018-05-01 Toshiba Memory Corp Semiconductor memory device and memory system

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* Cited by examiner, † Cited by third party
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DE69529367T2 (de) * 1994-08-19 2004-01-22 Kabushiki Kaisha Toshiba, Kawasaki Halbleiterspeicheranordnung und hochspannungsschaltende Schaltung
US6728851B1 (en) 1995-07-31 2004-04-27 Lexar Media, Inc. Increasing the memory performance of flash memory devices by writing sectors simultaneously to multiple flash memory devices
US6978342B1 (en) 1995-07-31 2005-12-20 Lexar Media, Inc. Moving sectors within a block of information in a flash memory mass storage architecture
US5845313A (en) 1995-07-31 1998-12-01 Lexar Direct logical block addressing flash memory mass storage architecture
US8171203B2 (en) 1995-07-31 2012-05-01 Micron Technology, Inc. Faster write operations to nonvolatile memory using FSInfo sector manipulation
JP3967409B2 (ja) * 1996-12-26 2007-08-29 株式会社東芝 半導体集積回路装置
JP3489958B2 (ja) * 1997-03-19 2004-01-26 富士通株式会社 不揮発性半導体記憶装置
US5847994A (en) * 1997-09-08 1998-12-08 Mitsubishi Denki Kabushiki Kaisha Non-volatile semiconductor memory device having a back ground operation mode
JP3999900B2 (ja) * 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
JP2001006379A (ja) 1999-06-16 2001-01-12 Fujitsu Ltd 複写、移動機能を有するフラッシュメモリ
US7167944B1 (en) 2000-07-21 2007-01-23 Lexar Media, Inc. Block management for mass storage
JP2002093192A (ja) * 2000-09-18 2002-03-29 Mitsubishi Electric Corp 半導体記憶装置の試験方法
JP4503809B2 (ja) * 2000-10-31 2010-07-14 株式会社東芝 半導体記憶装置
US6621755B2 (en) * 2001-08-30 2003-09-16 Micron Technology, Inc. Testmode to increase acceleration in burn-in
GB0123421D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Power management system
GB0123417D0 (en) * 2001-09-28 2001-11-21 Memquest Ltd Improved data processing
GB0123416D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Non-volatile memory control
GB0123410D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Memory system for data storage and retrieval
GB0123415D0 (en) 2001-09-28 2001-11-21 Memquest Ltd Method of writing data to non-volatile memory
US7231643B1 (en) 2002-02-22 2007-06-12 Lexar Media, Inc. Image rescue system including direct communication between an application program and a device driver
US6871257B2 (en) * 2002-02-22 2005-03-22 Sandisk Corporation Pipelined parallel programming operation in a non-volatile memory system
US6973519B1 (en) 2003-06-03 2005-12-06 Lexar Media, Inc. Card identification compatibility
JP4156985B2 (ja) * 2003-06-30 2008-09-24 株式会社東芝 半導体記憶装置
US6933557B2 (en) * 2003-08-11 2005-08-23 Atmel Corporation Fowler-Nordheim block alterable EEPROM memory cell
US7725628B1 (en) 2004-04-20 2010-05-25 Lexar Media, Inc. Direct secondary device interface by a host
US7370166B1 (en) 2004-04-30 2008-05-06 Lexar Media, Inc. Secure portable storage device
US7307884B2 (en) * 2004-06-15 2007-12-11 Sandisk Corporation Concurrent programming of non-volatile memory
KR100632946B1 (ko) * 2004-07-13 2006-10-12 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 프로그램 방법
EP1626413B1 (en) 2004-08-11 2007-02-21 STMicroelectronics S.r.l. A row decoder for nand memoiries
US7594063B1 (en) 2004-08-27 2009-09-22 Lexar Media, Inc. Storage capacity status
US7464306B1 (en) 2004-08-27 2008-12-09 Lexar Media, Inc. Status of overall health of nonvolatile memory
JP4709523B2 (ja) * 2004-10-14 2011-06-22 株式会社東芝 不揮発性半導体記憶装置
US7639540B2 (en) * 2007-02-16 2009-12-29 Mosaid Technologies Incorporated Non-volatile semiconductor memory having multiple external power supplies
KR100888482B1 (ko) * 2007-05-11 2009-03-12 삼성전자주식회사 비휘발성 반도체 메모리 장치 및 상기 비휘발성 반도체메모리 장치의 쓰기 방법
US9093158B2 (en) * 2013-12-06 2015-07-28 Sandisk Technologies Inc. Write scheme for charge trapping memory
JP2017168155A (ja) * 2016-03-14 2017-09-21 東芝メモリ株式会社 半導体記憶装置
US11043823B2 (en) * 2017-04-06 2021-06-22 Tesla, Inc. System and method for facilitating conditioning and testing of rechargeable battery cells
US10402116B2 (en) * 2017-12-11 2019-09-03 Micron Technology, Inc. Systems and methods for writing zeros to a memory array
CN109716282B (zh) * 2018-12-07 2020-06-26 长江存储科技有限责任公司 用于编程存储器系统的方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5622278A (en) * 1979-07-27 1981-03-02 Fujitsu Ltd Decoder selection system
JPS62114200A (ja) * 1985-11-13 1987-05-25 Mitsubishi Electric Corp 半導体メモリ装置
JPH07109701B2 (ja) * 1987-11-30 1995-11-22 株式会社東芝 キャッシュメモリ
JPH0233799A (ja) * 1988-07-22 1990-02-02 Toshiba Corp 半導体記録装置のデコード方法およびその装置
JPH02141993A (ja) * 1988-11-21 1990-05-31 Toshiba Corp 半導体記憶装置
JP2862584B2 (ja) * 1989-08-31 1999-03-03 株式会社東芝 不揮発性半導体メモリ装置
JPH05314763A (ja) * 1992-05-12 1993-11-26 Mitsubishi Electric Corp 半導体記憶装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI622996B (zh) * 2017-03-07 2018-05-01 Toshiba Memory Corp Semiconductor memory device and memory system

Also Published As

Publication number Publication date
US5523980A (en) 1996-06-04
JPH07235193A (ja) 1995-09-05
KR950020748A (ko) 1995-07-24
DE4446998C2 (de) 2001-02-22
KR0147444B1 (ko) 1998-11-02
DE4446998A1 (de) 1995-06-29

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