DE69524913T2 - Nichtflüchtige Halbleiter-Speicherzelle mit Korrekturmöglichkeit einer überschriebenen Zelle, und Korrekturverfahren - Google Patents

Nichtflüchtige Halbleiter-Speicherzelle mit Korrekturmöglichkeit einer überschriebenen Zelle, und Korrekturverfahren

Info

Publication number
DE69524913T2
DE69524913T2 DE69524913T DE69524913T DE69524913T2 DE 69524913 T2 DE69524913 T2 DE 69524913T2 DE 69524913 T DE69524913 T DE 69524913T DE 69524913 T DE69524913 T DE 69524913T DE 69524913 T2 DE69524913 T2 DE 69524913T2
Authority
DE
Germany
Prior art keywords
correction
cell
semiconductor memory
volatile semiconductor
overwritten
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69524913T
Other languages
English (en)
Other versions
DE69524913D1 (de
Inventor
Keniti Imamiya
Hiroshi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69524913D1 publication Critical patent/DE69524913D1/de
Application granted granted Critical
Publication of DE69524913T2 publication Critical patent/DE69524913T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3413—Circuits or methods to recover overprogrammed nonvolatile memory cells detected during program verification, usually by means of a "soft" erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
DE69524913T 1994-09-30 1995-09-29 Nichtflüchtige Halbleiter-Speicherzelle mit Korrekturmöglichkeit einer überschriebenen Zelle, und Korrekturverfahren Expired - Lifetime DE69524913T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP23807894 1994-09-30
JP24139495A JP3199989B2 (ja) 1994-09-30 1995-09-20 不揮発性半導体記憶装置とその過書込み救済方法

Publications (2)

Publication Number Publication Date
DE69524913D1 DE69524913D1 (de) 2002-02-14
DE69524913T2 true DE69524913T2 (de) 2002-08-29

Family

ID=26533519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69524913T Expired - Lifetime DE69524913T2 (de) 1994-09-30 1995-09-29 Nichtflüchtige Halbleiter-Speicherzelle mit Korrekturmöglichkeit einer überschriebenen Zelle, und Korrekturverfahren

Country Status (7)

Country Link
US (4) US5691941A (de)
EP (1) EP0704852B1 (de)
JP (1) JP3199989B2 (de)
KR (1) KR100220528B1 (de)
CN (2) CN1045350C (de)
DE (1) DE69524913T2 (de)
TW (1) TW281764B (de)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3199989B2 (ja) * 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法
JP3062730B2 (ja) * 1996-07-10 2000-07-12 株式会社日立製作所 不揮発性半導体記憶装置および書込み方法
KR100284916B1 (ko) * 1997-07-29 2001-03-15 니시무로 타이죠 반도체 기억 장치 및 그 기입 제어 방법
JP3883687B2 (ja) * 1998-02-16 2007-02-21 株式会社ルネサステクノロジ 半導体装置、メモリカード及びデータ処理システム
US6144221A (en) * 1998-07-02 2000-11-07 Seiko Epson Corporation Voltage tolerant interface circuit
JP3999900B2 (ja) 1998-09-10 2007-10-31 株式会社東芝 不揮発性半導体メモリ
US6172909B1 (en) * 1999-08-09 2001-01-09 Advanced Micro Devices, Inc. Ramped gate technique for soft programming to tighten the Vt distribution
US6728913B1 (en) * 2000-02-25 2004-04-27 Advanced Micro Devices, Inc. Data recycling in memory
JP3631463B2 (ja) 2001-12-27 2005-03-23 株式会社東芝 不揮発性半導体記憶装置
US6614683B1 (en) * 2001-02-26 2003-09-02 Advanced Micro Devices, Inc. Ascending staircase read technique for a multilevel cell NAND flash memory device
US6512694B2 (en) * 2001-03-16 2003-01-28 Simtek Corporation NAND stack EEPROM with random programming capability
JP2003030993A (ja) * 2001-07-17 2003-01-31 Toshiba Corp 半導体記憶装置
KR100803989B1 (ko) * 2001-12-19 2008-02-15 주식회사 포스코 스트립 그라인더 미스트오일집진기의 오일흄 포집 제거장치
JP3850791B2 (ja) * 2001-12-20 2006-11-29 株式会社東芝 不揮発性半導体記憶装置
JP3977799B2 (ja) * 2003-12-09 2007-09-19 株式会社東芝 不揮発性半導体記憶装置
KR100471167B1 (ko) * 2002-05-13 2005-03-08 삼성전자주식회사 프로그램된 메모리 셀들을 검증하기 위한 페이지 버퍼를구비한 반도체 메모리 장치
US7349741B2 (en) * 2002-10-11 2008-03-25 Advanced Bionics, Llc Cochlear implant sound processor with permanently integrated replenishable power source
JP4256175B2 (ja) 2003-02-04 2009-04-22 株式会社東芝 不揮発性半導体メモリ
JP4220319B2 (ja) 2003-07-04 2009-02-04 株式会社東芝 不揮発性半導体記憶装置およびそのサブブロック消去方法
JP4287222B2 (ja) 2003-09-03 2009-07-01 株式会社東芝 不揮発性半導体記憶装置
JP4175991B2 (ja) 2003-10-15 2008-11-05 株式会社東芝 不揮発性半導体記憶装置
WO2006082619A1 (ja) 2005-01-31 2006-08-10 Spansion Llc 記憶装置、および該記憶装置のリファレンスセル調整方法
JP4836548B2 (ja) 2005-11-11 2011-12-14 株式会社東芝 半導体集積回路装置
ITRM20060074A1 (it) * 2006-02-15 2007-08-16 Micron Technology Inc Circuito per dati a latch singolo in un dispositivo di memoria volatile e delle a piu livelli
ITMI20062211A1 (it) * 2006-11-17 2008-05-18 St Microelectronics Srl Circuito e metodo per generare una tensione di riferimento in dispositivi di memoria a matrice di celle non volatili
US8009478B2 (en) 2009-10-05 2011-08-30 Micron Technology, Inc. Non-volatile memory apparatus and methods
US7957188B2 (en) * 2009-11-05 2011-06-07 Fs Semiconductor Corp., Ltd. Structures and methods of trimming threshold voltage of a flash EEPROM memory
JP5550386B2 (ja) * 2010-03-03 2014-07-16 株式会社東芝 不揮発性半導体記憶装置及びメモリシステム
JP2012014816A (ja) * 2010-07-05 2012-01-19 Toshiba Corp 不揮発性半導体記憶装置
JP2012133833A (ja) 2010-12-20 2012-07-12 Samsung Yokohama Research Institute Co Ltd 不揮発性半導体記憶装置
JP5306399B2 (ja) 2011-03-18 2013-10-02 株式会社東芝 不揮発性半導体メモリ
KR102243489B1 (ko) * 2019-04-17 2021-04-22 주식회사 와이에이치비에코 하이브리드 오일미스트 집진장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07109720B2 (ja) * 1988-07-29 1995-11-22 三菱電機株式会社 不揮発性半導体記憶装置
US5122985A (en) * 1990-04-16 1992-06-16 Giovani Santin Circuit and method for erasing eeprom memory arrays to prevent over-erased cells
US5357462A (en) * 1991-09-24 1994-10-18 Kabushiki Kaisha Toshiba Electrically erasable and programmable non-volatile semiconductor memory with automatic write-verify controller
US5361227A (en) * 1991-12-19 1994-11-01 Kabushiki Kaisha Toshiba Non-volatile semiconductor memory device and memory system using the same
KR950011965B1 (ko) * 1992-02-19 1995-10-12 삼성전자주식회사 불휘발성 반도체 메모리 장치
KR950000273B1 (ko) * 1992-02-21 1995-01-12 삼성전자 주식회사 불휘발성 반도체 메모리장치 및 그 최적화 기입방법
JP2922116B2 (ja) * 1993-09-02 1999-07-19 株式会社東芝 半導体記憶装置
JP3199989B2 (ja) * 1994-09-30 2001-08-20 株式会社東芝 不揮発性半導体記憶装置とその過書込み救済方法

Also Published As

Publication number Publication date
US5691941A (en) 1997-11-25
KR960012025A (ko) 1996-04-20
EP0704852B1 (de) 2002-01-09
US5959895A (en) 1999-09-28
EP0704852A2 (de) 1996-04-03
CN1123889C (zh) 2003-10-08
CN1126373A (zh) 1996-07-10
US6058046A (en) 2000-05-02
US5917756A (en) 1999-06-29
KR100220528B1 (ko) 1999-09-15
EP0704852A3 (de) 1998-08-19
CN1045350C (zh) 1999-09-29
CN1231478A (zh) 1999-10-13
DE69524913D1 (de) 2002-02-14
TW281764B (de) 1996-07-21
JP3199989B2 (ja) 2001-08-20
JPH08153398A (ja) 1996-06-11

Similar Documents

Publication Publication Date Title
DE69524913D1 (de) Nichtflüchtige Halbleiter-Speicherzelle mit Korrekturmöglichkeit einer überschriebenen Zelle, und Korrekturverfahren
DE69734631D1 (de) Sonnenzelle, und Montage- und Herstellungsmethode dafür
AU2593595A (en) Sensing schemes for flash memory with multilevel cells
AU3845399A (en) Nrom cell with improved programming, erasing and cycling
DE69316628D1 (de) Flüchtige Speicherzelle
DE69524645T2 (de) Speicherzelle mit programmierbarer Antischmelzsicherungstechnologie
AU2464495A (en) Non-volatile memory with field shield
DE69517978T2 (de) Nichtflüchtige speicheranordnung mit schutzanordnung
DE69430668D1 (de) Flash-speicher mit verringerter löschung und überschreibung
DE69528329T2 (de) EEPROM-Speicherzelle
EP0664544A3 (de) Spannungsreduzierung für nichtflüchtige Speicherzelle.
DE69706550T2 (de) Zwei-transistor-flash-speicherzelle
EP0656663A3 (de) Nichtflüssige-Halbleiterspeicheranordnung und Verfahren zur Löschung und Herstellung.
EP0757835A4 (de) Nicht-flüchtige hochgeschwindigkeits-eeprom-zelle und verfahren
DE538039T1 (de) Dichtungsanordnung fuer eine elektrochemische zelle.
DE69712572D1 (de) Fehlerdiffusionsverfahren mit symmetrischer Verbesserung
DE69629669D1 (de) Leseverfahren und -schaltung für nichtflüchtige Speicherzellen mit Entzerrerschaltung
DE69621770T2 (de) Sektoriziertes elektrisch löschbares und programmierbares nichtflüchtiges Speichergerät mit Redundanz
AU8692298A (en) Method for preventing sub-threshold leakage in flash memory cells
DE69525921D1 (de) Abtastspeichervorrichtung und Fehlerkorrekturverfahren
GB2323705B (en) Semiconductor device with memory cell and fabrication method thereof
NL1007054A1 (nl) Foutcorrectiemethode en -inrichting.
DE69630663D1 (de) Verfahren zum Löschen einer elektrisch programmierbaren und löschbaren nichtflüchtigen Speicherzelle
EP0601747A3 (de) Nichtflüchtige Halbleiteranordnung und Verfahren zur Herstellung.
NL1007004A1 (nl) Foutcorrectiemethode en inrichting.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition