DE4226421A1 - Masken-nur-lesespeicher - Google Patents

Masken-nur-lesespeicher

Info

Publication number
DE4226421A1
DE4226421A1 DE4226421A DE4226421A DE4226421A1 DE 4226421 A1 DE4226421 A1 DE 4226421A1 DE 4226421 A DE4226421 A DE 4226421A DE 4226421 A DE4226421 A DE 4226421A DE 4226421 A1 DE4226421 A1 DE 4226421A1
Authority
DE
Germany
Prior art keywords
word line
area
diffusion region
region
mask read
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE4226421A
Other languages
German (de)
English (en)
Inventor
Sung-Hee Cho
Jung-Dal Choi
Hyong-Gon Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of DE4226421A1 publication Critical patent/DE4226421A1/de
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C17/00Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B20/00Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
DE4226421A 1991-09-04 1992-08-10 Masken-nur-lesespeicher Pending DE4226421A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (1)

Publication Number Publication Date
DE4226421A1 true DE4226421A1 (de) 1993-03-18

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4226421A Pending DE4226421A1 (de) 1991-09-04 1992-08-10 Masken-nur-lesespeicher

Country Status (7)

Country Link
KR (1) KR940004609B1 (enExample)
CN (1) CN1070279A (enExample)
DE (1) DE4226421A1 (enExample)
FR (1) FR2680908A1 (enExample)
GB (1) GB2259405A (enExample)
IT (1) IT1261716B (enExample)
TW (1) TW222341B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10254155A1 (de) * 2002-11-20 2004-06-17 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement und Verfahren zu dessen Herstellung

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型rom
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10254155A1 (de) * 2002-11-20 2004-06-17 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement und Verfahren zu dessen Herstellung
US6906942B2 (en) 2002-11-20 2005-06-14 Infineon Technologies Ag Programmable mask ROM building element and process of manufacture
DE10254155B4 (de) * 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement

Also Published As

Publication number Publication date
IT1261716B (it) 1996-05-30
GB9216801D0 (en) 1992-09-23
FR2680908A1 (fr) 1993-03-05
GB2259405A (en) 1993-03-10
KR940004609B1 (ko) 1994-05-25
CN1070279A (zh) 1993-03-24
TW222341B (enExample) 1994-04-11
KR930006951A (ko) 1993-04-22
ITMI921962A1 (it) 1994-02-07
ITMI921962A0 (it) 1992-08-07

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law