IT1261716B - Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit. - Google Patents
Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit.Info
- Publication number
- IT1261716B IT1261716B ITMI921962A ITMI921962A IT1261716B IT 1261716 B IT1261716 B IT 1261716B IT MI921962 A ITMI921962 A IT MI921962A IT MI921962 A ITMI921962 A IT MI921962A IT 1261716 B IT1261716 B IT 1261716B
- Authority
- IT
- Italy
- Prior art keywords
- region
- formation
- bit lines
- word line
- extending
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 3
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
- G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
- G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
- G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910015427A KR940004609B1 (ko) | 1991-09-04 | 1991-09-04 | 마스크 리드 온리 메모리 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| ITMI921962A0 ITMI921962A0 (it) | 1992-08-07 |
| ITMI921962A1 ITMI921962A1 (it) | 1994-02-07 |
| IT1261716B true IT1261716B (it) | 1996-05-30 |
Family
ID=19319567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ITMI921962A IT1261716B (it) | 1991-09-04 | 1992-08-07 | Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit. |
Country Status (7)
| Country | Link |
|---|---|
| KR (1) | KR940004609B1 (enExample) |
| CN (1) | CN1070279A (enExample) |
| DE (1) | DE4226421A1 (enExample) |
| FR (1) | FR2680908A1 (enExample) |
| GB (1) | GB2259405A (enExample) |
| IT (1) | IT1261716B (enExample) |
| TW (1) | TW222341B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2683078A1 (fr) * | 1991-10-29 | 1993-04-30 | Samsung Electronics Co Ltd | Memoire morte a masque de type non-et. |
| KR100446603B1 (ko) * | 1997-12-12 | 2004-11-03 | 삼성전자주식회사 | 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자 |
| DE10254155B4 (de) | 2002-11-20 | 2010-12-09 | Infineon Technologies Ag | Maskenprogrammierbares ROM-Bauelement |
| CN100343920C (zh) * | 2004-07-14 | 2007-10-17 | 义隆电子股份有限公司 | 适用字符线金属导线技术的平面单元只读存储器 |
| US7953595B2 (en) | 2006-10-18 | 2011-05-31 | Polycom, Inc. | Dual-transform coding of audio signals |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56156993A (en) * | 1980-05-08 | 1981-12-03 | Fujitsu Ltd | Read only memory |
| GB2102623B (en) * | 1981-06-30 | 1985-04-11 | Tokyo Shibaura Electric Co | Method of manufacturing a semiconductors memory device |
| JPS6329579A (ja) * | 1986-07-23 | 1988-02-08 | Hitachi Ltd | 縦型ｒｏｍ |
| IT1217403B (it) * | 1988-04-12 | 1990-03-22 | Sgs Thomson Microelectronics | Matrice di memoria a tovaglia con celle eprom sfalsate |
-
1991
- 1991-09-04 KR KR1019910015427A patent/KR940004609B1/ko not_active Expired - Fee Related
-
1992
- 1992-07-31 FR FR9209528A patent/FR2680908A1/fr active Pending
- 1992-08-07 IT ITMI921962A patent/IT1261716B/it active IP Right Grant
- 1992-08-07 GB GB9216801A patent/GB2259405A/en not_active Withdrawn
- 1992-08-08 TW TW081106279A patent/TW222341B/zh active
- 1992-08-10 DE DE4226421A patent/DE4226421A1/de active Pending
- 1992-08-10 CN CN92109280A patent/CN1070279A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| ITMI921962A0 (it) | 1992-08-07 |
| KR940004609B1 (ko) | 1994-05-25 |
| FR2680908A1 (fr) | 1993-03-05 |
| ITMI921962A1 (it) | 1994-02-07 |
| GB9216801D0 (en) | 1992-09-23 |
| KR930006951A (ko) | 1993-04-22 |
| DE4226421A1 (de) | 1993-03-18 |
| CN1070279A (zh) | 1993-03-24 |
| GB2259405A (en) | 1993-03-10 |
| TW222341B (enExample) | 1994-04-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 0001 | Granted |