KR940004609B1 - 마스크 리드 온리 메모리 - Google Patents

마스크 리드 온리 메모리 Download PDF

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Publication number
KR940004609B1
KR940004609B1 KR1019910015427A KR910015427A KR940004609B1 KR 940004609 B1 KR940004609 B1 KR 940004609B1 KR 1019910015427 A KR1019910015427 A KR 1019910015427A KR 910015427 A KR910015427 A KR 910015427A KR 940004609 B1 KR940004609 B1 KR 940004609B1
Authority
KR
South Korea
Prior art keywords
memory
mask read
region
word line
device isolation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019910015427A
Other languages
English (en)
Korean (ko)
Other versions
KR930006951A (ko
Inventor
조성희
이형곤
최정달
Original Assignee
삼성전자 주식회사
김광호
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 삼성전자 주식회사, 김광호 filed Critical 삼성전자 주식회사
Priority to KR1019910015427A priority Critical patent/KR940004609B1/ko
Priority to FR9209528A priority patent/FR2680908A1/fr
Priority to ITMI921962A priority patent/IT1261716B/it
Priority to GB9216801A priority patent/GB2259405A/en
Priority to TW081106279A priority patent/TW222341B/zh
Priority to CN92109280A priority patent/CN1070279A/zh
Priority to DE4226421A priority patent/DE4226421A1/de
Publication of KR930006951A publication Critical patent/KR930006951A/ko
Application granted granted Critical
Publication of KR940004609B1 publication Critical patent/KR940004609B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • G11C17/10—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM
    • G11C17/12—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices
    • G11C17/123—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements in which contents are determined during manufacturing by a predetermined arrangement of coupling elements, e.g. mask-programmable ROM using field-effect devices comprising cells having several storage transistors connected in series
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
KR1019910015427A 1991-09-04 1991-09-04 마스크 리드 온리 메모리 Expired - Fee Related KR940004609B1 (ko)

Priority Applications (7)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리
FR9209528A FR2680908A1 (fr) 1991-09-04 1992-07-31 Dispositif de memoire morte a masque.
GB9216801A GB2259405A (en) 1991-09-04 1992-08-07 Semiconductor read only memory
ITMI921962A IT1261716B (it) 1991-09-04 1992-08-07 Memoria di sola lettura a maschera a programmazione di dati dopo formazione delle linee dei bit.
TW081106279A TW222341B (enExample) 1991-09-04 1992-08-08
CN92109280A CN1070279A (zh) 1991-09-04 1992-08-10 掩膜只读存储器
DE4226421A DE4226421A1 (de) 1991-09-04 1992-08-10 Masken-nur-lesespeicher

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910015427A KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Publications (2)

Publication Number Publication Date
KR930006951A KR930006951A (ko) 1993-04-22
KR940004609B1 true KR940004609B1 (ko) 1994-05-25

Family

ID=19319567

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910015427A Expired - Fee Related KR940004609B1 (ko) 1991-09-04 1991-09-04 마스크 리드 온리 메모리

Country Status (7)

Country Link
KR (1) KR940004609B1 (enExample)
CN (1) CN1070279A (enExample)
DE (1) DE4226421A1 (enExample)
FR (1) FR2680908A1 (enExample)
GB (1) GB2259405A (enExample)
IT (1) IT1261716B (enExample)
TW (1) TW222341B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2683078A1 (fr) * 1991-10-29 1993-04-30 Samsung Electronics Co Ltd Memoire morte a masque de type non-et.
KR100446603B1 (ko) * 1997-12-12 2004-11-03 삼성전자주식회사 강유전성액정화합물,이를포함한액정조성물및이를채용한액정표시소자
DE10254155B4 (de) 2002-11-20 2010-12-09 Infineon Technologies Ag Maskenprogrammierbares ROM-Bauelement
CN100343920C (zh) * 2004-07-14 2007-10-17 义隆电子股份有限公司 适用字符线金属导线技术的平面单元只读存储器
US7953595B2 (en) 2006-10-18 2011-05-31 Polycom, Inc. Dual-transform coding of audio signals

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56156993A (en) * 1980-05-08 1981-12-03 Fujitsu Ltd Read only memory
GB2102623B (en) * 1981-06-30 1985-04-11 Tokyo Shibaura Electric Co Method of manufacturing a semiconductors memory device
JPS6329579A (ja) * 1986-07-23 1988-02-08 Hitachi Ltd 縦型ｒｏｍ
IT1217403B (it) * 1988-04-12 1990-03-22 Sgs Thomson Microelectronics Matrice di memoria a tovaglia con celle eprom sfalsate

Also Published As

Publication number Publication date
ITMI921962A0 (it) 1992-08-07
FR2680908A1 (fr) 1993-03-05
ITMI921962A1 (it) 1994-02-07
IT1261716B (it) 1996-05-30
GB9216801D0 (en) 1992-09-23
KR930006951A (ko) 1993-04-22
DE4226421A1 (de) 1993-03-18
CN1070279A (zh) 1993-03-24
GB2259405A (en) 1993-03-10
TW222341B (enExample) 1994-04-11

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