DE4008624C2 - - Google Patents

Info

Publication number
DE4008624C2
DE4008624C2 DE4008624A DE4008624A DE4008624C2 DE 4008624 C2 DE4008624 C2 DE 4008624C2 DE 4008624 A DE4008624 A DE 4008624A DE 4008624 A DE4008624 A DE 4008624A DE 4008624 C2 DE4008624 C2 DE 4008624C2
Authority
DE
Germany
Prior art keywords
pads
substrate
insulating layer
substrates
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4008624A
Other languages
German (de)
English (en)
Other versions
DE4008624A1 (de
Inventor
Dieter Dipl.-Phys. Dr. 7410 Reutlingen De Seipler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Robert Bosch GmbH
Original Assignee
Robert Bosch GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH
Priority to DE4008624A priority Critical patent/DE4008624A1/de
Publication of DE4008624A1 publication Critical patent/DE4008624A1/de
Application granted granted Critical
Publication of DE4008624C2 publication Critical patent/DE4008624C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4473—Conductive organic materials, e.g. conductive adhesives or conductive inks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H10W70/08—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs
    • H10W70/09—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers by depositing layers on the chip or wafer, e.g. "chip-first" RDLs extending onto an encapsulation that laterally surrounds the chip or wafer, e.g. fan-out wafer level package [FOWLP] RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/012—Manufacture or treatment of encapsulations on active surfaces of flip-chip devices, e.g. forming underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/15—Encapsulations, e.g. protective coatings characterised by their shape or disposition on active surfaces of flip-chip devices, e.g. underfills
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H10W70/654—Top-view layouts
    • H10W70/655—Fan-out layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07251—Connecting or disconnecting of bump connectors characterised by changes in properties of the bump connectors during connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H10W72/325—Die-attach connectors having a filler embedded in a matrix
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
    • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/853—On the same surface
    • H10W72/856—Bump connectors and die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Wire Bonding (AREA)
DE4008624A 1989-04-05 1990-03-17 Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur Granted DE4008624A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE4008624A DE4008624A1 (de) 1989-04-05 1990-03-17 Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE3910910 1989-04-05
US07/452,110 US5068714A (en) 1989-04-05 1989-12-14 Method of electrically and mechanically connecting a semiconductor to a substrate using an electrically conductive tacky adhesive and the device so made
DE4008624A DE4008624A1 (de) 1989-04-05 1990-03-17 Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur

Publications (2)

Publication Number Publication Date
DE4008624A1 DE4008624A1 (de) 1990-10-11
DE4008624C2 true DE4008624C2 (enExample) 1992-04-16

Family

ID=25879520

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4008624A Granted DE4008624A1 (de) 1989-04-05 1990-03-17 Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur

Country Status (4)

Country Link
US (1) US5068714A (enExample)
JP (1) JP2871800B2 (enExample)
KR (1) KR100196242B1 (enExample)
DE (1) DE4008624A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046296A1 (de) * 2000-07-17 2002-02-07 Infineon Technologies Ag Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zur Herstellung

Families Citing this family (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5074947A (en) * 1989-12-18 1991-12-24 Epoxy Technology, Inc. Flip chip technology using electrically conductive polymers and dielectrics
US5611140A (en) * 1989-12-18 1997-03-18 Epoxy Technology, Inc. Method of forming electrically conductive polymer interconnects on electrical substrates
US5866951A (en) * 1990-10-12 1999-02-02 Robert Bosch Gmbh Hybrid circuit with an electrically conductive adhesive
DE4032397A1 (de) * 1990-10-12 1992-04-16 Bosch Gmbh Robert Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur
JP2940269B2 (ja) * 1990-12-26 1999-08-25 日本電気株式会社 集積回路素子の接続方法
US5265329A (en) * 1991-06-12 1993-11-30 Amp Incorporated Fiber-filled elastomeric connector attachment method and product
US5225966A (en) * 1991-07-24 1993-07-06 At&T Bell Laboratories Conductive adhesive film techniques
US5140286A (en) * 1991-08-02 1992-08-18 Motorola, Inc. Oscillator with bias and buffer circuits formed in a die mounted with distributed elements on ceramic substrate
FR2684804B1 (fr) * 1991-12-06 1994-01-28 Thomson Csf Dispositif de montage de circuits integres monolithiques hyperfrequences a tres large bande.
JP2512258B2 (ja) * 1992-03-11 1996-07-03 松下電器産業株式会社 シ―ト給送装置
US5266833A (en) * 1992-03-30 1993-11-30 Capps David F Integrated circuit bus structure
US5434524A (en) * 1992-09-16 1995-07-18 International Business Machines Corporation Method of clocking integrated circuit chips
US5413489A (en) * 1993-04-27 1995-05-09 Aptix Corporation Integrated socket and IC package assembly
US5383787A (en) * 1993-04-27 1995-01-24 Aptix Corporation Integrated circuit package with direct access to internal signals
DE4319965C3 (de) 1993-06-14 2000-09-14 Emi Tec Elektronische Material Verfahren zur Herstellung eines Gehäuses mit elektromagnetischer Abschirmung
DE4327560A1 (de) * 1993-08-17 1995-02-23 Hottinger Messtechnik Baldwin Verfahren zum Kontaktieren von Leiterbahnanordnungen und Kontaktanordnung
DE4339786C5 (de) * 1993-11-18 2004-02-05 Emi-Tec Elektronische Materialien Gmbh Verfahren zur Herstellung einer Anordung zur Wärmeableitung
US5543585A (en) * 1994-02-02 1996-08-06 International Business Machines Corporation Direct chip attachment (DCA) with electrically conductive adhesives
US5750002A (en) * 1994-10-04 1998-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Method for fabricating piezoelectric polymer acoustic sensors
US6093970A (en) * 1994-11-22 2000-07-25 Sony Corporation Semiconductor device and method for manufacturing the same
JPH08167630A (ja) * 1994-12-15 1996-06-25 Hitachi Ltd チップ接続構造
DE19518659A1 (de) * 1995-05-20 1996-11-21 Bosch Gmbh Robert Verfahren zum Verbinden eines elektrischen Anschlußes eines unverpackten IC-Bauelements mit einer Leiterbahn auf einem Substrat
KR0172000B1 (ko) * 1995-08-11 1999-05-01 이대원 전도성 잉크를 이용한 반도체 패키지용 기판의 제조방법
CA2156941A1 (en) * 1995-08-21 1997-02-22 Jonathan H. Orchard-Webb Method of making electrical connections to integrated circuit
US5744383A (en) * 1995-11-17 1998-04-28 Altera Corporation Integrated circuit package fabrication method
US5842273A (en) * 1996-01-26 1998-12-01 Hewlett-Packard Company Method of forming electrical interconnects using isotropic conductive adhesives and connections formed thereby
US5956601A (en) * 1996-04-25 1999-09-21 Kabushiki Kaisha Toshiba Method of mounting a plurality of semiconductor devices in corresponding supporters
US5741430A (en) * 1996-04-25 1998-04-21 Lucent Technologies Inc. Conductive adhesive bonding means
US5717246A (en) 1996-07-29 1998-02-10 Micron Technology, Inc. Hybrid frame with lead-lock tape
JPH10303352A (ja) * 1997-04-22 1998-11-13 Toshiba Corp 半導体装置および半導体装置の製造方法
US6143396A (en) * 1997-05-01 2000-11-07 Texas Instruments Incorporated System and method for reinforcing a bond pad
US5920037A (en) * 1997-05-12 1999-07-06 International Business Machines Corporation Conductive bonding design for metal backed circuits
DE69835747T2 (de) * 1997-06-26 2007-09-13 Hitachi Chemical Co., Ltd. Substrat zur montage von halbleiterchips
US6260264B1 (en) 1997-12-08 2001-07-17 3M Innovative Properties Company Methods for making z-axis electrical connections
US20070102827A1 (en) * 1997-12-08 2007-05-10 3M Innovative Properties Company Solvent Assisted Burnishing of Pre-Underfilled Solder-Bumped Wafers for Flipchip Bonding
US6118080A (en) * 1998-01-13 2000-09-12 Micron Technology, Inc. Z-axis electrical contact for microelectronic devices
US6137063A (en) * 1998-02-27 2000-10-24 Micron Technology, Inc. Electrical interconnections
US6300231B1 (en) 1998-05-29 2001-10-09 Tessera Inc. Method for creating a die shrink insensitive semiconductor package and component therefor
US6139661A (en) * 1998-10-20 2000-10-31 International Business Machines Corporation Two step SMT method using masked cure
US6891110B1 (en) 1999-03-24 2005-05-10 Motorola, Inc. Circuit chip connector and method of connecting a circuit chip
US6290881B1 (en) 1999-04-14 2001-09-18 Allied Photochemical, Inc. Ultraviolet curable silver composition and related method
US7157507B2 (en) 1999-04-14 2007-01-02 Allied Photochemical, Inc. Ultraviolet curable silver composition and related method
US6230400B1 (en) * 1999-09-17 2001-05-15 George Tzanavaras Method for forming interconnects
CA2385041C (en) 1999-10-06 2009-11-24 Uv Specialities, Inc. Uv curable compositions for producing electroluminescent coatings
US6767577B1 (en) 1999-10-06 2004-07-27 Allied Photochemical, Inc. Uv curable compositions for producing electroluminescent coatings
US6500877B1 (en) 1999-11-05 2002-12-31 Krohn Industries, Inc. UV curable paint compositions and method of making and applying same
US6509389B1 (en) 1999-11-05 2003-01-21 Uv Specialties, Inc. UV curable compositions for producing mar resistant coatings and method for depositing same
AU4139501A (en) 1999-12-06 2001-06-12 Krohn Industries, Inc. Uv curable compositions for producing multilayer pain coatings
AU4139401A (en) * 1999-12-06 2001-06-12 Slidekote, Inc. Uv curable lubricant compositions
US6805917B1 (en) 1999-12-06 2004-10-19 Roy C. Krohn UV curable compositions for producing decorative metallic coatings
JP2001185845A (ja) * 1999-12-15 2001-07-06 Internatl Business Mach Corp <Ibm> 電子部品の製造方法及び該電子部品
WO2001051567A1 (en) 2000-01-13 2001-07-19 Uv Specialties, Inc. Uv curable transparent conductive compositions
AU2001226390A1 (en) * 2000-01-13 2001-07-24 Uv Specialties, Inc. Uv curable ferromagnetic compositions
JP2001217279A (ja) * 2000-02-01 2001-08-10 Mitsubishi Electric Corp 高密度実装装置
ATE352101T1 (de) * 2000-02-09 2007-02-15 Imec Inter Uni Micro Electr Verfahren zur flip-chip-montage von halbleitervorrichtungen mit klebstoffen
JP3781610B2 (ja) * 2000-06-28 2006-05-31 株式会社東芝 半導体装置
CA2421807A1 (en) 2000-09-06 2002-03-14 Allied Photochemical, Inc. Uv curable silver chloride compositions for producing silver coatings
US7323499B2 (en) 2000-09-06 2008-01-29 Allied Photochemical, Inc. UV curable silver chloride compositions for producing silver coatings
CA2332190A1 (en) 2001-01-25 2002-07-25 Efos Inc. Addressable semiconductor array light source for localized radiation delivery
US6704165B2 (en) * 2001-06-08 2004-03-09 Seagate Technology Llc Attachment of a head-gimbal assembly to a printed circuit board actuator arm using Z-axis conductive adhesive film
US7158350B1 (en) * 2002-11-05 2007-01-02 Hutchinson Technology Incorporated Ground interconnects
US6946628B2 (en) 2003-09-09 2005-09-20 Klai Enterprises, Inc. Heating elements deposited on a substrate and related method
US7495179B2 (en) * 2003-10-06 2009-02-24 Tessera, Inc. Components with posts and pads
US7462936B2 (en) 2003-10-06 2008-12-09 Tessera, Inc. Formation of circuitry with modification of feature height
US8207604B2 (en) * 2003-12-30 2012-06-26 Tessera, Inc. Microelectronic package comprising offset conductive posts on compliant layer
US7709968B2 (en) * 2003-12-30 2010-05-04 Tessera, Inc. Micro pin grid array with pin motion isolation
JP4712633B2 (ja) * 2005-08-04 2011-06-29 株式会社リコー 自動原稿搬送装置
US7928549B2 (en) * 2006-09-19 2011-04-19 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit devices with multi-dimensional pad structures
EP2637202A3 (en) 2007-09-28 2014-03-12 Tessera, Inc. Flip chip interconnection with etched posts on a microelectronic element joined to etched posts on a substrate by a fusible metal and corresponding manufacturing method
US20100044860A1 (en) * 2008-08-21 2010-02-25 Tessera Interconnect Materials, Inc. Microelectronic substrate or element having conductive pads and metal posts joined thereto using bond layer
US8330272B2 (en) 2010-07-08 2012-12-11 Tessera, Inc. Microelectronic packages with dual or multiple-etched flip-chip connectors
US8580607B2 (en) 2010-07-27 2013-11-12 Tessera, Inc. Microelectronic packages with nanoparticle joining
US20120068342A1 (en) * 2010-09-16 2012-03-22 Lee Kevin J Electrically conductive adhesive for temporary bonding
US8853558B2 (en) 2010-12-10 2014-10-07 Tessera, Inc. Interconnect structure
JP5912616B2 (ja) * 2012-02-08 2016-04-27 株式会社ジェイデバイス 半導体装置及びその製造方法
CN103474401B (zh) * 2012-06-06 2016-12-14 欣兴电子股份有限公司 载板结构与芯片封装结构及其制作方法
TWI532100B (zh) * 2012-08-22 2016-05-01 國家中山科學研究院 三維半導體電路結構及其製法
US9633971B2 (en) 2015-07-10 2017-04-25 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
US10886250B2 (en) 2015-07-10 2021-01-05 Invensas Corporation Structures and methods for low temperature bonding using nanoparticles
TWI822659B (zh) 2016-10-27 2023-11-21 美商艾德亞半導體科技有限責任公司 用於低溫接合的結構和方法
CN110544674A (zh) * 2018-05-28 2019-12-06 浙江清华柔性电子技术研究院 芯片集成结构
CN111796493B (zh) * 2020-08-03 2024-08-23 沈阳芯源微电子设备股份有限公司 涂胶显影设备
KR20230126736A (ko) 2020-12-30 2023-08-30 아데이아 세미컨덕터 본딩 테크놀로지스 인코포레이티드 전도성 특징부를 갖는 구조 및 그 형성방법

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3292240A (en) * 1963-08-08 1966-12-20 Ibm Method of fabricating microminiature functional components
US3303393A (en) * 1963-12-27 1967-02-07 Ibm Terminals for microminiaturized devices and methods of connecting same to circuit panels
US3465209A (en) * 1966-07-07 1969-09-02 Rca Corp Semiconductor devices and methods of manufacture thereof
DE1627762B2 (de) * 1966-09-17 1972-11-23 Nippon Electric Co. Ltd., Tokio Verfahren zur Herstellung einer Halbleitervorrichtung
US3795047A (en) * 1972-06-15 1974-03-05 Ibm Electrical interconnect structuring for laminate assemblies and fabricating methods therefor
DE2330161A1 (de) * 1973-06-08 1974-12-19 Minnesota Mining & Mfg Verbesserte schaltkreise und verfahren zu deren herstellung
US4069791A (en) * 1976-10-01 1978-01-24 E. I. Du Pont De Nemours And Company Automatic toning device
US4164005A (en) * 1977-09-02 1979-08-07 Sprague Electric Company Solid electrolyte capacitor, solderable terminations therefor and method for making
US4234626A (en) * 1978-02-01 1980-11-18 E. I. Du Pont De Nemours And Company Producing printed circuits by conjoining metal powder images
US4157407A (en) * 1978-02-13 1979-06-05 E. I. Du Pont De Nemours And Company Toning and solvent washout process for making conductive interconnections
US4172547A (en) * 1978-11-02 1979-10-30 Delgrande Donald J Method for soldering conventionally unsolderable surfaces
US4411980A (en) * 1981-09-21 1983-10-25 E. I. Du Pont De Nemours And Company Process for the preparation of flexible circuits
JPS59195837A (ja) * 1983-04-21 1984-11-07 Sharp Corp Ｌｓｉチツプボンデイング方法
US4469777A (en) * 1983-12-01 1984-09-04 E. I. Du Pont De Nemours And Company Single exposure process for preparing printed circuits
US4631111A (en) * 1984-11-27 1986-12-23 E. I. Du Pont De Nemours And Company Dichromic process for preparation of conductive circuit
US4572764A (en) * 1984-12-13 1986-02-25 E. I. Du Pont De Nemours And Company Preparation of photoformed plastic multistrate by via formation first
JPS6290938A (ja) * 1985-10-17 1987-04-25 Matsushita Electric Ind Co Ltd 半導体装置
US4667401A (en) * 1985-11-26 1987-05-26 Clements James R Method of making an electronic device using an uniaxial conductive adhesive
US4868637A (en) * 1985-11-26 1989-09-19 Clements James R Electronic device including uniaxial conductive adhesive and method of making same
US4720740A (en) * 1985-11-26 1988-01-19 Clements James R Electronic device including uniaxial conductive adhesive and method of making same
JPS63293894A (ja) * 1987-05-26 1988-11-30 Makuro Eng:Kk 印刷配線板の製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10046296A1 (de) * 2000-07-17 2002-02-07 Infineon Technologies Ag Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zur Herstellung
DE10046296C2 (de) * 2000-07-17 2002-10-10 Infineon Technologies Ag Elektronisches Chipbauteil mit einer integrierten Schaltung und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
JP2871800B2 (ja) 1999-03-17
JPH0318040A (ja) 1991-01-25
KR100196242B1 (ko) 1999-06-15
US5068714A (en) 1991-11-26
DE4008624A1 (de) 1990-10-11
KR900017160A (ko) 1990-11-15

Similar Documents

Publication Publication Date Title
DE4008624C2 (enExample)
DE69519967T2 (de) Halbleiteranordnung mit zwei Halbleitersubstrate
DE69133468T3 (de) Halbleiterchipanordnungen, Herstellungsmethoden und Komponenten für dieselbe
DE69526895T2 (de) Verfahren zur Herstellung einer halbleitenden Anordnung und einer Halbleiterscheibe
DE3586732T2 (de) Verfahren zum herstellen einer dreidimentionaler halbleiteranordung.
DE60109983T2 (de) Elektronische Bauteile in Chipform, Pseudo-Wafer dafür und Verfahren zu ihrer Herstellung
DE69014871T2 (de) Verfahren zur Bildung metallischer Kontaktflächen und Anschlüsse auf Halbleiterchips.
DE69325065T2 (de) Halbleitervorrichtung, Bildabtastvorrichtung und Verfahren zu ihrer Herstellung
DE3786914T2 (de) Verfahren zum herstellen einer integrierten schaltungspackungsstruktur.
DE3814469C2 (enExample)
DE68923512T2 (de) Gitterartige Steckerstift-Anordnung für einen paketförmigen integrierten Schaltkreis.
DE3644874A1 (de) Hybridstruktur
DE10027852A1 (de) Verfahren zum Anordnen eines Halbleiterchips auf einem Substrat und zum Anordnen auf einem Substrat geeignetes Halbleiterbaelement
EP0358867A1 (de) Flip-Chip-Montage mit einer Lötstoppschicht aus einem oxidierbaren Metall
DE1640457B1 (de) Elektrische Verbindungen in Schaltkreisanordnungen und Verfahren zu ihrer Herstellung
WO2004003991A2 (de) Elektronisches bauteil mit einer gehäusepackung
DE69535361T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung und eine Halbleitervorrichtung
EP1620893A2 (de) Halbleiterwafer, nutzen und elektronisches bauteil mit gestapelten halbleiterchips, sowie verfahren zur herstellung derselben
DE10240460A1 (de) Universelles Halbleitergehäuse mit vorvernetzten Kunststoffeinbettmassen und Verfahren zur Herstellung desselben
WO1992007378A1 (de) Verfahren zur herstellung einer hybriden halbleiterstruktur und nach dem verfahren hergestellte halbleiterstruktur
DE10239318A1 (de) Umverdrahten von Kontaktstellen für integrierte Schaltungschips
DE69316159T2 (de) Verfahren zum Aufbringen von Kontakthöckern auf einer Halbleitervorrichtung sowie zum Verbinden dieser Vorrichtung mit einer Leiterplatte
DE2615758A1 (de) Verfahren zur herstellung einer anordnung fuer das packen monolithisch integrierter schaltungen
DE69128014T2 (de) Herstellungsverfahren für integrierte Schaltungschip Packung
WO1998013863A1 (de) Verfahren zur flipchip-kontaktierung eines halbleiterchips mit geringer anschlusszahl

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee