DE3886871T2 - Verfahren zur Herstellung eines Feldeffekttransistors mit Übergangsgatter. - Google Patents

Verfahren zur Herstellung eines Feldeffekttransistors mit Übergangsgatter.

Info

Publication number
DE3886871T2
DE3886871T2 DE3886871T DE3886871T DE3886871T2 DE 3886871 T2 DE3886871 T2 DE 3886871T2 DE 3886871 T DE3886871 T DE 3886871T DE 3886871 T DE3886871 T DE 3886871T DE 3886871 T2 DE3886871 T2 DE 3886871T2
Authority
DE
Germany
Prior art keywords
producing
field effect
effect transistor
transition gate
transition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3886871T
Other languages
English (en)
Other versions
DE3886871D1 (de
Inventor
Kazuhiko C O Patent Divi Inoue
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3886871D1 publication Critical patent/DE3886871D1/de
Publication of DE3886871T2 publication Critical patent/DE3886871T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66893—Unipolar field-effect transistors with a PN junction gate, i.e. JFET
    • H01L29/66924—Unipolar field-effect transistors with a PN junction gate, i.e. JFET with an active layer made of a group 13/15 material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/10—Lift-off masking
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/105—Masks, metal

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE3886871T 1987-10-08 1988-10-07 Verfahren zur Herstellung eines Feldeffekttransistors mit Übergangsgatter. Expired - Lifetime DE3886871T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62254146A JPH0195564A (ja) 1987-10-08 1987-10-08 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
DE3886871D1 DE3886871D1 (de) 1994-02-17
DE3886871T2 true DE3886871T2 (de) 1994-06-09

Family

ID=17260862

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3886871T Expired - Lifetime DE3886871T2 (de) 1987-10-08 1988-10-07 Verfahren zur Herstellung eines Feldeffekttransistors mit Übergangsgatter.

Country Status (4)

Country Link
US (1) US4895811A (de)
EP (1) EP0311109B1 (de)
JP (1) JPH0195564A (de)
DE (1) DE3886871T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5273937A (en) * 1988-01-08 1993-12-28 Kabushiki Kaisha Toshiba Metal semiconductor device and method for producing the same
US5011785A (en) * 1990-10-30 1991-04-30 The United States Of America As Represented By The Secretary Of The Navy Insulator assisted self-aligned gate junction
DE4113969A1 (de) * 1991-04-29 1992-11-05 Telefunken Electronic Gmbh Verfahren zur herstellung von ohmschen kontakten fuer verbindungshalbleiter
US5536677A (en) * 1994-12-01 1996-07-16 Motorola, Inc. Method of forming conductive bumps on a semiconductor device using a double mask structure
US6609652B2 (en) * 1997-05-27 2003-08-26 Spheretek, Llc Ball bumping substrates, particuarly wafers
US6051856A (en) * 1997-09-30 2000-04-18 Samsung Electronics Co., Ltd. Voltage-controlled resistor utilizing bootstrap gate FET

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2824026A1 (de) * 1978-06-01 1979-12-20 Licentia Gmbh Verfahren zum herstellen eines sperrschicht-feldeffekttransistors
JPS57178376A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Junction type field-effect transistor
JPS57178374A (en) * 1981-04-27 1982-11-02 Sumitomo Electric Ind Ltd Junction type field-efect transistor and its manufacture
DE3150412A1 (de) * 1981-12-19 1983-07-14 Drägerwerk AG, 2400 Lübeck Notatemschutzgeraet
JPS58143586A (ja) * 1982-02-22 1983-08-26 Toshiba Corp 電界効果トランジスタの製造方法
JPS58145158A (ja) * 1982-02-23 1983-08-29 Toshiba Corp 電界効果トランジスタ及びその製造方法
US4561169A (en) * 1982-07-30 1985-12-31 Hitachi, Ltd. Method of manufacturing semiconductor device utilizing multilayer mask
JPS61163664A (ja) * 1985-01-11 1986-07-24 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61177780A (ja) * 1985-02-01 1986-08-09 Mitsubishi Electric Corp 半導体装置の製造方法
FR2579827B1 (fr) * 1985-04-01 1987-05-15 Thomson Csf Procede de realisation d'un transistor a effet de champ a metallisation de grille autoalignee
JPS6273676A (ja) * 1985-09-26 1987-04-04 Nec Corp 接合型電界効果トランジスタの製造方法
US4729967A (en) * 1987-04-09 1988-03-08 Gte Laboratories Incorporated Method of fabricating a junction field effect transistor

Also Published As

Publication number Publication date
DE3886871D1 (de) 1994-02-17
US4895811A (en) 1990-01-23
EP0311109A2 (de) 1989-04-12
JPH0195564A (ja) 1989-04-13
EP0311109A3 (en) 1989-07-12
JPH0543291B2 (de) 1993-07-01
EP0311109B1 (de) 1994-01-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)