DE3853392T2 - Verbindungsstruktur eines Halbleiterbauelementes und Verfahren zu ihrer Herstellung. - Google Patents
Verbindungsstruktur eines Halbleiterbauelementes und Verfahren zu ihrer Herstellung.Info
- Publication number
- DE3853392T2 DE3853392T2 DE3853392T DE3853392T DE3853392T2 DE 3853392 T2 DE3853392 T2 DE 3853392T2 DE 3853392 T DE3853392 T DE 3853392T DE 3853392 T DE3853392 T DE 3853392T DE 3853392 T2 DE3853392 T2 DE 3853392T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- connection structure
- semiconductor component
- semiconductor
- component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
- Y10S257/915—Active solid-state devices, e.g. transistors, solid-state diodes with titanium nitride portion or region
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62249329A JPH0719841B2 (ja) | 1987-10-02 | 1987-10-02 | 半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3853392D1 DE3853392D1 (de) | 1995-04-27 |
DE3853392T2 true DE3853392T2 (de) | 1995-09-07 |
Family
ID=17191388
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3853392T Expired - Fee Related DE3853392T2 (de) | 1987-10-02 | 1988-09-30 | Verbindungsstruktur eines Halbleiterbauelementes und Verfahren zu ihrer Herstellung. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4937652A (de) |
EP (1) | EP0310108B1 (de) |
JP (1) | JPH0719841B2 (de) |
KR (1) | KR920001174B1 (de) |
DE (1) | DE3853392T2 (de) |
Families Citing this family (43)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5273937A (en) * | 1988-01-08 | 1993-12-28 | Kabushiki Kaisha Toshiba | Metal semiconductor device and method for producing the same |
JPH0274039A (ja) * | 1988-09-09 | 1990-03-14 | Texas Instr Japan Ltd | 電子回路装置 |
JPH038359A (ja) * | 1989-06-06 | 1991-01-16 | Fujitsu Ltd | 半導体装置の製造方法 |
JPH03142934A (ja) * | 1989-10-30 | 1991-06-18 | Mitsubishi Electric Corp | 半導体集積回路装置の配線接続構造 |
US5365110A (en) * | 1989-11-07 | 1994-11-15 | Kabushiki Kaisha Toshiba | Semiconductor device with multi-layered wiring structure |
KR930000309B1 (ko) * | 1989-11-22 | 1993-01-15 | 삼성전자 주식회사 | 반도체 장치의 제조방법 |
EP0430403B1 (de) | 1989-11-30 | 1998-01-07 | STMicroelectronics, Inc. | Verfahren zum Herstellen von Zwischenschicht-Kontakten |
US5472912A (en) * | 1989-11-30 | 1995-12-05 | Sgs-Thomson Microelectronics, Inc. | Method of making an integrated circuit structure by using a non-conductive plug |
US5108951A (en) * | 1990-11-05 | 1992-04-28 | Sgs-Thomson Microelectronics, Inc. | Method for forming a metal contact |
US6271137B1 (en) | 1989-11-30 | 2001-08-07 | Stmicroelectronics, Inc. | Method of producing an aluminum stacked contact/via for multilayer |
US5658828A (en) * | 1989-11-30 | 1997-08-19 | Sgs-Thomson Microelectronics, Inc. | Method for forming an aluminum contact through an insulating layer |
US6242811B1 (en) | 1989-11-30 | 2001-06-05 | Stmicroelectronics, Inc. | Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature |
US5367179A (en) * | 1990-04-25 | 1994-11-22 | Casio Computer Co., Ltd. | Thin-film transistor having electrodes made of aluminum, and an active matrix panel using same |
JPH088301B2 (ja) * | 1990-06-07 | 1996-01-29 | 株式会社東芝 | 半導体装置の製造方法 |
JP2563652B2 (ja) * | 1990-07-17 | 1996-12-11 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2598335B2 (ja) * | 1990-08-28 | 1997-04-09 | 三菱電機株式会社 | 半導体集積回路装置の配線接続構造およびその製造方法 |
KR960001601B1 (ko) * | 1992-01-23 | 1996-02-02 | 삼성전자주식회사 | 반도체 장치의 접촉구 매몰방법 및 구조 |
DE69102851T2 (de) * | 1990-10-09 | 1995-02-16 | Nec Corp | Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses. |
US6287963B1 (en) | 1990-11-05 | 2001-09-11 | Stmicroelectronics, Inc. | Method for forming a metal contact |
KR920010759A (ko) * | 1990-11-16 | 1992-06-27 | 원본미기재 | 저 저항 접점을 제조하는 방법 |
JP2660359B2 (ja) * | 1991-01-30 | 1997-10-08 | 三菱電機株式会社 | 半導体装置 |
JP3099406B2 (ja) * | 1991-04-05 | 2000-10-16 | ヤマハ株式会社 | 集積回路の多層配線構造 |
JPH0575061A (ja) * | 1991-09-13 | 1993-03-26 | Oki Electric Ind Co Ltd | 半導体記憶装置の配線構造 |
US5200359A (en) * | 1991-10-03 | 1993-04-06 | Micron Technology, Inc. | Method of decreasing contact resistance between a lower elevation aluminum layer and a higher elevation electrically conductive layer |
JPH05206134A (ja) * | 1991-11-12 | 1993-08-13 | Nec Corp | 半導体装置とその製造方法 |
JPH05275540A (ja) * | 1992-03-28 | 1993-10-22 | Yamaha Corp | 集積回路装置 |
JP2885616B2 (ja) * | 1992-07-31 | 1999-04-26 | 株式会社東芝 | 半導体装置およびその製造方法 |
GB9219267D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Manufacture of semiconductor devices |
GB9219281D0 (en) * | 1992-09-11 | 1992-10-28 | Inmos Ltd | Manufacture of semiconductor devices |
EP0594300B1 (de) * | 1992-09-22 | 1998-07-29 | STMicroelectronics, Inc. | Methode zur Herstellung eines Metallkontaktes |
US5365111A (en) * | 1992-12-23 | 1994-11-15 | Advanced Micro Devices, Inc. | Stable local interconnect/active area silicide structure for VLSI applications |
US6690044B1 (en) * | 1993-03-19 | 2004-02-10 | Micron Technology, Inc. | Approach to avoid buckling BPSG by using an intermediate barrier layer |
JP3401843B2 (ja) * | 1993-06-21 | 2003-04-28 | ソニー株式会社 | 半導体装置における多層配線の形成方法 |
JP3599199B2 (ja) * | 1994-08-31 | 2004-12-08 | 富士通株式会社 | 多層配線を有する半導体装置の製造方法 |
US5686761A (en) * | 1995-06-06 | 1997-11-11 | Advanced Micro Devices, Inc. | Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology |
US5899724A (en) * | 1996-05-09 | 1999-05-04 | International Business Machines Corporation | Method for fabricating a titanium resistor |
US5913146A (en) * | 1997-03-18 | 1999-06-15 | Lucent Technologies Inc. | Semiconductor device having aluminum contacts or vias and method of manufacture therefor |
US6274486B1 (en) * | 1998-09-02 | 2001-08-14 | Micron Technology, Inc. | Metal contact and process |
JP3277909B2 (ja) * | 1999-02-08 | 2002-04-22 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP2002223014A (ja) * | 2001-01-26 | 2002-08-09 | Denso Corp | 磁気検出装置 |
US6815818B2 (en) * | 2001-11-19 | 2004-11-09 | Micron Technology, Inc. | Electrode structure for use in an integrated circuit |
KR100573897B1 (ko) * | 2003-12-30 | 2006-04-26 | 동부일렉트로닉스 주식회사 | 반도체 제조 방법 |
JP6040904B2 (ja) * | 2013-09-27 | 2016-12-07 | 豊田合成株式会社 | 半導体装置およびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53121490A (en) * | 1977-03-31 | 1978-10-23 | Toshiba Corp | Semiconductor device |
EP0042926A1 (de) * | 1980-07-01 | 1982-01-06 | Rockwell International Corporation | Aluminium-Aluminium-Ohmsche-Kontakte, Mehrlagen-Zwischenverbindungen |
JPS57208161A (en) * | 1981-06-18 | 1982-12-21 | Fujitsu Ltd | Semiconductor device |
GB2135123B (en) * | 1983-02-10 | 1987-05-20 | Rca Corp | Multi-level metallization structure for semiconductor device and method of making same |
JPS59198734A (ja) * | 1983-04-25 | 1984-11-10 | Mitsubishi Electric Corp | 多層配線構造 |
JPS605560A (ja) * | 1983-06-23 | 1985-01-12 | Fujitsu Ltd | 半導体装置 |
US4507852A (en) * | 1983-09-12 | 1985-04-02 | Rockwell International Corporation | Method for making a reliable ohmic contact between two layers of integrated circuit metallizations |
US4845543A (en) * | 1983-09-28 | 1989-07-04 | Hitachi, Ltd. | Semiconductor device and method of manufacturing the same |
US4742023A (en) * | 1986-08-28 | 1988-05-03 | Fujitsu Limited | Method for producing a semiconductor device |
-
1987
- 1987-10-02 JP JP62249329A patent/JPH0719841B2/ja not_active Expired - Fee Related
-
1988
- 1988-09-29 KR KR1019880012647A patent/KR920001174B1/ko not_active IP Right Cessation
- 1988-09-30 EP EP88116171A patent/EP0310108B1/de not_active Expired - Lifetime
- 1988-09-30 US US07/251,179 patent/US4937652A/en not_active Expired - Lifetime
- 1988-09-30 DE DE3853392T patent/DE3853392T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH0191438A (ja) | 1989-04-11 |
EP0310108B1 (de) | 1995-03-22 |
EP0310108A2 (de) | 1989-04-05 |
EP0310108A3 (de) | 1991-02-06 |
DE3853392D1 (de) | 1995-04-27 |
US4937652A (en) | 1990-06-26 |
KR890007386A (ko) | 1989-06-19 |
KR920001174B1 (ko) | 1992-02-06 |
JPH0719841B2 (ja) | 1995-03-06 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |