DE3530773A1 - Halbleitervorrichtung und verfahren zu ihrer herstellung - Google Patents

Halbleitervorrichtung und verfahren zu ihrer herstellung

Info

Publication number
DE3530773A1
DE3530773A1 DE19853530773 DE3530773A DE3530773A1 DE 3530773 A1 DE3530773 A1 DE 3530773A1 DE 19853530773 DE19853530773 DE 19853530773 DE 3530773 A DE3530773 A DE 3530773A DE 3530773 A1 DE3530773 A1 DE 3530773A1
Authority
DE
Germany
Prior art keywords
groove
semiconductor device
dipl
crystal plane
side wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19853530773
Other languages
German (de)
English (en)
Other versions
DE3530773C2 (enExample
Inventor
Masaaki Tokio/Tokyo Kinugawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3530773A1 publication Critical patent/DE3530773A1/de
Application granted granted Critical
Publication of DE3530773C2 publication Critical patent/DE3530773C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/405—Orientations of crystalline planes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0148—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations comprising introducing impurities in side walls or bottom walls of trenches, e.g. for forming channel stoppers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/973—Substrate orientation

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Element Separation (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
DE19853530773 1984-08-28 1985-08-28 Halbleitervorrichtung und verfahren zu ihrer herstellung Granted DE3530773A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59178646A JPS6156446A (ja) 1984-08-28 1984-08-28 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE3530773A1 true DE3530773A1 (de) 1986-03-06
DE3530773C2 DE3530773C2 (enExample) 1993-09-16

Family

ID=16052099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19853530773 Granted DE3530773A1 (de) 1984-08-28 1985-08-28 Halbleitervorrichtung und verfahren zu ihrer herstellung

Country Status (4)

Country Link
US (1) US4971926A (enExample)
JP (1) JPS6156446A (enExample)
KR (1) KR900008386B1 (enExample)
DE (1) DE3530773A1 (enExample)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542321A1 (de) * 1984-12-05 1986-06-12 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiterspeichereinheit
DE4217420A1 (de) * 1991-05-27 1992-12-03 Mitsubishi Electric Corp Halbleitereinrichtung und verfahren zu deren herstellung
WO1997037386A1 (en) * 1996-04-02 1997-10-09 Advanced Micro Devices, Inc. Field effect transistor with higher mobility
WO1999044237A1 (de) * 1998-02-24 1999-09-02 Siemens Aktiengesellschaft Halbleitervorrichtung und entsprechendes herstellungsverfahren
US8685828B2 (en) 2011-01-14 2014-04-01 Infineon Technologies Ag Method of forming a capacitor
US9012295B2 (en) 2011-02-07 2015-04-21 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293758A (ja) * 1986-06-13 1987-12-21 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
JPH0362568A (ja) * 1989-07-31 1991-03-18 Hitachi Ltd 半導体装置の製造方法
US5539238A (en) * 1992-09-02 1996-07-23 Texas Instruments Incorporated Area efficient high voltage Mosfets with vertical resurf drift regions
US5451809A (en) * 1994-09-07 1995-09-19 Kabushiki Kaisha Toshiba Smooth surface doped silicon film formation
US5714775A (en) * 1995-04-20 1998-02-03 Kabushiki Kaisha Toshiba Power semiconductor device
KR20010071708A (ko) * 1998-07-02 2001-07-31 추후제출 집적 회로, 그의 제조 방법 및 많은 집적 회로를 포함하는웨이퍼
JP2000174148A (ja) 1998-12-09 2000-06-23 Mitsubishi Electric Corp 不揮発性半導体記憶装置およびその製造方法
US6426254B2 (en) * 1999-06-09 2002-07-30 Infineon Technologies Ag Method for expanding trenches by an anisotropic wet etch
US6320215B1 (en) * 1999-07-22 2001-11-20 International Business Machines Corporation Crystal-axis-aligned vertical side wall device
US6362040B1 (en) * 2000-02-09 2002-03-26 Infineon Technologies Ag Reduction of orientation dependent oxidation for vertical sidewalls of semiconductor substrates
US20050090047A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation. Method of making a MOS transistor having improved total radiation-induced leakage current
US20050090073A1 (en) * 2000-12-20 2005-04-28 Actel Corporation, A California Corporation MOS transistor having improved total radiation-induced leakage current
TW499729B (en) * 2001-03-16 2002-08-21 Nanya Technology Corp Method of improving uniformity of oxide layer around trench sidewall and manufacture method of deep trench capacitor
DE10255866B4 (de) * 2002-11-29 2006-11-23 Infineon Technologies Ag Verfahren und Strukturen zur Erhöhung der Strukturdichte und der Speicherkapazität in einem Halbleiterwafer
CN1610117A (zh) * 2003-10-17 2005-04-27 松下电器产业株式会社 半导体装置及其制造方法
DE102004040047B3 (de) * 2004-08-18 2006-02-16 Infineon Technologies Ag Herstellungsverfahren für einen Kondensator
JP2006222379A (ja) * 2005-02-14 2006-08-24 Fuji Film Microdevices Co Ltd 半導体装置およびその製造方法
JP2014165372A (ja) * 2013-02-26 2014-09-08 Toshiba Corp 不揮発性半導体記憶装置
CN103426828A (zh) * 2013-07-12 2013-12-04 上海新储集成电路有限公司 一种基于绝缘体上硅材料的双极型高压cmos单多晶硅填充深沟道器件隔离工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
EP0085988A2 (en) * 1982-02-10 1983-08-17 Hitachi, Ltd. Semiconductor memory and method for fabricating the same

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3785886A (en) * 1971-02-22 1974-01-15 Ibm Semiconductor device fabrication utilizing <100> oriented substrate material
US3965453A (en) * 1974-12-27 1976-06-22 Bell Telephone Laboratories, Incorporated Piezoresistor effects in semiconductor resistors
US4278987A (en) * 1977-10-17 1981-07-14 Hitachi, Ltd. Junction isolated IC with thick EPI portion having sides at least 20 degrees from (110) orientations
US4131496A (en) * 1977-12-15 1978-12-26 Rca Corp. Method of making silicon on sapphire field effect transistors with specifically aligned gates
JPS5559753A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Semiconductor device
DE2949360A1 (de) * 1978-12-08 1980-06-26 Hitachi Ltd Verfahren zur herstellung einer oxidierten isolation fuer integrierte schaltungen
JPS5681968A (en) * 1979-12-07 1981-07-04 Toshiba Corp Manufacture of semiconductor device
US4577208A (en) * 1982-09-23 1986-03-18 Eaton Corporation Bidirectional power FET with integral avalanche protection
JPS5961045A (ja) * 1982-09-29 1984-04-07 Fujitsu Ltd 半導体装置の製造方法
JPS6039862A (ja) * 1983-08-12 1985-03-01 Nippon Telegr & Teleph Corp <Ntt> 半導体記憶装置およびその製造方法
JPS6049633A (ja) * 1983-08-26 1985-03-18 Hitachi Cable Ltd 半導体装置
EP0243609A1 (en) * 1986-04-30 1987-11-04 International Business Machines Corporation Complementary semiconductor device structure and its production
JPS639964A (ja) * 1986-06-30 1988-01-16 Nec Corp 半導体記憶素子製造法
JPS6380561A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置の製造方法
JPS6380562A (ja) * 1986-09-24 1988-04-11 Nec Corp 相補型半導体装置
JPS63148675A (ja) * 1986-12-12 1988-06-21 Toshiba Corp 半導体装置
JPS63197365A (ja) * 1987-02-12 1988-08-16 Matsushita Electric Ind Co Ltd 半導体装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3998674A (en) * 1975-11-24 1976-12-21 International Business Machines Corporation Method for forming recessed regions of thermally oxidized silicon and structures thereof utilizing anisotropic etching
EP0085988A2 (en) * 1982-02-10 1983-08-17 Hitachi, Ltd. Semiconductor memory and method for fabricating the same

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542321A1 (de) * 1984-12-05 1986-06-12 Mitsubishi Denki K.K., Tokio/Tokyo Halbleiterspeichereinheit
US4853348A (en) * 1984-12-05 1989-08-01 Mitsubishi Denki Kabushiki Kaisha Process for manufacture of a semiconductor memory device
DE4217420A1 (de) * 1991-05-27 1992-12-03 Mitsubishi Electric Corp Halbleitereinrichtung und verfahren zu deren herstellung
WO1997037386A1 (en) * 1996-04-02 1997-10-09 Advanced Micro Devices, Inc. Field effect transistor with higher mobility
WO1999044237A1 (de) * 1998-02-24 1999-09-02 Siemens Aktiengesellschaft Halbleitervorrichtung und entsprechendes herstellungsverfahren
US8685828B2 (en) 2011-01-14 2014-04-01 Infineon Technologies Ag Method of forming a capacitor
US9196675B2 (en) 2011-01-14 2015-11-24 Infineon Technologies Ag Capacitor and method of forming a capacitor
US9881991B2 (en) 2011-01-14 2018-01-30 Infineon Technologies Ag Capacitor and method of forming a capacitor
US9012295B2 (en) 2011-02-07 2015-04-21 Infineon Technologies Ag Compressive polycrystalline silicon film and method of manufacture thereof
US9583559B2 (en) 2011-02-07 2017-02-28 Infineon Technologies Ag Capacitor having a top compressive polycrystalline plate

Also Published As

Publication number Publication date
JPS6156446A (ja) 1986-03-22
KR900008386B1 (ko) 1990-11-17
DE3530773C2 (enExample) 1993-09-16
KR860002135A (ko) 1986-03-26
US4971926A (en) 1990-11-20
JPH0554699B2 (enExample) 1993-08-13

Similar Documents

Publication Publication Date Title
DE3530773A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
DE4212829C2 (de) Verfahren zur Herstellung von Metall-Oxid-Halbleiter-Feldeffekttransistoren
DE3037431C2 (enExample)
DE69324880T2 (de) Vertikal-MOSFET mit einem Graben, der mit Mehrschichten-Gatefilm bedeckt ist
DE60132994T2 (de) Verfahren zur herstellung eines leistungs-mosfets
DE69021419T2 (de) Halbleiterspeicheranordnung mit einem ferroelektrischen Material.
DE4437068C2 (de) Dünnfilmtransistor und Verfahren zu seiner Herstellung
DE4215708C2 (de) SRAM und Verfahren zu dessen Herstellung
DE2512373B2 (de) Isolierschicht-Feldeffekttransistor mit tiefer Verarmungszone
DE4208537C2 (de) MOS-FET-Struktur und Verfahren zu deren Herstellung
DE2502235A1 (de) Ladungskopplungs-halbleiteranordnung
DE19531629C1 (de) Verfahren zur Herstellung einer EEPROM-Halbleiterstruktur
DE3525396A1 (de) Vertical mosfet und verfahren zu seiner herstellung
DE19535140A1 (de) Lateraler MOSFET mit hoher Stehspannung und einem Graben sowie Verfahren zu dessen Herstellung
DE10124413A1 (de) Halbleiter-Vorrichtung und Verfahren zur Herstellung derselben
DE3225398A1 (de) Halbleitervorrichtung und verfahren zu ihrer herstellung
DE3937502A1 (de) Halbleitervorrichtung mit einem feldabschirmelement und verfahren zu deren herstellung
DE19501557A1 (de) Halbleitervorrichtung und Verfahren zu deren Herstellung
DE69231484T2 (de) Verfahren zur Herstellung von Isolationszonen des LOCOS-Typs für integrierte Schaltungen vom MOS-Typ
DE19653219A1 (de) Halbleiterbauelement und Herstellungsverfahren dafür
DE3540422A1 (de) Verfahren zum herstellen integrierter strukturen mit nicht-fluechtigen speicherzellen, die selbst-ausgerichtete siliciumschichten und dazugehoerige transistoren aufweisen
DE19835891B4 (de) Verfahren zur Herstellung eines Transistors
DE3927176C2 (enExample)
DE2932928A1 (de) Verfahren zur herstellung von vlsi-schaltungen
DE3851815T2 (de) Feldeffekttransistor und dessen Herstellungsmethode.

Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)