JPS5559753A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5559753A JPS5559753A JP13162978A JP13162978A JPS5559753A JP S5559753 A JPS5559753 A JP S5559753A JP 13162978 A JP13162978 A JP 13162978A JP 13162978 A JP13162978 A JP 13162978A JP S5559753 A JPS5559753 A JP S5559753A
- Authority
- JP
- Japan
- Prior art keywords
- type
- axis
- layer
- main surface
- resistance layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000002955 isolation Methods 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0802—Resistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE:To lessen resistance regulation, by arranging semiconductor resistors along an axis inclining at an angle of approximate 45 deg. from a [110] axis in one main surface of a semiconductor monocrystal substrate of a Si monolithic-IC, etc. or an axis crossing at right agles with the axis. CONSTITUTION:An N-type Si layer 2 is grown on a main surface of a monocrystal P-type Si substrate 1, which uses a [110] crystal plane as a main surface, in an epitaxial shape, and an N-type resistance layer 5 is formed by making up a P-type isolation region 4. A P-type resistance layer 3 is built up by diffusing P-type impurities into the N-type epitaxial layer. The Si substrate has orientation flat in the b1 direction shown in the figure or in the b2 direction rectangular to b1 direction. The N-type resistance layer 5 is formed in the direction that the longitudinal direction is parallel or rectangular to the b1 or b2 direction, and the P-type resistance layer 3 is made up in the direction that tilts at an angle of 45 deg. in these direction. Thus, the variation of resistance value due to stress in case of assembly and molding can be eliminated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13162978A JPS5559753A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13162978A JPS5559753A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5559753A true JPS5559753A (en) | 1980-05-06 |
JPS639380B2 JPS639380B2 (en) | 1988-02-29 |
Family
ID=15062508
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13162978A Granted JPS5559753A (en) | 1978-10-27 | 1978-10-27 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5559753A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02144960A (en) * | 1988-11-28 | 1990-06-04 | Matsushita Electron Corp | Semiconductor resistance device |
US4971926A (en) * | 1984-08-28 | 1990-11-20 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5028794A (en) * | 1973-07-13 | 1975-03-24 |
-
1978
- 1978-10-27 JP JP13162978A patent/JPS5559753A/en active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5028794A (en) * | 1973-07-13 | 1975-03-24 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4971926A (en) * | 1984-08-28 | 1990-11-20 | Kabushiki Kaisha Toshiba | Method of manufacturing a semiconductor device |
JPH02144960A (en) * | 1988-11-28 | 1990-06-04 | Matsushita Electron Corp | Semiconductor resistance device |
Also Published As
Publication number | Publication date |
---|---|
JPS639380B2 (en) | 1988-02-29 |
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