JPS5534441A - Preparation of semiconductor crystal substrate - Google Patents

Preparation of semiconductor crystal substrate

Info

Publication number
JPS5534441A
JPS5534441A JP10666678A JP10666678A JPS5534441A JP S5534441 A JPS5534441 A JP S5534441A JP 10666678 A JP10666678 A JP 10666678A JP 10666678 A JP10666678 A JP 10666678A JP S5534441 A JPS5534441 A JP S5534441A
Authority
JP
Japan
Prior art keywords
inp
layers
crystal
crystal substrate
ingaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10666678A
Other languages
Japanese (ja)
Inventor
Kenzo Akita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP10666678A priority Critical patent/JPS5534441A/en
Publication of JPS5534441A publication Critical patent/JPS5534441A/en
Pending legal-status Critical Current

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Photovoltaic Devices (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE: To facilitate the mass production of InP crystal substrates, by successively growing the second semiconductor crystal layers, which chemical properties differ from an InP crystal substrate, and InP layers on the InP crystal substrate in epitaxial shapes, and by corroding only the second layers.
CONSTITUTION: Crystal thin layers, which chemical properties differ from InP and which crystal lattice constant resembles InP, such as, InGaAs, etc. are grown on an InP crystal substrate surface with 300μ thickness in epitaxial shapes. For example, InP layers 1, 3, 5 and InGaAs layers 2, 4 are alternately grown, only the InGaAs crystal layers are corroded and InP epitaxial layers are separated. Thus, a large number of InP substrates can be obtained, and solar cells can be mass-produced by forming PN junction by diffusing impurities on these InP substrates.
COPYRIGHT: (C)1980,JPO&Japio
JP10666678A 1978-08-31 1978-08-31 Preparation of semiconductor crystal substrate Pending JPS5534441A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10666678A JPS5534441A (en) 1978-08-31 1978-08-31 Preparation of semiconductor crystal substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10666678A JPS5534441A (en) 1978-08-31 1978-08-31 Preparation of semiconductor crystal substrate

Publications (1)

Publication Number Publication Date
JPS5534441A true JPS5534441A (en) 1980-03-11

Family

ID=14439392

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10666678A Pending JPS5534441A (en) 1978-08-31 1978-08-31 Preparation of semiconductor crystal substrate

Country Status (1)

Country Link
JP (1) JPS5534441A (en)

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