DE3002492A1 - Nicht selbstloeschende speichereinrichtung und verfahren zum betrieb dieser einrichtung - Google Patents
Nicht selbstloeschende speichereinrichtung und verfahren zum betrieb dieser einrichtungInfo
- Publication number
- DE3002492A1 DE3002492A1 DE19803002492 DE3002492A DE3002492A1 DE 3002492 A1 DE3002492 A1 DE 3002492A1 DE 19803002492 DE19803002492 DE 19803002492 DE 3002492 A DE3002492 A DE 3002492A DE 3002492 A1 DE3002492 A1 DE 3002492A1
- Authority
- DE
- Germany
- Prior art keywords
- self
- erasing
- floating gate
- memory cell
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000003860 storage Methods 0.000 title claims description 47
- 238000000034 method Methods 0.000 title claims description 14
- 210000004027 cell Anatomy 0.000 claims description 169
- 238000007667 floating Methods 0.000 claims description 123
- 230000015654 memory Effects 0.000 claims description 108
- 230000003068 static effect Effects 0.000 claims description 54
- 239000000758 substrate Substances 0.000 claims description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 29
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 230000008878 coupling Effects 0.000 claims description 24
- 238000010168 coupling process Methods 0.000 claims description 24
- 238000005859 coupling reaction Methods 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 22
- 238000012546 transfer Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 11
- 210000000352 storage cell Anatomy 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 40
- 238000004519 manufacturing process Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- 230000005641 tunneling Effects 0.000 description 8
- 230000000295 complement effect Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000007423 decrease Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000010276 construction Methods 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000010327 methods by industry Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3002492A1 true DE3002492A1 (de) | 1980-07-31 |
| DE3002492C2 DE3002492C2 (nl) | 1990-12-20 |
Family
ID=21718940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803002492 Granted DE3002492A1 (de) | 1979-01-24 | 1980-01-24 | Nicht selbstloeschende speichereinrichtung und verfahren zum betrieb dieser einrichtung |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS55101192A (nl) |
| KR (1) | KR830001767B1 (nl) |
| BE (1) | BE881329A (nl) |
| DE (1) | DE3002492A1 (nl) |
| FR (1) | FR2447587B1 (nl) |
| GB (1) | GB2042296B (nl) |
| NL (1) | NL192015C (nl) |
| SE (1) | SE8000392L (nl) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0025054A1 (en) * | 1979-03-13 | 1981-03-18 | Ncr Corporation | Static volatile/non-volatile ram system |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
| JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
| JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
| JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ｒａｍ |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
| JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
| JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
| DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/nl not_active IP Right Cessation
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0025054A1 (en) * | 1979-03-13 | 1981-03-18 | Ncr Corporation | Static volatile/non-volatile ram system |
| EP0025054A4 (en) * | 1979-03-13 | 1981-10-13 | Ncr Corp | STATIC VOLATILE / NON-VOLATILE RAM SYSTEM. |
Also Published As
| Publication number | Publication date |
|---|---|
| GB2042296B (en) | 1983-05-11 |
| BE881329A (fr) | 1980-05-16 |
| GB2042296A (en) | 1980-09-17 |
| DE3002492C2 (nl) | 1990-12-20 |
| FR2447587B1 (fr) | 1986-02-28 |
| NL192015B (nl) | 1996-08-01 |
| KR830001767B1 (ko) | 1983-09-03 |
| FR2447587A1 (fr) | 1980-08-22 |
| JPS55101192A (en) | 1980-08-01 |
| SE8000392L (sv) | 1980-07-25 |
| NL8000435A (nl) | 1980-07-28 |
| NL192015C (nl) | 1996-12-03 |
| JPH0115959B2 (nl) | 1989-03-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G11C 17/06 |
|
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition |