SE8000392L - Minnesanordning - Google Patents

Minnesanordning

Info

Publication number
SE8000392L
SE8000392L SE8000392A SE8000392A SE8000392L SE 8000392 L SE8000392 L SE 8000392L SE 8000392 A SE8000392 A SE 8000392A SE 8000392 A SE8000392 A SE 8000392A SE 8000392 L SE8000392 L SE 8000392L
Authority
SE
Sweden
Prior art keywords
cell
nonvolatile
ram cell
nonvolatile memory
ram
Prior art date
Application number
SE8000392A
Other languages
English (en)
Swedish (sv)
Inventor
R T Simko
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor Inc filed Critical Xicor Inc
Publication of SE8000392L publication Critical patent/SE8000392L/

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
SE8000392A 1979-01-24 1980-01-17 Minnesanordning SE8000392L (sv)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (1)

Publication Number Publication Date
SE8000392L true SE8000392L (sv) 1980-07-25

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8000392A SE8000392L (sv) 1979-01-24 1980-01-17 Minnesanordning

Country Status (8)

Country Link
JP (1) JPS55101192A ( )
KR (1) KR830001767B1 ( )
BE (1) BE881329A ( )
DE (1) DE3002492A1 ( )
FR (1) FR2447587B1 ( )
GB (1) GB2042296B ( )
NL (1) NL192015C ( )
SE (1) SE8000392L ( )

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
JPS56500109A ( ) * 1979-03-13 1981-02-05
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
JPH0638502B2 (ja) * 1984-06-13 1994-05-18 セイコー電子工業株式会社 不揮発性ｒａｍ
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH07120716B2 (ja) * 1985-03-30 1995-12-20 株式会社東芝 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
DE3002492A1 (de) 1980-07-31
GB2042296B (en) 1983-05-11
NL192015C (nl) 1996-12-03
KR830001767B1 (ko) 1983-09-03
NL192015B (nl) 1996-08-01
GB2042296A (en) 1980-09-17
BE881329A (fr) 1980-05-16
JPS55101192A (en) 1980-08-01
FR2447587B1 (fr) 1986-02-28
DE3002492C2 ( ) 1990-12-20
FR2447587A1 (fr) 1980-08-22
NL8000435A (nl) 1980-07-28
JPH0115959B2 ( ) 1989-03-22

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