SE8000392L - memory device - Google Patents
memory deviceInfo
- Publication number
- SE8000392L SE8000392L SE8000392A SE8000392A SE8000392L SE 8000392 L SE8000392 L SE 8000392L SE 8000392 A SE8000392 A SE 8000392A SE 8000392 A SE8000392 A SE 8000392A SE 8000392 L SE8000392 L SE 8000392L
- Authority
- SE
- Sweden
- Prior art keywords
- cell
- nonvolatile
- ram cell
- nonvolatile memory
- ram
- Prior art date
Links
- 230000003068 static effect Effects 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Abstract
Nonvolatile, semiconductor random access memory cells comprising a static, RAM cell and a nonvolatile memory element which may be interconnected with the static random-access memory cell by capacitative coupling, such that the RAM cell contents may be directly copied to the nonvolatile element, and such that the nonvolatile memory cell contents will be copied to the RAM cell upon applying power to the RAM cell. The nonvolatile memory element may be a substrate-coupled floating gate cell incorporating self-regulated and asperity enhanced tunnel currents. <IMAGE>
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (1)
Publication Number | Publication Date |
---|---|
SE8000392L true SE8000392L (en) | 1980-07-25 |
Family
ID=21718940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE8000392A SE8000392L (en) | 1979-01-24 | 1980-01-17 | memory device |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS55101192A (en) |
KR (1) | KR830001767B1 (en) |
BE (1) | BE881329A (en) |
DE (1) | DE3002492A1 (en) |
FR (1) | FR2447587B1 (en) |
GB (1) | GB2042296B (en) |
NL (1) | NL192015C (en) |
SE (1) | SE8000392L (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
WO1980001965A1 (en) * | 1979-03-13 | 1980-09-18 | Ncr Co | Static volatile/non-volatile ram system |
JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
JPS60185297A (en) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | Non-volatile random access memory device |
US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
JPH0638502B2 (en) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | Non-volatile RAM |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
JPH07120716B2 (en) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | Semiconductor memory device |
JPS61225860A (en) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | Semiconductor memory device |
JPH01214993A (en) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | Data storage device |
DE10211337B4 (en) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Circuit arrangement and method of operating a circuit arrangement |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/en not_active Application Discontinuation
- 1980-01-23 NL NL8000435A patent/NL192015C/en not_active IP Right Cessation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/en not_active Expired
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/en active Granted
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/en active
- 1980-01-24 BE BE0/199093A patent/BE881329A/en not_active IP Right Cessation
- 1980-01-24 JP JP738980A patent/JPS55101192A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2447587A1 (en) | 1980-08-22 |
BE881329A (en) | 1980-05-16 |
DE3002492C2 (en) | 1990-12-20 |
FR2447587B1 (en) | 1986-02-28 |
KR830001767B1 (en) | 1983-09-03 |
GB2042296A (en) | 1980-09-17 |
JPH0115959B2 (en) | 1989-03-22 |
NL8000435A (en) | 1980-07-28 |
NL192015B (en) | 1996-08-01 |
JPS55101192A (en) | 1980-08-01 |
DE3002492A1 (en) | 1980-07-31 |
GB2042296B (en) | 1983-05-11 |
NL192015C (en) | 1996-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SE8000393L (en) | SET AND DEVICE AT THE SEMICONDUCTOR MEMORY | |
SE8000392L (en) | memory device | |
SE7907382L (en) | NON-VOLUME MEMORY DEVICE | |
JPS52106280A (en) | Semiconductor transistor memory cell | |
IT1209227B (en) | ELECTRICALLY ALTERABLE FLOATING 'GATE' MEMORY CELL. | |
KR850004687A (en) | Semiconductor memory device that can be replaced with an extra cell | |
NL7704931A (en) | CAPACITIVE MEMORY CELL. | |
DE3485822D1 (en) | SEMICONDUCTOR STORAGE DEVICE WITH FLOATING GATE ELECTRODE. | |
IT8025973A0 (en) | IMPROVED MEMORY CELL. | |
ATA77077A (en) | MODULE SWITCHING ON, THE MEMORY TRANSISTORS MADE OF BINAER ARE BUILT WITH A FLOATING GATE | |
DE3176699D1 (en) | NON-VOLATILE SEMICONDUCTOR MEMORY CELL | |
SE7714156L (en) | RAM MEMORY WITH DIFFERENT FIELD POWER TRANSISTORS | |
NL145978B (en) | MEMORY CELL WITH AN ELECTRONIC BISTABLE MEMORY ELEMENT. | |
DE3065982D1 (en) | Semiconductor memory device using one transistor memory cell | |
DE3378438D1 (en) | Electric nonvolatile word-programmable memory and use of such a memory | |
NL7703260A (en) | MEMORY WITH DUMMY CELLS. | |
NL7702919A (en) | FOAMENOL RESIN WITH CLOSED CELLS. | |
DE3174565D1 (en) | NON-VOLATILE STATIC SEMICONDUCTOR MEMORY CELL | |
NL7808079A (en) | SEMICONDUCTION DEVICE USING MEMORY CELLS WITH SIDEWALL LOAD STORAGE AREAS. | |
JPS5213782A (en) | Semiconductor non-vol atile memory unit | |
DK119986B (en) | Depolarization layer for use in an activatable primary cell. | |
JPS5335337A (en) | Tetrode transistor memory logic cell | |
ATE29795T1 (en) | STATIC STORAGE CELL. | |
JPS5429985A (en) | Semiconductor nonvolatile memory device | |
IT8024530A0 (en) | STATIC MEMORY CELL AND MEMORY CREATED WITH THE USE OF SUCH CELLS. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
NAV | Patent application has lapsed |
Ref document number: 8000392-4 Format of ref document f/p: F |