JPS5792865A - Manufacture of semiconductor memory device - Google Patents

Manufacture of semiconductor memory device

Info

Publication number
JPS5792865A
JPS5792865A JP55168616A JP16861680A JPS5792865A JP S5792865 A JPS5792865 A JP S5792865A JP 55168616 A JP55168616 A JP 55168616A JP 16861680 A JP16861680 A JP 16861680A JP S5792865 A JPS5792865 A JP S5792865A
Authority
JP
Japan
Prior art keywords
gate
erasing
oxide film
film
poly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP55168616A
Other languages
Japanese (ja)
Other versions
JPS6225273B2 (en
Inventor
Fujio Masuoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP55168616A priority Critical patent/JPS5792865A/en
Priority to EP81305349A priority patent/EP0052982B1/en
Priority to DE8181305349T priority patent/DE3175125D1/en
Priority to US06/321,322 priority patent/US4803529A/en
Publication of JPS5792865A publication Critical patent/JPS5792865A/en
Publication of JPS6225273B2 publication Critical patent/JPS6225273B2/ja
Priority to US07/193,079 priority patent/US4910565A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Abstract

PURPOSE:To obtain an electrically-erasing PROM with a single FET, by disposing a field insulating film in a designated region on an Si-substrate, providing an erasing gate on the film, covering with insulant, extending a floating gate over a gate oxide film, piling up partially, forming a control gate with insulant, and connecting the erasing gates with each other. CONSTITUTION:A field oxide film 13 is selectively formed in a designated region on a P type Si-substrate 11. An erasing gate layer 14 of poly Si is made only on the film 13. A poly-Si-stray gate 15 is selectively made by covering with a thermal oxide film 16, extending over a gate oxide film 12, and piling up partially with an erasing gate 14. Next, a poly-Si-control gate 18 is selectively formed to cover the stray gate via a thermal oxide film 17. Finally, a source S, a drain D, and an erasing gate EG are connected with each other. This constitution makes a memory cell with a single FET and yet electrically erasable. A device of high integration can be obtained with adaption of P-ROM.
JP55168616A 1980-11-20 1980-11-29 Manufacture of semiconductor memory device Granted JPS5792865A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP55168616A JPS5792865A (en) 1980-11-29 1980-11-29 Manufacture of semiconductor memory device
EP81305349A EP0052982B1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
DE8181305349T DE3175125D1 (en) 1980-11-20 1981-11-11 Semiconductor memory device and method for manufacturing the same
US06/321,322 US4803529A (en) 1980-11-20 1981-11-13 Electrically erasable and electrically programmable read only memory
US07/193,079 US4910565A (en) 1980-11-20 1988-05-12 Electrically erasable and electrically programmable read-only memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168616A JPS5792865A (en) 1980-11-29 1980-11-29 Manufacture of semiconductor memory device

Publications (2)

Publication Number Publication Date
JPS5792865A true JPS5792865A (en) 1982-06-09
JPS6225273B2 JPS6225273B2 (en) 1987-06-02

Family

ID=15871354

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168616A Granted JPS5792865A (en) 1980-11-20 1980-11-29 Manufacture of semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS5792865A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62227870A (en) * 1986-03-31 1987-10-06 Mazda Motor Corp Four wheel steering device for vehicle

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS55163932A (en) * 1979-06-08 1980-12-20 Toshiba Corp Data switching system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55101192A (en) * 1979-01-24 1980-08-01 Xicor Inc Method and unit for nonnvolatile memory
JPS55163932A (en) * 1979-06-08 1980-12-20 Toshiba Corp Data switching system

Also Published As

Publication number Publication date
JPS6225273B2 (en) 1987-06-02

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