NL192015C - Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device. - Google Patents
Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device.Info
- Publication number
- NL192015C NL192015C NL8000435A NL8000435A NL192015C NL 192015 C NL192015 C NL 192015C NL 8000435 A NL8000435 A NL 8000435A NL 8000435 A NL8000435 A NL 8000435A NL 192015 C NL192015 C NL 192015C
- Authority
- NL
- Netherlands
- Prior art keywords
- memory device
- volatile
- well
- free access
- binary information
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US602979 | 1979-01-24 | ||
US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (3)
Publication Number | Publication Date |
---|---|
NL8000435A NL8000435A (en) | 1980-07-28 |
NL192015B NL192015B (en) | 1996-08-01 |
NL192015C true NL192015C (en) | 1996-12-03 |
Family
ID=21718940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL8000435A NL192015C (en) | 1979-01-24 | 1980-01-23 | Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device. |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS55101192A (en) |
KR (1) | KR830001767B1 (en) |
BE (1) | BE881329A (en) |
DE (1) | DE3002492A1 (en) |
FR (1) | FR2447587B1 (en) |
GB (1) | GB2042296B (en) |
NL (1) | NL192015C (en) |
SE (1) | SE8000392L (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
WO1980001965A1 (en) * | 1979-03-13 | 1980-09-18 | Ncr Co | Static volatile/non-volatile ram system |
JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
JPS60185297A (en) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | Non-volatile random access memory device |
US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
JPH0638502B2 (en) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | Non-volatile RAM |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
JPH07120716B2 (en) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | Semiconductor memory device |
JPS61225860A (en) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | Semiconductor memory device |
JPH01214993A (en) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | Data storage device |
DE10211337B4 (en) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Circuit arrangement and method of operating a circuit arrangement |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/en not_active Application Discontinuation
- 1980-01-23 NL NL8000435A patent/NL192015C/en not_active IP Right Cessation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/en not_active Expired
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/en active Granted
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/en active
- 1980-01-24 BE BE0/199093A patent/BE881329A/en not_active IP Right Cessation
- 1980-01-24 JP JP738980A patent/JPS55101192A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
FR2447587A1 (en) | 1980-08-22 |
SE8000392L (en) | 1980-07-25 |
BE881329A (en) | 1980-05-16 |
DE3002492C2 (en) | 1990-12-20 |
FR2447587B1 (en) | 1986-02-28 |
KR830001767B1 (en) | 1983-09-03 |
GB2042296A (en) | 1980-09-17 |
JPH0115959B2 (en) | 1989-03-22 |
NL8000435A (en) | 1980-07-28 |
NL192015B (en) | 1996-08-01 |
JPS55101192A (en) | 1980-08-01 |
DE3002492A1 (en) | 1980-07-31 |
GB2042296B (en) | 1983-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
BT | A document has been added to the application laid open to public inspection | ||
A85 | Still pending on 85-01-01 | ||
BA | A request for search or an international-type search has been filed | ||
BB | A search report has been drawn up | ||
BC | A request for examination has been filed | ||
V4 | Lapsed because of reaching the maximum lifetime of a patent |
Free format text: 20000123 |