NL192015B - Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device. - Google Patents

Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device.

Info

Publication number
NL192015B
NL192015B NL8000435A NL8000435A NL192015B NL 192015 B NL192015 B NL 192015B NL 8000435 A NL8000435 A NL 8000435A NL 8000435 A NL8000435 A NL 8000435A NL 192015 B NL192015 B NL 192015B
Authority
NL
Netherlands
Prior art keywords
memory device
volatile
well
free access
binary information
Prior art date
Application number
NL8000435A
Other languages
Dutch (nl)
Other versions
NL8000435A (en
NL192015C (en
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor Inc filed Critical Xicor Inc
Publication of NL8000435A publication Critical patent/NL8000435A/en
Publication of NL192015B publication Critical patent/NL192015B/en
Application granted granted Critical
Publication of NL192015C publication Critical patent/NL192015C/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
NL8000435A 1979-01-24 1980-01-23 Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device. NL192015C (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices
US602979 1979-01-24

Publications (3)

Publication Number Publication Date
NL8000435A NL8000435A (en) 1980-07-28
NL192015B true NL192015B (en) 1996-08-01
NL192015C NL192015C (en) 1996-12-03

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8000435A NL192015C (en) 1979-01-24 1980-01-23 Non-volatile memory device with free access, as well as a method for non-volatile storage of binary information in such a memory device.

Country Status (8)

Country Link
JP (1) JPS55101192A (en)
KR (1) KR830001767B1 (en)
BE (1) BE881329A (en)
DE (1) DE3002492A1 (en)
FR (1) FR2447587B1 (en)
GB (1) GB2042296B (en)
NL (1) NL192015C (en)
SE (1) SE8000392L (en)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
WO1980001965A1 (en) * 1979-03-13 1980-09-18 Ncr Co Static volatile/non-volatile ram system
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPS60185297A (en) * 1984-03-02 1985-09-20 Fujitsu Ltd Non-volatile random access memory device
JPH0638502B2 (en) * 1984-06-13 1994-05-18 セイコー電子工業株式会社 Non-volatile RAM
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH07120716B2 (en) * 1985-03-30 1995-12-20 株式会社東芝 Semiconductor memory device
JPS61225860A (en) * 1985-03-30 1986-10-07 Toshiba Corp Semiconductor memory device
JPH01214993A (en) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd Data storage device
DE10211337B4 (en) * 2002-03-14 2009-12-31 Infineon Technologies Ag Circuit arrangement and method of operating a circuit arrangement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
DE3002492A1 (en) 1980-07-31
GB2042296B (en) 1983-05-11
BE881329A (en) 1980-05-16
GB2042296A (en) 1980-09-17
DE3002492C2 (en) 1990-12-20
FR2447587B1 (en) 1986-02-28
KR830001767B1 (en) 1983-09-03
FR2447587A1 (en) 1980-08-22
JPS55101192A (en) 1980-08-01
SE8000392L (en) 1980-07-25
NL8000435A (en) 1980-07-28
NL192015C (en) 1996-12-03
JPH0115959B2 (en) 1989-03-22

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Legal Events

Date Code Title Description
BT A document has been added to the application laid open to public inspection
A85 Still pending on 85-01-01
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
V4 Lapsed because of reaching the maximum lifetime of a patent

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