FR2447587B1 - Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant - Google Patents

Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant

Info

Publication number
FR2447587B1
FR2447587B1 FR8001399A FR8001399A FR2447587B1 FR 2447587 B1 FR2447587 B1 FR 2447587B1 FR 8001399 A FR8001399 A FR 8001399A FR 8001399 A FR8001399 A FR 8001399A FR 2447587 B1 FR2447587 B1 FR 2447587B1
Authority
FR
France
Prior art keywords
evanescent
static
access
memory device
corresponding memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR8001399A
Other languages
English (en)
Other versions
FR2447587A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor LLC filed Critical Xicor LLC
Publication of FR2447587A1 publication Critical patent/FR2447587A1/fr
Application granted granted Critical
Publication of FR2447587B1 publication Critical patent/FR2447587B1/fr
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
FR8001399A 1979-01-24 1980-01-23 Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant Expired FR2447587B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (2)

Publication Number Publication Date
FR2447587A1 FR2447587A1 (fr) 1980-08-22
FR2447587B1 true FR2447587B1 (fr) 1986-02-28

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
FR8001399A Expired FR2447587B1 (fr) 1979-01-24 1980-01-23 Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant

Country Status (8)

Country Link
JP (1) JPS55101192A (fr)
KR (1) KR830001767B1 (fr)
BE (1) BE881329A (fr)
DE (1) DE3002492A1 (fr)
FR (1) FR2447587B1 (fr)
GB (1) GB2042296B (fr)
NL (1) NL192015C (fr)
SE (1) SE8000392L (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
JPS56500109A (fr) * 1979-03-13 1981-02-05
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPH0638502B2 (ja) * 1984-06-13 1994-05-18 セイコー電子工業株式会社 不揮発性ｒａｍ
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH07120716B2 (ja) * 1985-03-30 1995-12-20 株式会社東芝 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
DE3002492A1 (de) 1980-07-31
GB2042296B (en) 1983-05-11
NL8000435A (nl) 1980-07-28
JPH0115959B2 (fr) 1989-03-22
JPS55101192A (en) 1980-08-01
NL192015C (nl) 1996-12-03
DE3002492C2 (fr) 1990-12-20
SE8000392L (sv) 1980-07-25
KR830001767B1 (ko) 1983-09-03
GB2042296A (en) 1980-09-17
FR2447587A1 (fr) 1980-08-22
NL192015B (nl) 1996-08-01
BE881329A (fr) 1980-05-16

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