FR2447587B1 - Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant - Google Patents
Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondantInfo
- Publication number
- FR2447587B1 FR2447587B1 FR8001399A FR8001399A FR2447587B1 FR 2447587 B1 FR2447587 B1 FR 2447587B1 FR 8001399 A FR8001399 A FR 8001399A FR 8001399 A FR8001399 A FR 8001399A FR 2447587 B1 FR2447587 B1 FR 2447587B1
- Authority
- FR
- France
- Prior art keywords
- evanescent
- static
- access
- memory device
- corresponding memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003068 static effect Effects 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2447587A1 FR2447587A1 (fr) | 1980-08-22 |
| FR2447587B1 true FR2447587B1 (fr) | 1986-02-28 |
Family
ID=21718940
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8001399A Expired FR2447587B1 (fr) | 1979-01-24 | 1980-01-23 | Procede de mise en memoire a acces direct, statique et non evanescente, et dispositif de memoire correspondant |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS55101192A (fr) |
| KR (1) | KR830001767B1 (fr) |
| BE (1) | BE881329A (fr) |
| DE (1) | DE3002492A1 (fr) |
| FR (1) | FR2447587B1 (fr) |
| GB (1) | GB2042296B (fr) |
| NL (1) | NL192015C (fr) |
| SE (1) | SE8000392L (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
| WO1980001965A1 (fr) * | 1979-03-13 | 1980-09-18 | Ncr Co | Systeme ram statique non-remanent/remanent |
| JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
| US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
| JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
| JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
| GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
| JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
| US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
| JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ｒａｍ |
| US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
| JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
| JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
| JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
| DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
| US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
| US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/xx not_active IP Right Cessation
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko active
Also Published As
| Publication number | Publication date |
|---|---|
| NL192015C (nl) | 1996-12-03 |
| DE3002492A1 (de) | 1980-07-31 |
| GB2042296B (en) | 1983-05-11 |
| FR2447587A1 (fr) | 1980-08-22 |
| JPH0115959B2 (fr) | 1989-03-22 |
| BE881329A (fr) | 1980-05-16 |
| KR830001767B1 (ko) | 1983-09-03 |
| NL192015B (nl) | 1996-08-01 |
| JPS55101192A (en) | 1980-08-01 |
| DE3002492C2 (fr) | 1990-12-20 |
| NL8000435A (nl) | 1980-07-28 |
| SE8000392L (sv) | 1980-07-25 |
| GB2042296A (en) | 1980-09-17 |
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