JPS55101192A - Method and unit for nonnvolatile memory - Google Patents

Method and unit for nonnvolatile memory

Info

Publication number
JPS55101192A
JPS55101192A JP738980A JP738980A JPS55101192A JP S55101192 A JPS55101192 A JP S55101192A JP 738980 A JP738980 A JP 738980A JP 738980 A JP738980 A JP 738980A JP S55101192 A JPS55101192 A JP S55101192A
Authority
JP
Japan
Prior art keywords
nonnvolatile
memory
unit
nonnvolatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP738980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0115959B2 (fr
Inventor
Toomasu Shimuko Richiyaado
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xicor LLC
Original Assignee
Xicor LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor LLC filed Critical Xicor LLC
Publication of JPS55101192A publication Critical patent/JPS55101192A/ja
Publication of JPH0115959B2 publication Critical patent/JPH0115959B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
JP738980A 1979-01-24 1980-01-24 Method and unit for nonnvolatile memory Granted JPS55101192A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (2)

Publication Number Publication Date
JPS55101192A true JPS55101192A (en) 1980-08-01
JPH0115959B2 JPH0115959B2 (fr) 1989-03-22

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
JP738980A Granted JPS55101192A (en) 1979-01-24 1980-01-24 Method and unit for nonnvolatile memory

Country Status (8)

Country Link
JP (1) JPS55101192A (fr)
KR (1) KR830001767B1 (fr)
BE (1) BE881329A (fr)
DE (1) DE3002492A1 (fr)
FR (1) FR2447587B1 (fr)
GB (1) GB2042296B (fr)
NL (1) NL192015C (fr)
SE (1) SE8000392L (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS57147282A (en) * 1981-02-02 1982-09-11 Zaikoru Inc Nonvolatile rewritable floating gate memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
JPS611058A (ja) * 1984-06-13 1986-01-07 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
JPS61225862A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56500109A (fr) * 1979-03-13 1981-02-05
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6225273B2 (fr) * 1980-11-29 1987-06-02 Tokyo Shibaura Electric Co
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
JPS6226597B2 (fr) * 1980-11-29 1987-06-09 Tokyo Shibaura Electric Co
JPS57147282A (en) * 1981-02-02 1982-09-11 Zaikoru Inc Nonvolatile rewritable floating gate memory
JPH0343792B2 (fr) * 1981-02-02 1991-07-03 Xicor Inc
JPH0130314B2 (fr) * 1981-06-03 1989-06-19 Tokyo Shibaura Electric Co
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
JPH0379800B2 (fr) * 1984-03-02 1991-12-19 Fujitsu Ltd
JPS611058A (ja) * 1984-06-13 1986-01-07 Seiko Instr & Electronics Ltd 不揮発性ｒａｍ
JPS61225862A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPH0560267B2 (fr) * 1985-03-30 1993-09-01 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
DE3002492A1 (de) 1980-07-31
GB2042296B (en) 1983-05-11
NL8000435A (nl) 1980-07-28
JPH0115959B2 (fr) 1989-03-22
FR2447587B1 (fr) 1986-02-28
NL192015C (nl) 1996-12-03
DE3002492C2 (fr) 1990-12-20
SE8000392L (sv) 1980-07-25
KR830001767B1 (ko) 1983-09-03
GB2042296A (en) 1980-09-17
FR2447587A1 (fr) 1980-08-22
NL192015B (nl) 1996-08-01
BE881329A (fr) 1980-05-16

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