BE881329A - Procede d'acces a une memoire remanente a acces direct et dispositif de memoire - Google Patents

Procede d'acces a une memoire remanente a acces direct et dispositif de memoire

Info

Publication number
BE881329A
BE881329A BE0/199093A BE199093A BE881329A BE 881329 A BE881329 A BE 881329A BE 0/199093 A BE0/199093 A BE 0/199093A BE 199093 A BE199093 A BE 199093A BE 881329 A BE881329 A BE 881329A
Authority
BE
Belgium
Prior art keywords
memory
access
remanent
memory device
access method
Prior art date
Application number
BE0/199093A
Other languages
English (en)
Inventor
R Simko
Original Assignee
Xicor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US06/006,029 external-priority patent/US4300212A/en
Application filed by Xicor Inc filed Critical Xicor Inc
Publication of BE881329A publication Critical patent/BE881329A/fr

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
BE0/199093A 1979-01-24 1980-01-24 Procede d'acces a une memoire remanente a acces direct et dispositif de memoire BE881329A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/006,029 US4300212A (en) 1979-01-24 1979-01-24 Nonvolatile static random access memory devices

Publications (1)

Publication Number Publication Date
BE881329A true BE881329A (fr) 1980-05-16

Family

ID=21718940

Family Applications (1)

Application Number Title Priority Date Filing Date
BE0/199093A BE881329A (fr) 1979-01-24 1980-01-24 Procede d'acces a une memoire remanente a acces direct et dispositif de memoire

Country Status (8)

Country Link
JP (1) JPS55101192A (fr)
KR (1) KR830001767B1 (fr)
BE (1) BE881329A (fr)
DE (1) DE3002492A1 (fr)
FR (1) FR2447587B1 (fr)
GB (1) GB2042296B (fr)
NL (1) NL192015C (fr)
SE (1) SE8000392L (fr)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4486769A (en) * 1979-01-24 1984-12-04 Xicor, Inc. Dense nonvolatile electrically-alterable memory device with substrate coupling electrode
WO1980001965A1 (fr) * 1979-03-13 1980-09-18 Ncr Co Systeme ram statique non-remanent/remanent
JPS57199265A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
JPS57199264A (en) * 1981-06-03 1982-12-07 Toshiba Corp Semiconductor memory
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS5792490A (en) * 1980-11-29 1982-06-09 Toshiba Corp Semiconductor storage device
JPS5792865A (en) * 1980-11-29 1982-06-09 Toshiba Corp Manufacture of semiconductor memory device
GB2094086B (en) * 1981-03-03 1985-08-14 Tokyo Shibaura Electric Co Non-volatile semiconductor memory system
JPS60185297A (ja) * 1984-03-02 1985-09-20 Fujitsu Ltd 不揮発性ランダムアクセスメモリ装置
US4630238A (en) * 1983-10-14 1986-12-16 Fujitsu Limited Semiconductor memory device
JPH0638502B2 (ja) * 1984-06-13 1994-05-18 セイコー電子工業株式会社 不揮発性ｒａｍ
US4616245A (en) * 1984-10-29 1986-10-07 Ncr Corporation Direct-write silicon nitride EEPROM cell
JPH07120716B2 (ja) * 1985-03-30 1995-12-20 株式会社東芝 半導体記憶装置
JPS61225860A (ja) * 1985-03-30 1986-10-07 Toshiba Corp 半導体記憶装置
JPH01214993A (ja) * 1988-02-23 1989-08-29 Nissan Motor Co Ltd データ記憶装置
DE10211337B4 (de) * 2002-03-14 2009-12-31 Infineon Technologies Ag Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4070655A (en) * 1976-11-05 1978-01-24 The United States Of America As Represented By The Secretary Of The Air Force Virtually nonvolatile static random access memory device
US4099196A (en) * 1977-06-29 1978-07-04 Intel Corporation Triple layer polysilicon cell
US4128773A (en) * 1977-11-07 1978-12-05 Hughes Aircraft Company Volatile/non-volatile logic latch circuit

Also Published As

Publication number Publication date
NL192015C (nl) 1996-12-03
DE3002492A1 (de) 1980-07-31
GB2042296B (en) 1983-05-11
FR2447587A1 (fr) 1980-08-22
JPH0115959B2 (fr) 1989-03-22
KR830001767B1 (ko) 1983-09-03
NL192015B (nl) 1996-08-01
JPS55101192A (en) 1980-08-01
DE3002492C2 (fr) 1990-12-20
NL8000435A (nl) 1980-07-28
SE8000392L (sv) 1980-07-25
GB2042296A (en) 1980-09-17
FR2447587B1 (fr) 1986-02-28

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Legal Events

Date Code Title Description
RE Patent lapsed

Owner name: XICOR INC.

Effective date: 19850124