JPS6225273B2 - - Google Patents
Info
- Publication number
- JPS6225273B2 JPS6225273B2 JP55168616A JP16861680A JPS6225273B2 JP S6225273 B2 JPS6225273 B2 JP S6225273B2 JP 55168616 A JP55168616 A JP 55168616A JP 16861680 A JP16861680 A JP 16861680A JP S6225273 B2 JPS6225273 B2 JP S6225273B2
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- layer
- gate
- conductor layer
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004020 conductor Substances 0.000 claims description 40
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 12
- 229920005591 polysilicon Polymers 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000003647 oxidation Effects 0.000 claims description 4
- 238000007254 oxidation reaction Methods 0.000 claims description 4
- 238000003860 storage Methods 0.000 claims description 2
- 238000001259 photo etching Methods 0.000 claims 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 239000012535 impurity Substances 0.000 claims 1
- 230000010354 integration Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55168616A JPS5792865A (en) | 1980-11-29 | 1980-11-29 | Manufacture of semiconductor memory device |
| EP81305349A EP0052982B1 (fr) | 1980-11-20 | 1981-11-11 | Dispositif semiconducteur à mémoire et procédé de fabrication |
| DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
| US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55168616A JPS5792865A (en) | 1980-11-29 | 1980-11-29 | Manufacture of semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792865A JPS5792865A (en) | 1982-06-09 |
| JPS6225273B2 true JPS6225273B2 (fr) | 1987-06-02 |
Family
ID=15871354
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55168616A Granted JPS5792865A (en) | 1980-11-20 | 1980-11-29 | Manufacture of semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792865A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62227870A (ja) * | 1986-03-31 | 1987-10-06 | Mazda Motor Corp | 車両の４輪操舵装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS55163932A (en) * | 1979-06-08 | 1980-12-20 | Toshiba Corp | Data switching system |
-
1980
- 1980-11-29 JP JP55168616A patent/JPS5792865A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS55163932A (en) * | 1979-06-08 | 1980-12-20 | Toshiba Corp | Data switching system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62227870A (ja) * | 1986-03-31 | 1987-10-06 | Mazda Motor Corp | 車両の４輪操舵装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5792865A (en) | 1982-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4612212A (en) | Method for manufacturing E2 PROM | |
| US4803529A (en) | Electrically erasable and electrically programmable read only memory | |
| US4466081A (en) | Semiconductor memory device | |
| KR100271407B1 (ko) | 불휘발성 반도체 메모리와 그 제조방법 및 사용 방법 | |
| US5708285A (en) | Non-volatile semiconductor information storage device | |
| JPS6034199B2 (ja) | 半導体記憶装置 | |
| US4437172A (en) | Semiconductor memory device | |
| US4437174A (en) | Semiconductor memory device | |
| KR920007193A (ko) | 반도체 기억장치 | |
| JPH08306810A (ja) | 不揮発性記憶装置の製造方法 | |
| JP2582412B2 (ja) | 不揮発性半導体記憶装置 | |
| JPS6226596B2 (fr) | ||
| JPS6226597B2 (fr) | ||
| JPS6225273B2 (fr) | ||
| JPS6226595B2 (fr) | ||
| JPS623994B2 (fr) | ||
| JPS6139752B2 (fr) | ||
| JPS6331114B2 (fr) | ||
| JPS6139753B2 (fr) | ||
| JPS6225274B2 (fr) | ||
| JP3178427B2 (ja) | 半導体記憶装置 | |
| JPH0150116B2 (fr) | ||
| JPS623991B2 (fr) | ||
| JPS6331113B2 (fr) | ||
| JPS6152555B2 (fr) |