JPS6139752B2 - - Google Patents
Info
- Publication number
- JPS6139752B2 JPS6139752B2 JP55163931A JP16393180A JPS6139752B2 JP S6139752 B2 JPS6139752 B2 JP S6139752B2 JP 55163931 A JP55163931 A JP 55163931A JP 16393180 A JP16393180 A JP 16393180A JP S6139752 B2 JPS6139752 B2 JP S6139752B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- erase
- insulating film
- memory cell
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 18
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 229920005591 polysilicon Polymers 0.000 claims description 10
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 33
- 239000004020 conductor Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000206 photolithography Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000002784 hot electron Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163931A JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
EP81305349A EP0052982B1 (fr) | 1980-11-20 | 1981-11-11 | Dispositif semiconducteur à mémoire et procédé de fabrication |
US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55163931A JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5787163A JPS5787163A (en) | 1982-05-31 |
JPS6139752B2 true JPS6139752B2 (fr) | 1986-09-05 |
Family
ID=15783540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55163931A Granted JPS5787163A (en) | 1980-11-20 | 1980-11-20 | Semiconductor memory storage |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5787163A (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7907451B2 (en) | 2008-12-08 | 2011-03-15 | Empire Technology Development Llc | Semiconductor storage device and method of manufacturing same |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0644630B2 (ja) * | 1987-04-24 | 1994-06-08 | 株式会社東芝 | 不揮発性半導体メモリ |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106275A (en) * | 1976-03-03 | 1977-09-06 | Nec Corp | Floating type nonvoltile semiconductor memory element |
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
-
1980
- 1980-11-20 JP JP55163931A patent/JPS5787163A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS52106275A (en) * | 1976-03-03 | 1977-09-06 | Nec Corp | Floating type nonvoltile semiconductor memory element |
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7907451B2 (en) | 2008-12-08 | 2011-03-15 | Empire Technology Development Llc | Semiconductor storage device and method of manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JPS5787163A (en) | 1982-05-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US4612212A (en) | Method for manufacturing E2 PROM | |
US4466081A (en) | Semiconductor memory device | |
JP3192861B2 (ja) | 不揮発性半導体記憶装置 | |
US5422844A (en) | Memory array with field oxide islands eliminated and method | |
US7333367B2 (en) | Flash memory devices including multiple dummy cell array regions | |
JP2862584B2 (ja) | 不揮発性半導体メモリ装置 | |
JPS6034199B2 (ja) | 半導体記憶装置 | |
JPH10510124A (ja) | 2トランジスタ無消費電力型の電気的書き換え可能な不揮発性ラッチ素子 | |
KR19980018057A (ko) | 불 휘발성 반도체 메모리 장치 | |
EP0054355A2 (fr) | Dispositif semiconducteur à mémoire | |
US4527259A (en) | Semiconductor device having insulated gate type non-volatile semiconductor memory elements | |
US4437174A (en) | Semiconductor memory device | |
EP0136771A2 (fr) | Dispositif de mémoire semi-conductrice non-volatile | |
JPS6139752B2 (fr) | ||
JPS623994B2 (fr) | ||
JPS6226596B2 (fr) | ||
JPS6226597B2 (fr) | ||
JP3210373B2 (ja) | 不揮発性半導体記憶装置 | |
JPS6139753B2 (fr) | ||
JPS6226595B2 (fr) | ||
JPS6225274B2 (fr) | ||
JPS6225273B2 (fr) | ||
JP3178427B2 (ja) | 半導体記憶装置 | |
JPS6331114B2 (fr) | ||
JPS623991B2 (fr) |