JPS6226595B2 - - Google Patents
Info
- Publication number
- JPS6226595B2 JPS6226595B2 JP16861780A JP16861780A JPS6226595B2 JP S6226595 B2 JPS6226595 B2 JP S6226595B2 JP 16861780 A JP16861780 A JP 16861780A JP 16861780 A JP16861780 A JP 16861780A JP S6226595 B2 JPS6226595 B2 JP S6226595B2
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- erase
- data
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 33
- 239000000758 substrate Substances 0.000 claims description 22
- 239000004020 conductor Substances 0.000 description 37
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 229920005591 polysilicon Polymers 0.000 description 9
- 230000010354 integration Effects 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000013500 data storage Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16861780A JPS5792866A (en) | 1980-11-29 | 1980-11-29 | Semiconductor memory device |
| DE8181305349T DE3175125D1 (en) | 1980-11-20 | 1981-11-11 | Semiconductor memory device and method for manufacturing the same |
| EP81305349A EP0052982B1 (fr) | 1980-11-20 | 1981-11-11 | Dispositif semiconducteur à mémoire et procédé de fabrication |
| US06/321,322 US4803529A (en) | 1980-11-20 | 1981-11-13 | Electrically erasable and electrically programmable read only memory |
| US07/193,079 US4910565A (en) | 1980-11-20 | 1988-05-12 | Electrically erasable and electrically programmable read-only memory |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16861780A JPS5792866A (en) | 1980-11-29 | 1980-11-29 | Semiconductor memory device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5792866A JPS5792866A (en) | 1982-06-09 |
| JPS6226595B2 true JPS6226595B2 (fr) | 1987-06-09 |
Family
ID=15871373
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16861780A Granted JPS5792866A (en) | 1980-11-20 | 1980-11-29 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5792866A (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS644894U (fr) * | 1987-06-30 | 1989-01-12 |
-
1980
- 1980-11-29 JP JP16861780A patent/JPS5792866A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS644894U (fr) * | 1987-06-30 | 1989-01-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5792866A (en) | 1982-06-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4612212A (en) | Method for manufacturing E2 PROM | |
| US4803529A (en) | Electrically erasable and electrically programmable read only memory | |
| US4466081A (en) | Semiconductor memory device | |
| KR100204342B1 (ko) | 불 휘발성 반도체 메모리 장치 | |
| JPS6034199B2 (ja) | 半導体記憶装置 | |
| US4437172A (en) | Semiconductor memory device | |
| JPH10510124A (ja) | ２トランジスタ無消費電力型の電気的書き換え可能な不揮発性ラッチ素子 | |
| JPH03295097A (ja) | 不揮発性半導体記憶装置 | |
| KR960016106B1 (ko) | 비 휘발성 반도체 메모리 장치 | |
| US4437174A (en) | Semiconductor memory device | |
| US4630087A (en) | Nonvolatile semiconductor memory device | |
| JPH02223097A (ja) | 不揮発性半導体メモリ装置 | |
| JPS6226596B2 (fr) | ||
| JPS6226597B2 (fr) | ||
| JPS623994B2 (fr) | ||
| JPS6226595B2 (fr) | ||
| JPS6225273B2 (fr) | ||
| JPS6139752B2 (fr) | ||
| JPS6331114B2 (fr) | ||
| JPH0150116B2 (fr) | ||
| JPS6331113B2 (fr) | ||
| JPS6225274B2 (fr) | ||
| JPS6139753B2 (fr) | ||
| JPS6152555B2 (fr) | ||
| JPS623991B2 (fr) |