JPS623994B2 - - Google Patents
Info
- Publication number
- JPS623994B2 JPS623994B2 JP17291680A JP17291680A JPS623994B2 JP S623994 B2 JPS623994 B2 JP S623994B2 JP 17291680 A JP17291680 A JP 17291680A JP 17291680 A JP17291680 A JP 17291680A JP S623994 B2 JPS623994 B2 JP S623994B2
- Authority
- JP
- Japan
- Prior art keywords
- erase
- gate
- insulating film
- data
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 58
- 239000000758 substrate Substances 0.000 claims description 33
- 239000011159 matrix material Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 59
- 210000004027 cell Anatomy 0.000 description 50
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920005591 polysilicon Polymers 0.000 description 16
- 238000010586 diagram Methods 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 230000010354 integration Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 210000004460 N cell Anatomy 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17291680A JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
| EP81305348A EP0054355B1 (fr) | 1980-12-08 | 1981-11-11 | Dispositif semiconducteur à mémoire |
| DE8181305348T DE3174417D1 (en) | 1980-12-08 | 1981-11-11 | Semiconductor memory device |
| US06/321,320 US4437172A (en) | 1980-12-08 | 1981-11-13 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17291680A JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5798191A JPS5798191A (en) | 1982-06-18 |
| JPS623994B2 true JPS623994B2 (fr) | 1987-01-28 |
Family
ID=15950720
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17291680A Granted JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5798191A (fr) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH073693B2 (ja) * | 1986-05-20 | 1995-01-18 | 日本電信電話株式会社 | 光ビ−ムのアクセス制御装置 |
| US5719805A (en) * | 1987-04-24 | 1998-02-17 | Kabushiki Kaisha Toshiba | Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units |
| US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
| US5245566A (en) * | 1987-04-24 | 1993-09-14 | Fujio Masuoka | Programmable semiconductor |
| JPH0191395A (ja) * | 1987-10-01 | 1989-04-11 | Toshiba Corp | 不揮発性半導体メモリ |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS507441A (fr) * | 1973-05-18 | 1975-01-25 | ||
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
-
1980
- 1980-12-08 JP JP17291680A patent/JPS5798191A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS507441A (fr) * | 1973-05-18 | 1975-01-25 | ||
| JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5798191A (en) | 1982-06-18 |
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