JPS5798191A - Semiconductor storage device - Google Patents
Semiconductor storage deviceInfo
- Publication number
- JPS5798191A JPS5798191A JP17291680A JP17291680A JPS5798191A JP S5798191 A JPS5798191 A JP S5798191A JP 17291680 A JP17291680 A JP 17291680A JP 17291680 A JP17291680 A JP 17291680A JP S5798191 A JPS5798191 A JP S5798191A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- erase
- insulating film
- cells
- row
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17291680A JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
DE8181305348T DE3174417D1 (en) | 1980-12-08 | 1981-11-11 | Semiconductor memory device |
EP81305348A EP0054355B1 (en) | 1980-12-08 | 1981-11-11 | Semiconductor memory device |
US06/321,320 US4437172A (en) | 1980-12-08 | 1981-11-13 | Semiconductor memory device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17291680A JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5798191A true JPS5798191A (en) | 1982-06-18 |
JPS623994B2 JPS623994B2 (ja) | 1987-01-28 |
Family
ID=15950720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17291680A Granted JPS5798191A (en) | 1980-12-08 | 1980-12-08 | Semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5798191A (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62271229A (ja) * | 1986-05-20 | 1987-11-25 | Nippon Telegr & Teleph Corp <Ntt> | 光ビ−ムのアクセス制御装置 |
JPH0191395A (ja) * | 1987-10-01 | 1989-04-11 | Toshiba Corp | 不揮発性半導体メモリ |
US5245566A (en) * | 1987-04-24 | 1993-09-14 | Fujio Masuoka | Programmable semiconductor |
US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5719805A (en) * | 1987-04-24 | 1998-02-17 | Kabushiki Kaisha Toshiba | Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507441A (ja) * | 1973-05-18 | 1975-01-25 | ||
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
-
1980
- 1980-12-08 JP JP17291680A patent/JPS5798191A/ja active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS507441A (ja) * | 1973-05-18 | 1975-01-25 | ||
JPS5513901A (en) * | 1978-07-17 | 1980-01-31 | Hitachi Ltd | Fixed memory of semiconductor |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62271229A (ja) * | 1986-05-20 | 1987-11-25 | Nippon Telegr & Teleph Corp <Ntt> | 光ビ−ムのアクセス制御装置 |
JPH073693B2 (ja) * | 1986-05-20 | 1995-01-18 | 日本電信電話株式会社 | 光ビ−ムのアクセス制御装置 |
US5245566A (en) * | 1987-04-24 | 1993-09-14 | Fujio Masuoka | Programmable semiconductor |
US5313420A (en) * | 1987-04-24 | 1994-05-17 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US5719805A (en) * | 1987-04-24 | 1998-02-17 | Kabushiki Kaisha Toshiba | Electrically programmable non-volatile semiconductor memory including series connected memory cells and decoder circuitry for applying a ground voltage to non-selected circuit units |
US5812453A (en) * | 1987-04-24 | 1998-09-22 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory |
US6434043B2 (en) | 1987-04-24 | 2002-08-13 | Kabushiki Kaisha Toshiba | Programmable semiconductor memory array having series-connected memory |
JPH0191395A (ja) * | 1987-10-01 | 1989-04-11 | Toshiba Corp | 不揮発性半導体メモリ |
Also Published As
Publication number | Publication date |
---|---|
JPS623994B2 (ja) | 1987-01-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW328179B (en) | Non-volatile semiconductor memory device | |
EP0052566A3 (en) | Electrically erasable programmable read-only memory | |
EP0083194A3 (en) | Electrically erasable programmable read only memory cell having a single transistor | |
JPS648593A (en) | Semiconductor storage device | |
ES8204209A1 (es) | Una instalacion de memoria mejorada de transistor de efecto de campo | |
EP0616334A4 (en) | Non-volatile semiconductor memory device with a floating gate. | |
JPS6425394A (en) | Nonvolatile semiconductor memory device | |
EP0320916A3 (en) | Electrically erasable and programmable read only memory using stacked-gate cell | |
EP0361972A3 (en) | Non-volatile semiconductor memory device with nand type memory cell arrays | |
KR910005313A (ko) | 메모리블럭으로 분할된 메모리셀 어레이를 갖는 전기적 소거 가능한 반도체 불휘발성 기억장치 | |
DE3160505D1 (en) | Semi-conductor floating gate memory cell with write and erase electrodes | |
KR920017118A (ko) | 불휘발성 반도체 기억장치 | |
US5894438A (en) | Method for programming and erasing a memory cell of a flash memory device | |
JPS5798191A (en) | Semiconductor storage device | |
JPS5769584A (en) | Non-volatile semiconductor memory | |
JPS5647992A (en) | Nonvolatile semiconductor memory | |
JPS55105374A (en) | Nonvolatile semiconductor memory | |
JPS57105890A (en) | Semiconductor storage device | |
JPS5798193A (en) | Semiconductor storage device | |
WO1988002174A3 (en) | Nonvolatile memory cell array | |
JPS5798192A (en) | Semiconductor storage device | |
JPS5798190A (en) | Semiconductor storage device | |
KR20010061509A (ko) | 플래쉬 메모리 소자의 소거 방법 | |
JPS52104078A (en) | Semiconductor unit | |
JPS5792489A (en) | Semiconductor storage device |