ES8204209A1 - Una instalacion de memoria mejorada de transistor de efecto de campo - Google Patents
Una instalacion de memoria mejorada de transistor de efecto de campoInfo
- Publication number
- ES8204209A1 ES8204209A1 ES502489A ES502489A ES8204209A1 ES 8204209 A1 ES8204209 A1 ES 8204209A1 ES 502489 A ES502489 A ES 502489A ES 502489 A ES502489 A ES 502489A ES 8204209 A1 ES8204209 A1 ES 8204209A1
- Authority
- ES
- Spain
- Prior art keywords
- floating gate
- disposed
- gate
- control
- cells
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000009977 dual effect Effects 0.000 abstract 2
- 230000005669 field effect Effects 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000007599 discharging Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7882—Programmable transistors with only two possible levels of programmation charging by injection of carriers through a conductive insulator, e.g. Poole-Frankel conduction
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
INSTALACION DE MEMORIA O SISTEMA DE ALMACENAMIENTO DE RANSISTORES DE EFECTO DE CAMPO QUE PUEDE UTILIZARSE EN MEMORIAS FIJAS, PROGRAMABLES Y BORRABLES ELECTRICAMENTE, O EN MEMORIAS ESTABLES DE ACCESO ALEATORIO. CONSTA DE UN TRANSMISOR DE EFECTO DE CAMPO (10), QUE COMPRENDE UN ELECTRODO DE CONTROL FLOTANTE (22) Y UN PRIMER (26) Y SEGUNDO (30) ELECTRODOS DE CONTROL; DE UN INYECTOR DE CARGA (28) DISPUESTO ENTRE EL PRIMER ELECTRODO DE CONTROL (26) Y DICHO ELECTRODO DE CONTROL FLOTANTE (22); DE UN CONDENSADOR DISPUESTO ENTRE EL SEGUNDO ELECTRODO DE CONTROL (30) Y DICHO ELECTRODO DE CONTROL FLOTANTE (22), Y DE MEDIOS QUE APLICAN IMPULSOS DE CONTROL AL SEGUNDO ELECTRODO DE CONTROL (30) PARA CONTROLAR LA CARGA PRESENTE EN DICHO ELECTRODO DE CONTROL FLORANTE (22).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/153,359 US4334292A (en) | 1980-05-27 | 1980-05-27 | Low voltage electrically erasable programmable read only memory |
Publications (2)
Publication Number | Publication Date |
---|---|
ES502489A0 ES502489A0 (es) | 1982-04-01 |
ES8204209A1 true ES8204209A1 (es) | 1982-04-01 |
Family
ID=22546878
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES502489A Expired ES8204209A1 (es) | 1980-05-27 | 1981-05-26 | Una instalacion de memoria mejorada de transistor de efecto de campo |
Country Status (8)
Country | Link |
---|---|
US (1) | US4334292A (es) |
EP (1) | EP0040701B1 (es) |
JP (1) | JPS5710977A (es) |
AU (1) | AU540886B2 (es) |
BR (1) | BR8103000A (es) |
CA (1) | CA1149064A (es) |
DE (1) | DE3176835D1 (es) |
ES (1) | ES8204209A1 (es) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4380057A (en) * | 1980-10-27 | 1983-04-12 | International Business Machines Corporation | Electrically alterable double dense memory |
JPS57204172A (en) * | 1981-06-08 | 1982-12-14 | Ibm | Field effect transistor |
US4939559A (en) * | 1981-12-14 | 1990-07-03 | International Business Machines Corporation | Dual electron injector structures using a conductive oxide between injectors |
US4535349A (en) * | 1981-12-31 | 1985-08-13 | International Business Machines Corporation | Non-volatile memory cell using a crystalline storage element with capacitively coupled sensing |
JPS5960797A (ja) * | 1982-09-30 | 1984-04-06 | Toshiba Corp | 不揮発性半導体メモリ装置 |
JPS59110215U (ja) * | 1983-01-13 | 1984-07-25 | サンデン株式会社 | 車輌用空気調和装置の制御回路 |
US4795719A (en) * | 1984-05-15 | 1989-01-03 | Waferscale Integration, Inc. | Self-aligned split gate eprom process |
US4868629A (en) * | 1984-05-15 | 1989-09-19 | Waferscale Integration, Inc. | Self-aligned split gate EPROM |
US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
JPS6113671A (ja) * | 1984-06-25 | 1986-01-21 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | メモリのチヤ−ジ記憶構造 |
US4717943A (en) * | 1984-06-25 | 1988-01-05 | International Business Machines | Charge storage structure for nonvolatile memories |
US4665417A (en) * | 1984-09-27 | 1987-05-12 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
US4729115A (en) * | 1984-09-27 | 1988-03-01 | International Business Machines Corporation | Non-volatile dynamic random access memory cell |
JPS6180866A (ja) * | 1984-09-27 | 1986-04-24 | インタ−ナショナル ビジネス マシ−ンズ コ−ポレ−ション | 不揮発性半導体メモリ・セル |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
US4665503A (en) * | 1985-01-15 | 1987-05-12 | Massachusetts Institute Of Technology | Non-volatile memory devices |
US4861976A (en) * | 1988-06-06 | 1989-08-29 | American Telephone And Telegraph Company, At&T Bell Laboratories | Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer |
KR920001402B1 (ko) * | 1988-11-29 | 1992-02-13 | 삼성전자 주식회사 | 불휘발성 반도체 기억소자 |
US5258095A (en) * | 1989-01-20 | 1993-11-02 | Fujitsu Limited | Method for producing a device having an insulator sandwiched between two semiconductor layers |
JPH0777240B2 (ja) * | 1989-01-20 | 1995-08-16 | 富士通株式会社 | 半導体装置の製造方法 |
ATE101752T1 (de) * | 1989-03-31 | 1994-03-15 | Philips Nv | Eprom, der eine mehrfache verwendung der bitleitungskontakte ermoeglicht. |
US5122985A (en) * | 1990-04-16 | 1992-06-16 | Giovani Santin | Circuit and method for erasing eeprom memory arrays to prevent over-erased cells |
JPH05102438A (ja) * | 1991-10-04 | 1993-04-23 | Mitsubishi Electric Corp | 不揮発性半導体記憶装置 |
US5138576A (en) * | 1991-11-06 | 1992-08-11 | Altera Corporation | Method and apparatus for erasing an array of electrically erasable EPROM cells |
US5359571A (en) * | 1993-01-27 | 1994-10-25 | Yu Shih Chiang | Memory array having a plurality of address partitions |
KR0149528B1 (ko) * | 1994-05-25 | 1998-10-01 | 김주용 | 반도체 소자의 콘트롤 게이트 전극 형성방법 |
US5818082A (en) * | 1996-03-04 | 1998-10-06 | Advanced Micro Devices, Inc. | E2 PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof |
US5703809A (en) * | 1996-10-01 | 1997-12-30 | Microchip Technology Incorporated | Overcharge/discharge voltage regulator for EPROM memory array |
US7569882B2 (en) * | 2003-12-23 | 2009-08-04 | Interuniversitair Microelektronica Centrum (Imec) | Non-volatile multibit memory cell and method of manufacturing thereof |
US7092288B2 (en) | 2004-02-04 | 2006-08-15 | Atmel Corporation | Non-volatile memory array with simultaneous write and erase feature |
US7020020B1 (en) * | 2004-09-21 | 2006-03-28 | Atmel Corporation | Low voltage non-volatile memory cells using twin bit line current sensing |
US7414460B1 (en) | 2006-03-31 | 2008-08-19 | Integrated Device Technology, Inc. | System and method for integrated circuit charge recycling |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3825946A (en) * | 1971-01-15 | 1974-07-23 | Intel Corp | Electrically alterable floating gate device and method for altering same |
US3972059A (en) * | 1973-12-28 | 1976-07-27 | International Business Machines Corporation | Dielectric diode, fabrication thereof, and charge store memory therewith |
JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
US4161039A (en) * | 1976-12-15 | 1979-07-10 | Siemens Aktiengesellschaft | N-Channel storage FET |
US4104675A (en) * | 1977-06-21 | 1978-08-01 | International Business Machines Corporation | Moderate field hole and electron injection from one interface of MIM or MIS structures |
US4274012A (en) * | 1979-01-24 | 1981-06-16 | Xicor, Inc. | Substrate coupled floating gate memory cell |
-
1980
- 1980-05-27 US US06/153,359 patent/US4334292A/en not_active Expired - Lifetime
-
1981
- 1981-03-10 CA CA000372695A patent/CA1149064A/en not_active Expired
- 1981-04-10 JP JP5306181A patent/JPS5710977A/ja active Granted
- 1981-04-28 DE DE8181103165T patent/DE3176835D1/de not_active Expired
- 1981-04-28 EP EP81103165A patent/EP0040701B1/en not_active Expired
- 1981-05-01 AU AU70075/81A patent/AU540886B2/en not_active Ceased
- 1981-05-14 BR BR8103000A patent/BR8103000A/pt unknown
- 1981-05-26 ES ES502489A patent/ES8204209A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
EP0040701A1 (en) | 1981-12-02 |
ES502489A0 (es) | 1982-04-01 |
US4334292A (en) | 1982-06-08 |
AU7007581A (en) | 1981-12-03 |
DE3176835D1 (en) | 1988-09-08 |
EP0040701B1 (en) | 1988-08-03 |
BR8103000A (pt) | 1982-02-02 |
AU540886B2 (en) | 1984-12-06 |
JPS5710977A (en) | 1982-01-20 |
CA1149064A (en) | 1983-06-28 |
JPH0130313B2 (es) | 1989-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
FD1A | Patent lapsed |
Effective date: 19971201 |