JPH0560267B2 - - Google Patents
Info
- Publication number
- JPH0560267B2 JPH0560267B2 JP60066755A JP6675585A JPH0560267B2 JP H0560267 B2 JPH0560267 B2 JP H0560267B2 JP 60066755 A JP60066755 A JP 60066755A JP 6675585 A JP6675585 A JP 6675585A JP H0560267 B2 JPH0560267 B2 JP H0560267B2
- Authority
- JP
- Japan
- Prior art keywords
- diffusion region
- gate
- mos transistor
- insulating film
- floating gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000009792 diffusion process Methods 0.000 claims description 29
- 238000013500 data storage Methods 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 12
- 230000005641 tunneling Effects 0.000 claims description 6
- 239000010410 layer Substances 0.000 description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000005684 electric field Effects 0.000 description 9
- 230000010354 integration Effects 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000009825 accumulation Methods 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60066755A JPS61225860A (ja) | 1985-03-30 | 1985-03-30 | 半導体記憶装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60066755A JPS61225860A (ja) | 1985-03-30 | 1985-03-30 | 半導体記憶装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61225860A JPS61225860A (ja) | 1986-10-07 |
| JPH0560267B2 true JPH0560267B2 (fr) | 1993-09-01 |
Family
ID=13325014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60066755A Granted JPS61225860A (ja) | 1985-03-30 | 1985-03-30 | 半導体記憶装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61225860A (fr) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2529885B2 (ja) * | 1989-03-10 | 1996-09-04 | 工業技術院長 | 半導体メモリ及びその動作方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS5715470A (en) * | 1980-06-30 | 1982-01-26 | Ibm | Electrically programmable/erasable mos memory cell |
-
1985
- 1985-03-30 JP JP60066755A patent/JPS61225860A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS51117838A (en) * | 1975-04-10 | 1976-10-16 | Shindengen Electric Mfg Co Ltd | Semiconductor memory device |
| JPS55101192A (en) * | 1979-01-24 | 1980-08-01 | Xicor Inc | Method and unit for nonnvolatile memory |
| JPS5715470A (en) * | 1980-06-30 | 1982-01-26 | Ibm | Electrically programmable/erasable mos memory cell |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS61225860A (ja) | 1986-10-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |