KR830001767B1 - 비소멸성 정지형 등속호출 기억장치 - Google Patents
비소멸성 정지형 등속호출 기억장치 Download PDFInfo
- Publication number
- KR830001767B1 KR830001767B1 KR1019800000256A KR800000256A KR830001767B1 KR 830001767 B1 KR830001767 B1 KR 830001767B1 KR 1019800000256 A KR1019800000256 A KR 1019800000256A KR 800000256 A KR800000256 A KR 800000256A KR 830001767 B1 KR830001767 B1 KR 830001767B1
- Authority
- KR
- South Korea
- Prior art keywords
- destructive
- floating gate
- memory
- ram
- capacitor
- Prior art date
Links
- 230000015654 memory Effects 0.000 title claims description 66
- 238000007667 floating Methods 0.000 claims description 103
- 230000001066 destructive effect Effects 0.000 claims description 85
- 239000012634 fragment Substances 0.000 claims description 46
- 238000003860 storage Methods 0.000 claims description 37
- 239000004065 semiconductor Substances 0.000 claims description 19
- 230000008878 coupling Effects 0.000 claims description 14
- 238000010168 coupling process Methods 0.000 claims description 14
- 238000005859 coupling reaction Methods 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 5
- 230000003362 replicative effect Effects 0.000 claims 1
- 239000003990 capacitor Substances 0.000 description 48
- 239000000758 substrate Substances 0.000 description 35
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 27
- 229920005591 polysilicon Polymers 0.000 description 26
- 230000005641 tunneling Effects 0.000 description 12
- 230000003068 static effect Effects 0.000 description 10
- 230000008033 biological extinction Effects 0.000 description 9
- 238000005520 cutting process Methods 0.000 description 9
- 238000007796 conventional method Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000009825 accumulation Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 230000008034 disappearance Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000010791 quenching Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000027756 respiratory electron transport chain Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 206010073306 Exposure to radiation Diseases 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000010076 replication Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/006,029 US4300212A (en) | 1979-01-24 | 1979-01-24 | Nonvolatile static random access memory devices |
US6029 | 2001-12-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR830001767B1 true KR830001767B1 (ko) | 1983-09-03 |
Family
ID=21718940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019800000256A KR830001767B1 (ko) | 1979-01-24 | 1980-01-24 | 비소멸성 정지형 등속호출 기억장치 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JPS55101192A (nl) |
KR (1) | KR830001767B1 (nl) |
BE (1) | BE881329A (nl) |
DE (1) | DE3002492A1 (nl) |
FR (1) | FR2447587B1 (nl) |
GB (1) | GB2042296B (nl) |
NL (1) | NL192015C (nl) |
SE (1) | SE8000392L (nl) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4486769A (en) * | 1979-01-24 | 1984-12-04 | Xicor, Inc. | Dense nonvolatile electrically-alterable memory device with substrate coupling electrode |
WO1980001965A1 (en) * | 1979-03-13 | 1980-09-18 | Ncr Co | Static volatile/non-volatile ram system |
JPS57199265A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
JPS57199264A (en) * | 1981-06-03 | 1982-12-07 | Toshiba Corp | Semiconductor memory |
US4388704A (en) * | 1980-09-30 | 1983-06-14 | International Business Machines Corporation | Non-volatile RAM cell with enhanced conduction insulators |
JPS5792490A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Semiconductor storage device |
JPS5792865A (en) * | 1980-11-29 | 1982-06-09 | Toshiba Corp | Manufacture of semiconductor memory device |
GB2094086B (en) * | 1981-03-03 | 1985-08-14 | Tokyo Shibaura Electric Co | Non-volatile semiconductor memory system |
US4630238A (en) * | 1983-10-14 | 1986-12-16 | Fujitsu Limited | Semiconductor memory device |
JPS60185297A (ja) * | 1984-03-02 | 1985-09-20 | Fujitsu Ltd | 不揮発性ランダムアクセスメモリ装置 |
JPH0638502B2 (ja) * | 1984-06-13 | 1994-05-18 | セイコー電子工業株式会社 | 不揮発性ram |
US4616245A (en) * | 1984-10-29 | 1986-10-07 | Ncr Corporation | Direct-write silicon nitride EEPROM cell |
JPH07120716B2 (ja) * | 1985-03-30 | 1995-12-20 | 株式会社東芝 | 半導体記憶装置 |
JPS61225860A (ja) * | 1985-03-30 | 1986-10-07 | Toshiba Corp | 半導体記憶装置 |
JPH01214993A (ja) * | 1988-02-23 | 1989-08-29 | Nissan Motor Co Ltd | データ記憶装置 |
DE10211337B4 (de) * | 2002-03-14 | 2009-12-31 | Infineon Technologies Ag | Schaltkreis-Anordnung und Verfahren zum Betreiben einer Schaltkreis-Anordnung |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4070655A (en) * | 1976-11-05 | 1978-01-24 | The United States Of America As Represented By The Secretary Of The Air Force | Virtually nonvolatile static random access memory device |
US4099196A (en) * | 1977-06-29 | 1978-07-04 | Intel Corporation | Triple layer polysilicon cell |
US4128773A (en) * | 1977-11-07 | 1978-12-05 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
-
1980
- 1980-01-16 GB GB8001429A patent/GB2042296B/en not_active Expired
- 1980-01-17 SE SE8000392A patent/SE8000392L/ not_active Application Discontinuation
- 1980-01-23 FR FR8001399A patent/FR2447587B1/fr not_active Expired
- 1980-01-23 NL NL8000435A patent/NL192015C/nl not_active IP Right Cessation
- 1980-01-24 DE DE19803002492 patent/DE3002492A1/de active Granted
- 1980-01-24 JP JP738980A patent/JPS55101192A/ja active Granted
- 1980-01-24 BE BE0/199093A patent/BE881329A/fr not_active IP Right Cessation
- 1980-01-24 KR KR1019800000256A patent/KR830001767B1/ko active
Also Published As
Publication number | Publication date |
---|---|
DE3002492A1 (de) | 1980-07-31 |
GB2042296B (en) | 1983-05-11 |
BE881329A (fr) | 1980-05-16 |
GB2042296A (en) | 1980-09-17 |
DE3002492C2 (nl) | 1990-12-20 |
FR2447587B1 (fr) | 1986-02-28 |
NL192015B (nl) | 1996-08-01 |
FR2447587A1 (fr) | 1980-08-22 |
JPS55101192A (en) | 1980-08-01 |
SE8000392L (sv) | 1980-07-25 |
NL8000435A (nl) | 1980-07-28 |
NL192015C (nl) | 1996-12-03 |
JPH0115959B2 (nl) | 1989-03-22 |
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