DE202011110832U1 - Lichtemittierende Diodeneinheit auf Waferebene - Google Patents

Lichtemittierende Diodeneinheit auf Waferebene Download PDF

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DE202011110832U1
DE202011110832U1 DE202011110832.9U DE202011110832U DE202011110832U1 DE 202011110832 U1 DE202011110832 U1 DE 202011110832U1 DE 202011110832 U DE202011110832 U DE 202011110832U DE 202011110832 U1 DE202011110832 U1 DE 202011110832U1
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insulating layer
contact
conductivity type
led
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Seoul Semiconductor Co Ltd
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Seoul Semiconductor Co Ltd
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    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
DE202011110832.9U 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene Expired - Lifetime DE202011110832U1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2010-0092807 2010-09-24
KR1020100092807A KR101142965B1 (ko) 2010-09-24 2010-09-24 웨이퍼 레벨 발광 다이오드 패키지 및 그것을 제조하는 방법

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DE202011110832U1 true DE202011110832U1 (de) 2016-09-22

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DE202011110832.9U Expired - Lifetime DE202011110832U1 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene
DE112011106156.0T Active DE112011106156B4 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene
DE112011103186T Pending DE112011103186T5 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung

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DE112011106156.0T Active DE112011106156B4 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene
DE112011103186T Pending DE112011103186T5 (de) 2010-09-24 2011-09-05 Lichtemittierende Diodeneinheit auf Waferebene und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
KR (1) KR101142965B1 (zh)
CN (6) CN103119735B (zh)
DE (3) DE202011110832U1 (zh)
WO (1) WO2012039555A2 (zh)

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EP4163984A1 (en) * 2021-10-05 2023-04-12 Samsung Electronics Co., Ltd. Semiconductor light emitting device, display apparatus including the same, and method of manufacturing the same

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