DE19639026C1 - Selbstjustierte nichtflüchtige Speicherzelle - Google Patents

Selbstjustierte nichtflüchtige Speicherzelle

Info

Publication number
DE19639026C1
DE19639026C1 DE19639026A DE19639026A DE19639026C1 DE 19639026 C1 DE19639026 C1 DE 19639026C1 DE 19639026 A DE19639026 A DE 19639026A DE 19639026 A DE19639026 A DE 19639026A DE 19639026 C1 DE19639026 C1 DE 19639026C1
Authority
DE
Germany
Prior art keywords
trench
floating gate
memory cell
layer
self
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19639026A
Other languages
German (de)
English (en)
Inventor
Georg Tempel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Siemens Corp
Original Assignee
Siemens AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to DE19639026A priority Critical patent/DE19639026C1/de
Application filed by Siemens AG, Siemens Corp filed Critical Siemens AG
Priority to KR1019990702433A priority patent/KR20000048526A/ko
Priority to CNB971999996A priority patent/CN1135628C/zh
Priority to PCT/DE1997/002066 priority patent/WO1998013878A1/de
Priority to JP10515143A priority patent/JP2001501034A/ja
Priority to EP97944710A priority patent/EP0948816B1/de
Priority to RU99108463/28A priority patent/RU2205471C2/ru
Priority to DE59711553T priority patent/DE59711553D1/de
Priority to UA99031564A priority patent/UA57034C2/uk
Priority to BR9712840-6A priority patent/BR9712840A/pt
Priority to AT97944710T priority patent/ATE265091T1/de
Priority to IN1704CA1997 priority patent/IN191647B/en
Application granted granted Critical
Publication of DE19639026C1 publication Critical patent/DE19639026C1/de
Priority to US09/274,500 priority patent/US6025626A/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Micro-Organisms Or Cultivation Processes Thereof (AREA)
DE19639026A 1996-09-23 1996-09-23 Selbstjustierte nichtflüchtige Speicherzelle Expired - Fee Related DE19639026C1 (de)

Priority Applications (13)

Application Number Priority Date Filing Date Title
DE19639026A DE19639026C1 (de) 1996-09-23 1996-09-23 Selbstjustierte nichtflüchtige Speicherzelle
UA99031564A UA57034C2 (uk) 1996-09-23 1997-09-15 Самосуміщувана енергонезалежна запам'ятовуюча комірка і спосіб її виготовлення
PCT/DE1997/002066 WO1998013878A1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle
JP10515143A JP2001501034A (ja) 1996-09-23 1997-09-15 不揮発性メモリセル
EP97944710A EP0948816B1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle
RU99108463/28A RU2205471C2 (ru) 1996-09-23 1997-09-15 Энергонезависимая ячейка памяти
KR1019990702433A KR20000048526A (ko) 1996-09-23 1997-09-15 자기 정렬 비휘발성 메모리 셀
CNB971999996A CN1135628C (zh) 1996-09-23 1997-09-15 非易失性存储单元
BR9712840-6A BR9712840A (pt) 1996-09-23 1997-09-15 Célula de memória não volátil
AT97944710T ATE265091T1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle
DE59711553T DE59711553D1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle
IN1704CA1997 IN191647B (enExample) 1996-09-23 1997-09-16
US09/274,500 US6025626A (en) 1996-09-23 1999-03-23 Nonvolatile memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19639026A DE19639026C1 (de) 1996-09-23 1996-09-23 Selbstjustierte nichtflüchtige Speicherzelle

Publications (1)

Publication Number Publication Date
DE19639026C1 true DE19639026C1 (de) 1998-04-09

Family

ID=7806628

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19639026A Expired - Fee Related DE19639026C1 (de) 1996-09-23 1996-09-23 Selbstjustierte nichtflüchtige Speicherzelle
DE59711553T Expired - Lifetime DE59711553D1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE59711553T Expired - Lifetime DE59711553D1 (de) 1996-09-23 1997-09-15 Selbstjustierte nichtflüchtige speicherzelle

Country Status (11)

Country Link
EP (1) EP0948816B1 (enExample)
JP (1) JP2001501034A (enExample)
KR (1) KR20000048526A (enExample)
CN (1) CN1135628C (enExample)
AT (1) ATE265091T1 (enExample)
BR (1) BR9712840A (enExample)
DE (2) DE19639026C1 (enExample)
IN (1) IN191647B (enExample)
RU (1) RU2205471C2 (enExample)
UA (1) UA57034C2 (enExample)
WO (1) WO1998013878A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001095392A1 (fr) * 2000-06-09 2001-12-13 Commissariat A L'energie Atomique Memoire electronique a architecture damascene et procede de realisation d'une telle memoire
DE10162261A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Speicherzelle mit Grabentransistor

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6661053B2 (en) 2001-12-18 2003-12-09 Infineon Technologies Ag Memory cell with trench transistor
TW575960B (en) * 2001-12-18 2004-02-11 Infineon Technologies Ag Memory cell with trench transistor
DE10204873C1 (de) 2002-02-06 2003-10-09 Infineon Technologies Ag Herstellungsverfahren für Speicherzelle
DE10226964A1 (de) * 2002-06-17 2004-01-08 Infineon Technologies Ag Verfahren zur Herstellung einer NROM-Speicherzellenanordnung
DE10229065A1 (de) * 2002-06-28 2004-01-29 Infineon Technologies Ag Verfahren zur Herstellung eines NROM-Speicherzellenfeldes
DE10306318B4 (de) * 2003-02-14 2010-07-22 Infineon Technologies Ag Halbleiter-Schaltungsanordnung mit Grabenisolation und Herstellungsverfahren
KR100674952B1 (ko) * 2005-02-05 2007-01-26 삼성전자주식회사 3차원 플래쉬 메모리 소자 및 그 제조방법
US7365382B2 (en) * 2005-02-28 2008-04-29 Infineon Technologies Ag Semiconductor memory having charge trapping memory cells and fabrication method thereof
US7312490B2 (en) * 2005-03-31 2007-12-25 Intel Corporation Vertical memory device and method
KR100707217B1 (ko) * 2006-05-26 2007-04-13 삼성전자주식회사 리세스-타입 제어 게이트 전극을 구비하는 반도체 메모리소자 및 그 제조 방법
KR101131136B1 (ko) * 2006-10-19 2012-04-03 삼성전자주식회사 리세스-타입 제어 게이트 전극을 구비하는 반도체 메모리소자의 동작 방법
CN101221810B (zh) * 2006-11-20 2010-06-09 旺宏电子股份有限公司 栅极二极管非易失性存储器的操作
JP5301123B2 (ja) 2007-07-25 2013-09-25 スパンション エルエルシー 半導体装置及びその製造方法
JP5546740B2 (ja) 2008-05-23 2014-07-09 ローム株式会社 半導体装置
WO2010114406A1 (ru) * 2009-03-30 2010-10-07 Murashev Viktor Nikolaevich Ячейка памяти для быстродействующего эсппзу и способ ее программирования
RU2436190C1 (ru) * 2010-04-13 2011-12-10 Учреждение Российской академии наук Физико-технологический институт РАН (ФТИАН) Ячейка энергонезависимой электрически перепрограммируемой памяти
RU2465659C1 (ru) * 2011-08-09 2012-10-27 Федеральное государственное автономное образовательное учреждение высшего профессионального образования "Национальный исследовательский технологический университет "МИСиС" Ячейка памяти для быстродействующего эсппзу с управляемым потенциалом подзатворной области
JP5815786B2 (ja) * 2014-04-09 2015-11-17 ローム株式会社 半導体装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814840A (en) * 1985-08-09 1989-03-21 Masahiro Kameda High-density reprogrammable semiconductor memory device
US5045490A (en) * 1990-01-23 1991-09-03 Texas Instruments Incorporated Method of making a pleated floating gate trench EPROM

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6285468A (ja) * 1985-10-09 1987-04-18 Nippon Denso Co Ltd 不揮発性半導体記憶装置
JP2925312B2 (ja) * 1990-11-30 1999-07-28 株式会社東芝 半導体基板の製造方法
RU2018994C1 (ru) * 1992-03-31 1994-08-30 Константин Иванович Баринов Элемент памяти
JP2889061B2 (ja) * 1992-09-25 1999-05-10 ローム株式会社 半導体記憶装置およびその製法
KR0125113B1 (ko) * 1993-02-02 1997-12-11 모리시타 요이찌 불휘발성 반도체 메모리 집적장치 및 그 제조방법
JPH0738002A (ja) * 1993-07-22 1995-02-07 Toshiba Corp 半導体装置及びその半導体装置を用いた不揮発性半導体メモリとそのメモリの駆動回路

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4814840A (en) * 1985-08-09 1989-03-21 Masahiro Kameda High-density reprogrammable semiconductor memory device
US5045490A (en) * 1990-01-23 1991-09-03 Texas Instruments Incorporated Method of making a pleated floating gate trench EPROM

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
ARITOME, S., et al.: A 0.64 mum·2· Self-Aligned Shallow Trench Isolation Cell (SA-STI CELL) for 3V-only 256 Mbit Nand EEPROMS in: IEDM 1994, p. 61-64 *
ARITOME, S., et al.: A Novel Side-Wall Transfer- Transistor Cell (SWATT CELL) for Multi-Level Nand EEPROMS in: IEDM 1995, p. 275-278 *
HISAMUNE, Y.S., et al.: A High Capacitive- Coupling Ratio (HiCR) Cell for 3V-Only 64 Mbit and Future Flash Memories in: IEDM-1993, p. 19-22 *
PEIN, H.B., et al.: Performance of the 3-D Side- wall Flash EPROM Cell in: IEDM 1993, p. 11-14 *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001095392A1 (fr) * 2000-06-09 2001-12-13 Commissariat A L'energie Atomique Memoire electronique a architecture damascene et procede de realisation d'une telle memoire
FR2810161A1 (fr) * 2000-06-09 2001-12-14 Commissariat Energie Atomique Memoire electronique a architecture damascene et procede de realisation d'une telle memoire
DE10162261A1 (de) * 2001-12-18 2003-07-10 Infineon Technologies Ag Speicherzelle mit Grabentransistor
DE10162261B4 (de) * 2001-12-18 2005-09-15 Infineon Technologies Ag Speicherzelle mit Grabentransistor

Also Published As

Publication number Publication date
DE59711553D1 (de) 2004-05-27
ATE265091T1 (de) 2004-05-15
EP0948816B1 (de) 2004-04-21
WO1998013878A1 (de) 1998-04-02
EP0948816A1 (de) 1999-10-13
RU2205471C2 (ru) 2003-05-27
BR9712840A (pt) 2000-12-05
IN191647B (enExample) 2003-12-13
UA57034C2 (uk) 2003-06-16
JP2001501034A (ja) 2001-01-23
CN1238857A (zh) 1999-12-15
CN1135628C (zh) 2004-01-21
KR20000048526A (ko) 2000-07-25

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Legal Events

Date Code Title Description
8100 Publication of patent without earlier publication of application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee