DE112004002638B4 - Verfahren zur Herstellung einer integrierten Schaltung mit Seitenwandabstandshaltern mit geringer Verspannung - Google Patents
Verfahren zur Herstellung einer integrierten Schaltung mit Seitenwandabstandshaltern mit geringer Verspannung Download PDFInfo
- Publication number
- DE112004002638B4 DE112004002638B4 DE112004002638T DE112004002638T DE112004002638B4 DE 112004002638 B4 DE112004002638 B4 DE 112004002638B4 DE 112004002638 T DE112004002638 T DE 112004002638T DE 112004002638 T DE112004002638 T DE 112004002638T DE 112004002638 B4 DE112004002638 B4 DE 112004002638B4
- Authority
- DE
- Germany
- Prior art keywords
- silicide
- forming
- gate
- semiconductor substrate
- procedure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 125000006850 spacer group Chemical group 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title description 15
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 46
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000000034 method Methods 0.000 claims abstract description 36
- 238000000151 deposition Methods 0.000 claims abstract description 10
- 239000011229 interlayer Substances 0.000 claims abstract description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 10
- 238000001465 metallisation Methods 0.000 claims abstract description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 239000010941 cobalt Substances 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910021334 nickel silicide Inorganic materials 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 39
- 229910052710 silicon Inorganic materials 0.000 description 34
- 239000010703 silicon Substances 0.000 description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 33
- 229910052751 metal Inorganic materials 0.000 description 25
- 239000002184 metal Substances 0.000 description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 238000005468 ion implantation Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- 239000012535 impurity Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 8
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 230000007704 transition Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- 239000007943 implant Substances 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000004965 Silica aerogel Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000001010 compromised effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 2
- 229910021341 titanium silicide Inorganic materials 0.000 description 2
- 229910019001 CoSi Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910008484 TiSi Inorganic materials 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000016507 interphase Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000004530 micro-emulsion Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000008208 nanofoam Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- -1 tantalum (Ta) Chemical class 0.000 description 1
- FVCJARXRCUNQQS-UHFFFAOYSA-N trimethylsilyl dihydrogen phosphate Chemical compound C[Si](C)(C)OP(O)(O)=O FVCJARXRCUNQQS-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/756,023 | 2004-01-12 | ||
| US10/756,023 US7005357B2 (en) | 2004-01-12 | 2004-01-12 | Low stress sidewall spacer in integrated circuit technology |
| PCT/US2004/043109 WO2005071729A1 (en) | 2004-01-12 | 2004-12-21 | Low stress sidewall spacer in integrated circuit technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE112004002638T5 DE112004002638T5 (de) | 2007-02-01 |
| DE112004002638B4 true DE112004002638B4 (de) | 2009-11-26 |
Family
ID=34739734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112004002638T Expired - Fee Related DE112004002638B4 (de) | 2004-01-12 | 2004-12-21 | Verfahren zur Herstellung einer integrierten Schaltung mit Seitenwandabstandshaltern mit geringer Verspannung |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7005357B2 (enExample) |
| JP (1) | JP5265872B2 (enExample) |
| KR (1) | KR20060123481A (enExample) |
| CN (1) | CN1902743A (enExample) |
| DE (1) | DE112004002638B4 (enExample) |
| GB (1) | GB2425405B (enExample) |
| TW (1) | TWI355733B (enExample) |
| WO (1) | WO2005071729A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132352B1 (en) * | 2004-08-06 | 2006-11-07 | Advanced Micro Devices, Inc. | Method of eliminating source/drain junction spiking, and device produced thereby |
| KR20080047482A (ko) * | 2005-09-23 | 2008-05-28 | 엔엑스피 비 브이 | 반도체 디바이스용 구조체 제조 방법 |
| US7465635B2 (en) * | 2006-09-21 | 2008-12-16 | Texas Instruments Incorporated | Method for manufacturing a gate sidewall spacer using an energy beam treatment |
| US7741181B2 (en) * | 2007-11-06 | 2010-06-22 | International Business Machines Corporation | Methods of forming mixed gate CMOS with single poly deposition |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814545A (en) * | 1995-10-02 | 1998-09-29 | Motorola, Inc. | Semiconductor device having a phosphorus doped PECVD film and a method of manufacture |
| US20020022367A1 (en) * | 1999-04-02 | 2002-02-21 | Ji Soo Park | Method for fabricating semiconductor device |
| DE112004001251T5 (de) * | 2003-07-07 | 2006-06-22 | Advanced Micro Devices, Inc., Sunnyvale | Äusserst gleichförmige Silizide in der Technologie integrierte Schaltungen |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766406A (ja) * | 1993-08-25 | 1995-03-10 | Oki Electric Ind Co Ltd | サリサイド型mosfet及びその製造方法 |
| JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
| JP2809113B2 (ja) * | 1994-09-29 | 1998-10-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH08186085A (ja) * | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
| JP3572561B2 (ja) * | 1996-10-11 | 2004-10-06 | 富士通株式会社 | 半導体装置の製造方法 |
| US5858846A (en) * | 1997-08-04 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Salicide integration method |
| JP2000133802A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | 半導体装置とその製造方法 |
| US6368988B1 (en) * | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
| US6040223A (en) * | 1999-08-13 | 2000-03-21 | Taiwan Semiconductor Manufacturing Company | Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits |
| KR100407684B1 (ko) * | 2000-06-28 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
| US6495460B1 (en) * | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
| US6664172B2 (en) * | 2002-01-22 | 2003-12-16 | United Microelectronics Corp. | Method of forming a MOS transistor with improved threshold voltage stability |
-
2004
- 2004-01-12 US US10/756,023 patent/US7005357B2/en not_active Expired - Lifetime
- 2004-12-21 GB GB0615073A patent/GB2425405B/en not_active Expired - Fee Related
- 2004-12-21 KR KR1020067013975A patent/KR20060123481A/ko not_active Ceased
- 2004-12-21 JP JP2006549314A patent/JP5265872B2/ja not_active Expired - Fee Related
- 2004-12-21 CN CNA200480040305XA patent/CN1902743A/zh active Pending
- 2004-12-21 WO PCT/US2004/043109 patent/WO2005071729A1/en not_active Ceased
- 2004-12-21 DE DE112004002638T patent/DE112004002638B4/de not_active Expired - Fee Related
-
2005
- 2005-01-07 TW TW094100442A patent/TWI355733B/zh not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5814545A (en) * | 1995-10-02 | 1998-09-29 | Motorola, Inc. | Semiconductor device having a phosphorus doped PECVD film and a method of manufacture |
| US20020022367A1 (en) * | 1999-04-02 | 2002-02-21 | Ji Soo Park | Method for fabricating semiconductor device |
| DE112004001251T5 (de) * | 2003-07-07 | 2006-06-22 | Advanced Micro Devices, Inc., Sunnyvale | Äusserst gleichförmige Silizide in der Technologie integrierte Schaltungen |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007518274A (ja) | 2007-07-05 |
| CN1902743A (zh) | 2007-01-24 |
| US7005357B2 (en) | 2006-02-28 |
| GB2425405B (en) | 2008-08-20 |
| JP5265872B2 (ja) | 2013-08-14 |
| WO2005071729A1 (en) | 2005-08-04 |
| US20050153496A1 (en) | 2005-07-14 |
| TW200527649A (en) | 2005-08-16 |
| TWI355733B (en) | 2012-01-01 |
| KR20060123481A (ko) | 2006-12-01 |
| DE112004002638T5 (de) | 2007-02-01 |
| GB2425405A (en) | 2006-10-25 |
| GB0615073D0 (en) | 2006-09-06 |
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| R119 | Application deemed withdrawn, or ip right lapsed, due to non-payment of renewal fee |