TWI355733B - Low stress sidewall spacer in integrated circuit t - Google Patents
Low stress sidewall spacer in integrated circuit t Download PDFInfo
- Publication number
- TWI355733B TWI355733B TW094100442A TW94100442A TWI355733B TW I355733 B TWI355733 B TW I355733B TW 094100442 A TW094100442 A TW 094100442A TW 94100442 A TW94100442 A TW 94100442A TW I355733 B TWI355733 B TW I355733B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- gate
- dielectric
- source
- layer
- Prior art date
Links
- 125000006850 spacer group Chemical group 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 28
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 239000004065 semiconductor Substances 0.000 claims description 25
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 13
- SCCCLDWUZODEKG-UHFFFAOYSA-N germanide Chemical compound [GeH3-] SCCCLDWUZODEKG-UHFFFAOYSA-N 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 8
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000003989 dielectric material Substances 0.000 claims description 6
- 239000011229 interlayer Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 61
- 229910052732 germanium Inorganic materials 0.000 description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 11
- 229920005591 polysilicon Polymers 0.000 description 10
- 238000005468 ion implantation Methods 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 6
- 238000000137 annealing Methods 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 239000010936 titanium Substances 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 150000002500 ions Chemical group 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229920003209 poly(hydridosilsesquioxane) Polymers 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 description 1
- 241000283070 Equus zebra Species 0.000 description 1
- 206010036790 Productive cough Diseases 0.000 description 1
- 241000239226 Scorpiones Species 0.000 description 1
- 239000004965 Silica aerogel Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- OPARTXXEFXPWJL-UHFFFAOYSA-N [acetyloxy-bis[(2-methylpropan-2-yl)oxy]silyl] acetate Chemical compound CC(=O)O[Si](OC(C)=O)(OC(C)(C)C)OC(C)(C)C OPARTXXEFXPWJL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 150000001622 bismuth compounds Chemical class 0.000 description 1
- 239000005380 borophosphosilicate glass Substances 0.000 description 1
- 150000001785 cerium compounds Chemical class 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 229910052805 deuterium Inorganic materials 0.000 description 1
- -1 diethyl ethoxy-di-tertiary-butoxy decane Chemical compound 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- IAOQICOCWPKKMH-UHFFFAOYSA-N dithieno[3,2-a:3',2'-d]thiophene Chemical compound C1=CSC2=C1C(C=CS1)=C1S2 IAOQICOCWPKKMH-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- RGXWDWUGBIJHDO-UHFFFAOYSA-N ethyl decanoate Chemical compound CCCCCCCCCC(=O)OCC RGXWDWUGBIJHDO-UHFFFAOYSA-N 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000004530 micro-emulsion Substances 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 239000008208 nanofoam Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 1
- 239000010450 olivine Substances 0.000 description 1
- 229910052609 olivine Inorganic materials 0.000 description 1
- GKEBANQXMVUDHF-UHFFFAOYSA-H oxalate;ruthenium(3+) Chemical compound [Ru+3].[Ru+3].[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O.[O-]C(=O)C([O-])=O GKEBANQXMVUDHF-UHFFFAOYSA-H 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- UZLYXNNZYFBAQO-UHFFFAOYSA-N oxygen(2-);ytterbium(3+) Chemical compound [O-2].[O-2].[O-2].[Yb+3].[Yb+3] UZLYXNNZYFBAQO-UHFFFAOYSA-N 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910002028 silica xerogel Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 210000003802 sputum Anatomy 0.000 description 1
- 208000024794 sputum Diseases 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 1
- FVCJARXRCUNQQS-UHFFFAOYSA-N trimethylsilyl dihydrogen phosphate Chemical compound C[Si](C)(C)OP(O)(O)=O FVCJARXRCUNQQS-UHFFFAOYSA-N 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
- 229910003454 ytterbium oxide Inorganic materials 0.000 description 1
- 229940075624 ytterbium oxide Drugs 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0223—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate
- H10D30/0227—Manufacture or treatment of FETs having insulated gates [IGFET] having source and drain regions or source and drain extensions self-aligned to sides of the gate having both lightly-doped source and drain extensions and source and drain regions self-aligned to the sides of the gate, e.g. lightly-doped drain [LDD] MOSFET or double-diffused drain [DDD] MOSFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/756,023 US7005357B2 (en) | 2004-01-12 | 2004-01-12 | Low stress sidewall spacer in integrated circuit technology |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200527649A TW200527649A (en) | 2005-08-16 |
| TWI355733B true TWI355733B (en) | 2012-01-01 |
Family
ID=34739734
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW094100442A TWI355733B (en) | 2004-01-12 | 2005-01-07 | Low stress sidewall spacer in integrated circuit t |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US7005357B2 (enExample) |
| JP (1) | JP5265872B2 (enExample) |
| KR (1) | KR20060123481A (enExample) |
| CN (1) | CN1902743A (enExample) |
| DE (1) | DE112004002638B4 (enExample) |
| GB (1) | GB2425405B (enExample) |
| TW (1) | TWI355733B (enExample) |
| WO (1) | WO2005071729A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7132352B1 (en) * | 2004-08-06 | 2006-11-07 | Advanced Micro Devices, Inc. | Method of eliminating source/drain junction spiking, and device produced thereby |
| KR20080047482A (ko) * | 2005-09-23 | 2008-05-28 | 엔엑스피 비 브이 | 반도체 디바이스용 구조체 제조 방법 |
| US7465635B2 (en) * | 2006-09-21 | 2008-12-16 | Texas Instruments Incorporated | Method for manufacturing a gate sidewall spacer using an energy beam treatment |
| US7741181B2 (en) * | 2007-11-06 | 2010-06-22 | International Business Machines Corporation | Methods of forming mixed gate CMOS with single poly deposition |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0766406A (ja) * | 1993-08-25 | 1995-03-10 | Oki Electric Ind Co Ltd | サリサイド型ｍｏｓｆｅｔ及びその製造方法 |
| JPH07254574A (ja) * | 1994-03-16 | 1995-10-03 | Sony Corp | 電極形成方法 |
| JP2809113B2 (ja) * | 1994-09-29 | 1998-10-08 | 日本電気株式会社 | 半導体装置の製造方法 |
| JPH08186085A (ja) * | 1994-12-28 | 1996-07-16 | Nec Corp | 半導体装置の製造方法 |
| US5814545A (en) * | 1995-10-02 | 1998-09-29 | Motorola, Inc. | Semiconductor device having a phosphorus doped PECVD film and a method of manufacture |
| JP3572561B2 (ja) * | 1996-10-11 | 2004-10-06 | 富士通株式会社 | 半導体装置の製造方法 |
| US5858846A (en) * | 1997-08-04 | 1999-01-12 | Taiwan Semiconductor Manufacturing Company, Ltd. | Salicide integration method |
| JP2000133802A (ja) * | 1998-10-28 | 2000-05-12 | Nec Corp | 半導体装置とその製造方法 |
| KR100313510B1 (ko) * | 1999-04-02 | 2001-11-07 | 김영환 | 반도체 소자의 제조방법 |
| US6368988B1 (en) * | 1999-07-16 | 2002-04-09 | Micron Technology, Inc. | Combined gate cap or digit line and spacer deposition using HDP |
| US6040223A (en) * | 1999-08-13 | 2000-03-21 | Taiwan Semiconductor Manufacturing Company | Method for making improved polysilicon FET gate electrodes having composite sidewall spacers using a trapezoidal-shaped insulating layer for more reliable integrated circuits |
| KR100407684B1 (ko) * | 2000-06-28 | 2003-12-01 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
| US6483154B1 (en) * | 2000-10-05 | 2002-11-19 | Advanced Micro Devices, Inc. | Nitrogen oxide plasma treatment for reduced nickel silicide bridging |
| US6495460B1 (en) * | 2001-07-11 | 2002-12-17 | Advanced Micro Devices, Inc. | Dual layer silicide formation using a titanium barrier to reduce surface roughness at silicide/junction interface |
| US6664172B2 (en) * | 2002-01-22 | 2003-12-16 | United Microelectronics Corp. | Method of forming a MOS transistor with improved threshold voltage stability |
| US7005376B2 (en) * | 2003-07-07 | 2006-02-28 | Advanced Micro Devices, Inc. | Ultra-uniform silicides in integrated circuit technology |
-
2004
- 2004-01-12 US US10/756,023 patent/US7005357B2/en not_active Expired - Lifetime
- 2004-12-21 GB GB0615073A patent/GB2425405B/en not_active Expired - Fee Related
- 2004-12-21 KR KR1020067013975A patent/KR20060123481A/ko not_active Ceased
- 2004-12-21 JP JP2006549314A patent/JP5265872B2/ja not_active Expired - Fee Related
- 2004-12-21 CN CNA200480040305XA patent/CN1902743A/zh active Pending
- 2004-12-21 WO PCT/US2004/043109 patent/WO2005071729A1/en not_active Ceased
- 2004-12-21 DE DE112004002638T patent/DE112004002638B4/de not_active Expired - Fee Related
-
2005
- 2005-01-07 TW TW094100442A patent/TWI355733B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007518274A (ja) | 2007-07-05 |
| DE112004002638B4 (de) | 2009-11-26 |
| CN1902743A (zh) | 2007-01-24 |
| US7005357B2 (en) | 2006-02-28 |
| GB2425405B (en) | 2008-08-20 |
| JP5265872B2 (ja) | 2013-08-14 |
| WO2005071729A1 (en) | 2005-08-04 |
| US20050153496A1 (en) | 2005-07-14 |
| TW200527649A (en) | 2005-08-16 |
| KR20060123481A (ko) | 2006-12-01 |
| DE112004002638T5 (de) | 2007-02-01 |
| GB2425405A (en) | 2006-10-25 |
| GB0615073D0 (en) | 2006-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US12159869B2 (en) | Backside interconnect structures for semiconductor devices and methods of forming the same | |
| US11664374B2 (en) | Backside interconnect structures for semiconductor devices and methods of forming the same | |
| US10312434B2 (en) | Selective deposition and nitridization of bottom electrode metal for MRAM applications | |
| US20170330834A1 (en) | Contact line having insulating spacer therein and method of forming same | |
| US10128187B2 (en) | Integrated circuit structure having gate contact and method of forming same | |
| US20250254939A1 (en) | Semiconductor devices including backside power rails and methods of manufacture | |
| US20080150024A1 (en) | Semiconductor Device and Method of Manufacturing a Semiconductor Device | |
| US9853025B1 (en) | Thin film metallic resistors formed by surface treatment of insulating layer | |
| US7843015B2 (en) | Multi-silicide system in integrated circuit technology | |
| TWI355733B (en) | Low stress sidewall spacer in integrated circuit t | |
| US9583397B1 (en) | Source/drain terminal contact and method of forming same | |
| US8603915B2 (en) | Multi-stage silicidation process | |
| US10121893B2 (en) | Integrated circuit structure without gate contact and method of forming same | |
| US20050048731A1 (en) | Siliciding spacer in integrated circuit technology | |
| KR101093123B1 (ko) | 집접 회로 기술에 있어서의 극도로 균일한 실리사이드 | |
| US7064067B1 (en) | Reduction of lateral silicide growth in integrated circuit technology | |
| US7023059B1 (en) | Trenches to reduce lateral silicide growth in integrated circuit technology | |
| US7049666B1 (en) | Low power pre-silicide process in integrated circuit technology | |
| US8168536B2 (en) | Realization of self-positioned contacts by epitaxy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |