DE102017208405B4 - Verfahren zum Bearbeiten eines Wafers und Schutzfolie - Google Patents

Verfahren zum Bearbeiten eines Wafers und Schutzfolie Download PDF

Info

Publication number
DE102017208405B4
DE102017208405B4 DE102017208405.7A DE102017208405A DE102017208405B4 DE 102017208405 B4 DE102017208405 B4 DE 102017208405B4 DE 102017208405 A DE102017208405 A DE 102017208405A DE 102017208405 B4 DE102017208405 B4 DE 102017208405B4
Authority
DE
Germany
Prior art keywords
wafer
protective film
layer
protective
adhesive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE102017208405.7A
Other languages
German (de)
English (en)
Other versions
DE102017208405A1 (de
Inventor
Karl Heinz Priewasser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Priority to DE102017208405.7A priority Critical patent/DE102017208405B4/de
Priority to JP2018081510A priority patent/JP6888218B2/ja
Priority to SG10201803494SA priority patent/SG10201803494SA/en
Priority to US15/978,869 priority patent/US11637074B2/en
Priority to TW107116827A priority patent/TWI683392B/zh
Priority to KR1020180056642A priority patent/KR102105114B1/ko
Priority to CN201810477901.8A priority patent/CN108933098B/zh
Publication of DE102017208405A1 publication Critical patent/DE102017208405A1/de
Priority to JP2019098689A priority patent/JP6740542B2/ja
Priority to JP2020042019A priority patent/JP2020113778A/ja
Priority to US17/158,604 priority patent/US11784138B2/en
Application granted granted Critical
Publication of DE102017208405B4 publication Critical patent/DE102017208405B4/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P54/00—Cutting or separating of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Dicing (AREA)
  • Grinding Of Cylindrical And Plane Surfaces (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
DE102017208405.7A 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie Active DE102017208405B4 (de)

Priority Applications (10)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie
JP2018081510A JP6888218B2 (ja) 2017-05-18 2018-04-20 ウェハ処理方法
SG10201803494SA SG10201803494SA (en) 2017-05-18 2018-04-26 Method of Processing Wafer
US15/978,869 US11637074B2 (en) 2017-05-18 2018-05-14 Method of processing wafer
KR1020180056642A KR102105114B1 (ko) 2017-05-18 2018-05-17 웨이퍼를 처리하는 방법
TW107116827A TWI683392B (zh) 2017-05-18 2018-05-17 處理晶圓的方法
CN201810477901.8A CN108933098B (zh) 2017-05-18 2018-05-18 处理晶圆的方法和保护膜
JP2019098689A JP6740542B2 (ja) 2017-05-18 2019-05-27 ウェハ処理方法
JP2020042019A JP2020113778A (ja) 2017-05-18 2020-03-11 ウェハ処理方法
US17/158,604 US11784138B2 (en) 2017-05-18 2021-01-26 Wafer processing with a protective film and peripheral adhesive

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102017208405.7A DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie

Publications (2)

Publication Number Publication Date
DE102017208405A1 DE102017208405A1 (de) 2018-11-22
DE102017208405B4 true DE102017208405B4 (de) 2024-05-02

Family

ID=64272078

Family Applications (1)

Application Number Title Priority Date Filing Date
DE102017208405.7A Active DE102017208405B4 (de) 2017-05-18 2017-05-18 Verfahren zum Bearbeiten eines Wafers und Schutzfolie

Country Status (7)

Country Link
US (2) US11637074B2 (https=)
JP (3) JP6888218B2 (https=)
KR (1) KR102105114B1 (https=)
CN (1) CN108933098B (https=)
DE (1) DE102017208405B4 (https=)
SG (1) SG10201803494SA (https=)
TW (1) TWI683392B (https=)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110663106B (zh) * 2017-05-18 2023-09-22 株式会社迪思科 在加工晶圆中使用的保护片、用于晶圆的处理系统以及晶圆与保护片的组合体
US12312512B2 (en) 2019-02-26 2025-05-27 Disco Corporation Adhesive sheet for backgrinding and production method for semiconductor wafer
US12243766B2 (en) 2019-02-26 2025-03-04 Disco Corporation Back grinding adhesive sheet, and method for manufacturing semiconductor wafer
JP7277019B2 (ja) * 2019-03-05 2023-05-18 株式会社ディスコ ウェーハの加工方法
JP7333192B2 (ja) * 2019-04-23 2023-08-24 株式会社ディスコ 移設方法
JP7229844B2 (ja) 2019-04-25 2023-02-28 株式会社ディスコ ウエーハの加工方法
JP7330616B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7330615B2 (ja) * 2019-05-10 2023-08-22 株式会社ディスコ ウェーハの加工方法
JP7286245B2 (ja) * 2019-06-07 2023-06-05 株式会社ディスコ ウェーハの加工方法
DE102019211540A1 (de) * 2019-08-01 2021-02-04 Disco Corporation Verfahren zum bearbeiten eines substrats
JP7345973B2 (ja) * 2019-08-07 2023-09-19 株式会社ディスコ ウェーハの加工方法
JP7341606B2 (ja) * 2019-09-11 2023-09-11 株式会社ディスコ ウェーハの加工方法
JP2021064627A (ja) * 2019-10-10 2021-04-22 株式会社ディスコ ウェーハの加工方法
US11508606B2 (en) * 2019-11-05 2022-11-22 Nxp B.V. Technique for handling diced wafers of integrated circuits
JP7430515B2 (ja) * 2019-11-06 2024-02-13 株式会社ディスコ ウエーハの処理方法
JP2021077720A (ja) * 2019-11-07 2021-05-20 株式会社ディスコ ウェーハの加工方法
JP7455470B2 (ja) * 2020-03-13 2024-03-26 株式会社ディスコ ウェーハの加工方法
JP7536393B2 (ja) * 2020-06-02 2024-08-20 株式会社ディスコ ウェーハの加工方法、保護部材貼着装置、及び、加工装置
JP2022041447A (ja) 2020-09-01 2022-03-11 株式会社ディスコ ウェーハの加工方法
CN112157580A (zh) * 2020-09-26 2021-01-01 绍兴自远磨具有限公司 一种硅片研磨盘及其制备方法和用途
US11587809B2 (en) * 2020-09-30 2023-02-21 Advanced Semiconductor Engineering, Inc. Wafer supporting mechanism and method for wafer dicing
JP7709877B2 (ja) * 2021-09-15 2025-07-17 株式会社Ｓｃｒｅｅｎホールディングス 端部状態確認装置
JP7845959B2 (ja) * 2022-08-22 2026-04-14 株式会社ディスコ 被加工物の加工方法
JP2024079914A (ja) 2022-12-01 2024-06-13 株式会社ディスコ 樹脂シート
DE102023203941A1 (de) * 2023-04-27 2024-10-31 Carl Zeiss Smt Gmbh Verfahren zur Nachbearbeitung und zur Handhabung von MEMS-Chips

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191296A (ja) 2003-12-25 2005-07-14 Jsr Corp バックグラインドテープ及び半導体ウェハの研磨方法
JP2010027685A (ja) 2008-07-15 2010-02-04 Lintec Corp 半導体ウエハの研削方法
JP2013243224A (ja) 2012-05-18 2013-12-05 Disco Abrasive Syst Ltd 保護部材の貼着方法
DE102015216619A1 (de) 2015-08-31 2017-03-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers
WO2017036512A1 (en) 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57173135A (en) * 1981-04-17 1982-10-25 Toshio Kunugi Manufacture of super-strong film
JPS58153352A (ja) 1982-03-09 1983-09-12 Toshiba Corp 半導体素子の製造方法
JP2000100558A (ja) * 1998-09-18 2000-04-07 Matsushita Electric Ind Co Ltd 発光装置
JP4780828B2 (ja) * 2000-11-22 2011-09-28 三井化学株式会社 ウエハ加工用粘着テープ及びその製造方法並びに使用方法
JP2003037155A (ja) * 2001-07-25 2003-02-07 Mitsubishi Gas Chem Co Inc 薄葉化ウェハーの製造法
JP2002203821A (ja) 2000-12-28 2002-07-19 Mitsubishi Gas Chem Co Inc 接着および剥離法
DE10121556A1 (de) * 2001-05-03 2002-11-14 Infineon Technologies Ag Verfahren zum Rückseitenschleifen von Wafern
US6777267B2 (en) * 2002-11-01 2004-08-17 Agilent Technologies, Inc. Die singulation using deep silicon etching
JP2005191297A (ja) 2003-12-25 2005-07-14 Jsr Corp ダイシングフィルム及び半導体ウェハの切断方法
US20050244631A1 (en) * 2004-04-28 2005-11-03 Mitsui Chemicals, Inc. Surface protecting film for semiconductor wafer and method of protecting semiconductor wafer using the same
JP2006210401A (ja) * 2005-01-25 2006-08-10 Disco Abrasive Syst Ltd ウェーハの分割方法
JP4930679B2 (ja) 2005-12-14 2012-05-16 日本ゼオン株式会社 半導体素子の製造方法
JP5151104B2 (ja) 2006-09-22 2013-02-27 パナソニック株式会社 電子部品の製造方法
JP5064985B2 (ja) * 2006-12-05 2012-10-31 古河電気工業株式会社 半導体ウェハの処理方法
TWI324802B (en) * 2007-02-16 2010-05-11 Advanced Semiconductor Eng Method of thinning wafer
JP4934620B2 (ja) 2008-03-25 2012-05-16 古河電気工業株式会社 ウエハ加工用テープ
JP2011054827A (ja) 2009-09-03 2011-03-17 Fujitsu Semiconductor Ltd 半導体装置の製造方法及び表面保護テープ
US8252665B2 (en) * 2009-09-14 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Protection layer for adhesive material at wafer edge
JP5545640B2 (ja) * 2010-05-11 2014-07-09 株式会社ディスコ 研削方法
KR20120023258A (ko) 2010-09-01 2012-03-13 주식회사 이오테크닉스 웨이퍼 가공방법 및 웨이퍼 가공장치
WO2013095344A1 (en) * 2011-12-19 2013-06-27 Intel Corporation Using an optically transparent solid material as a support structure for attachment of a semiconductor material to a substrate
JP6061590B2 (ja) * 2012-09-27 2017-01-18 株式会社ディスコ 表面保護部材および加工方法
KR102061695B1 (ko) * 2012-10-17 2020-01-02 삼성전자주식회사 웨이퍼 가공 방법
JP6004100B2 (ja) * 2013-05-24 2016-10-05 富士電機株式会社 半導体装置の製造方法
JP5666659B2 (ja) * 2013-07-17 2015-02-12 リンテック株式会社 ウェハ加工用シート
US9184083B2 (en) * 2013-07-29 2015-11-10 3M Innovative Properties Company Apparatus, hybrid laminated body, method and materials for temporary substrate support
US20160176169A1 (en) * 2013-08-01 2016-06-23 Lintec Corporation Protective Film Formation-Use Composite Sheet
JP2016001677A (ja) * 2014-06-12 2016-01-07 株式会社ディスコ ウエーハの加工方法
US9786643B2 (en) * 2014-07-08 2017-10-10 Micron Technology, Inc. Semiconductor devices comprising protected side surfaces and related methods
DE102018200656A1 (de) * 2018-01-16 2019-07-18 Disco Corporation Verfahren zum Bearbeiten eines Wafers
DE102018202254A1 (de) * 2018-02-14 2019-08-14 Disco Corporation Verfahren zum Bearbeiten eines Wafers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191296A (ja) 2003-12-25 2005-07-14 Jsr Corp バックグラインドテープ及び半導体ウェハの研磨方法
JP2010027685A (ja) 2008-07-15 2010-02-04 Lintec Corp 半導体ウエハの研削方法
JP2013243224A (ja) 2012-05-18 2013-12-05 Disco Abrasive Syst Ltd 保護部材の貼着方法
DE102015216619A1 (de) 2015-08-31 2017-03-02 Disco Corporation Verfahren zum Bearbeiten eines Wafers
WO2017036512A1 (en) 2015-08-31 2017-03-09 Karl Heinz Priewasser Method of processing wafer and protective sheeting for use in this method

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
http://www.brewerscience.com/product-categories/wafer-levelpackaging/
http://www.musashi-engineering.co.jp.e.cn.hp.transer.com/products/

Also Published As

Publication number Publication date
KR102105114B1 (ko) 2020-04-27
DE102017208405A1 (de) 2018-11-22
TWI683392B (zh) 2020-01-21
US20180337141A1 (en) 2018-11-22
JP2018195805A (ja) 2018-12-06
JP2020113778A (ja) 2020-07-27
SG10201803494SA (en) 2018-12-28
US20210151390A1 (en) 2021-05-20
US11637074B2 (en) 2023-04-25
KR20180127230A (ko) 2018-11-28
CN108933098A (zh) 2018-12-04
CN108933098B (zh) 2024-12-24
JP2019169727A (ja) 2019-10-03
TW201909333A (zh) 2019-03-01
US11784138B2 (en) 2023-10-10
JP6740542B2 (ja) 2020-08-19
JP6888218B2 (ja) 2021-06-16

Similar Documents

Publication Publication Date Title
DE102017208405B4 (de) Verfahren zum Bearbeiten eines Wafers und Schutzfolie
DE112015006857B4 (de) Verfahren zum Bearbeiten eines Wafers und Schutzabdeckung zur Verwendung in diesem Verfahren
DE102015216619B4 (de) Verfahren zum Bearbeiten eines Wafers
DE102018202254A1 (de) Verfahren zum Bearbeiten eines Wafers
DE102018200656A1 (de) Verfahren zum Bearbeiten eines Wafers
DE112017003219B4 (de) Verfahren zum Bearbeiten eines Wafers
DE102018214337A1 (de) Verfahren zum Bearbeiten eines Substrats
DE112017007552T5 (de) Schutzabdeckung für eine Verwendung bei einer Bearbeitung eines Wafers, Handhabungssystem für einen Wafer und eine Kombination aus einem Wafer und einer Schutzabdeckung
DE102015002542B4 (de) Waferteilungsverfahren
DE102013219271B4 (de) Schutzelement und Waferbearbeitungsverfahren
DE102019201438B4 (de) Verfahren zum Herstellen eines Substrats und System zum Herstellen eines Substrats
DE102015204698A1 (de) Verfahren zum Teilen eines Wafers
DE102019211540A1 (de) Verfahren zum bearbeiten eines substrats
DE102018217434B4 (de) Werkstückschleifverfahren
DE102021203911A1 (de) Verfahren zum bearbeiten eines substrats und ein system zum bearbeiten eines substrats
DE102020210104B4 (de) Verfahren zum bearbeiten eines substrats
DE102022205175B4 (de) Wafer-bearbeitungsverfahren
DE102021209979A1 (de) Verfahren zur bearbeitung eines substrats
DE102023208767A1 (de) Werkstückunterstützung

Legal Events

Date Code Title Description
R012 Request for examination validly filed
R016 Response to examination communication
R016 Response to examination communication
R018 Grant decision by examination section/examining division
R020 Patent grant now final
R079 Amendment of ipc main class

Free format text: PREVIOUS MAIN CLASS: H01L0021304000

Ipc: H10P0054300000